Tantalum Hot-Electron Bolometers for Low-Noise Heterodyne Receivers

Anders J. Skalare, William R. McGrath, Bruce Bumble, Henry George LeDuc

Published Mar 26, 2002• 1 citation

Abstract

We describe superconducting diffusion-cooled hot-electron bolometers that were fabricated fromtantalum films grown on a thin niobium seed layer. The seed layer promotes single-phase growth of the Ta films, resulting in high-quality bolometers with transition temperatures up to 2.35 K and transition widths of less than 0.2 K. An S-parameter measurement set-up in a He-3 cryostat was used to measure device impedance versus frequency of a 400 nm long device at a temperature of 400 mK. It is shown that a 3 dB roll-off frequency of about 1 GHz can be achieved when the device resistance matches the impedance of the embedding network (no electrothermal feedback). This would lead to a prediction of 16 GHz for a 100 nm device, and indicates that a heterodyne mixer using a Ta HEB should be able to operate at several GHz even with a significant amount of electrothermal feedback.

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