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A Tunerless SIS Mixer for 200-280 GHz with Low Output Capacitance and Inductance

Anthony R. Kerr, S.-K. Pan, A. W. Lichtenberger, Hua Huang

Published Mar 1, 1998• 20 citations
OpenAlex

Abstract

The introduction by Padin et al. in 1996 of an SIS mixer with an integrated IF amplifier eliminates the need for an IF isolator and makes possible SIS receivers with multi-octave IF's. To realize a wide IF bandwidth, an SIS mixer must be designed with low IF capacitance and inductance. This paper describes an SIS mixer in which the RF circuit is effectively decoupled from the IF circuit, and a compact high-impedance RF choke circuit is used, resulting in low output capacitance and inductance.

Related papers

A 220 GHz finline mixer with ultra-wide instantaneous bandwidth

BK Tan, Faouzi M. Boussaha, Christine Chaumont +1 more

We describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral finline taper and a slotline-to-microstrip transition. We used a double-stub tuning network to tune out the junction’s parasitic capacitance at a broad RF bandwidth, and matched the output impedance of the mixer to the input impedance of the IF amplifier (50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer. We have fabricated these devices and have measured good DC current-voltage (IV) characteristic curves. The heterodyne mixing performance of these devices is currently being measured, and we expect to present the results in the forthcoming ISSTT conference in March.

ORA review team•Jan 1, 2015•7 citations

A 230 GHz Finline SIS receiver with wide IF bandwidth

John Garrett, Faouzi M. Boussaha, Christine Chaumont +2 more

We have developed anSIS receiver with a wide intermediate-frequency (IF) bandwidth.This is important for reducing image integration time and simultaneously measuring multiple spectral lines. The receiver is a finline mixer-based design, which allows for ultra-wide radio-frequency (RF) bandwidth and has lower mechanical requirements compared to radial stub designs. Simulations of this receiver showed quantum limited noise in the RF frequency range of 140 to 260 GHzand from DC to 10GHz in the IF spectrum.We measured the noise temperature by comparing the receiver's response to hot and cold loads. The best noise temperature was 37.9 K at 231.0 GHz, and all of the results were below 100 K from 213 to 257 GHz (the bandwidth of our local-oscillator). We measured the IF bandwidth using a spectrum analyser, and found good results from around 3-10 GHz. The lower frequency was restricted by our IF amplifier's bandwidth but the higher frequency limit was lower than we expected from simulations. We believe that this discrepancywas due to the inductance of the bondwires that we used to connect the mixer chip to the IF board. We are currently investigating techniques to reduce and compensate for this inductance.

•Jan 1, 2017•1 citation

Wide If 230-GHz Superconductor-Insulator-Superconductor Mixer

Naeun Shin, Jung‐Won Lee, Ming-Jye Wang

A 230 GHz Superconductor-Insulator-Superconductor (SIS) mixer is designed focusing on a good performance in the IF frequency range of 4–16 GHz over the RF band from 211 to 275 GHz. A transition from a full-height waveguide to a probe is designed using HFSS. The mixer chips containing SIS junctions are designed and optimized to have low total capacitance of circuits to ensure wide IF bandwidth. The chip fabrication was done in Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), where the masks were conducted by TSMC. A lab test was conducted on a superconducting mixer with a cryogenic dewar. The gap voltage in the I-V curve of the mixer is approximately 8 mV, and there is a clear nonlinearity around a current of 110 μA, which matches well with the simulation. The receiver noise temperature is approximately 60 K including optical losses and the noise from the RF input.

International Conference on Information and Communication Technology Convergence (ICTC)•Oct 16, 2024•1 citation

Ultra-Wide Intermediate Bandwidth for High-Frequency SIS Mixers

Boon-Kok Tan, G. Yassin, Paul Grimes

We present a simple method for widening the Intermediate frequency (IF) bandwidth of high frequency superconductor-insulator-superconductor (SIS) mixers. The method only requires a mixer with a single ~1 μ m2tunnel junction and an IF transformer fabricated with standard printed circuit board technology, avoiding the complexity of requiring several very small tunnel junctions in series or the use of on-chip IF tuning circuits. The method is based on employing a multi-stage microstrip IF transformer to transform the dynamic impedance of the SIS mixer chip to 50 Ω output over a wide IF bandwidth. This method assumes moderately high capacitance junction (75 fF/μm2), and is particularly useful for high frequency SIS mixers. In this paper, we shall first describe the design methodology of the IF transformer using an existing 650 GHz SIS mixer chip design as an illustration and then present the measured IF performance of the mixer.

IEEE Transactions on Terahertz Science and Technology•Jan 31, 2014•11 citations

A millimeter unilateral finline SIS mixer with a wide IF bandwidth

Yangjun Zhou

Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.

•Jan 1, 2013•0 citations

Analyzing and improving the IF bandwidth performance for 345 GHz SIS mixer

Chen Peng, Boxun Wang, Liping Zuo +5 more

Abstract The wide intermediate frequency (IF) bandwidth is a core performance metric for terahertz heterodyne receivers, and a wide-IF superconductor–insulator–superconductor (SIS) mixer is key to achieving this. This paper presents the simulation-based design, optimization, and performance analysis of a 345 GHz superconducting SIS mixer developed for wide-IF applications. The mixer employs a parallel-connected twin-junction tuning structure and integrates a dedicated IF impedance matching circuit, achieving wideband impedance matching between the mixer output port and low-noise amplifier. The design is based on two tunnel junction technologies, AlO x and AlN, with critical current densities of 1 kA·cm −2 and 25 kA·cm −2 , respectively. We systematically studied the effects of different junction materials and junction areas on the RF and IF bandwidth performance of the SIS mixer. It is found that for AlN-barrier junctions with diameters of 0.6 μ m and 0.8 μ m, the receiver’s IF noise temperature slowly decreased as the IF frequency increased at a high local oscillator frequency. Furthermore, we incorporated the calculated IF output port impedance into the mixer model for correction and introduced an integrated IF circuit approach, overcoming the original IF bandwidth limitation. Simulations show that the newly designed mixer achieves the stringent sensitivity and bandwidth requirements across the 320–370 GHz range, delivering an IF bandwidth of 4–22 GHz and a receiver noise temperature of 39–73 K. Notably, the −3 dB IF bandwidth is improved by more than 1.5 times compared to conventional AlO x -based designs. These findings provide new design guidelines and quantitative criteria for next-generation wide-IF receivers and other high-frequency applications requiring a wide IF bandwidth.

Journal of Physics D Applied Physics•Oct 6, 2026•0 citations
The introduction by Padin et al. in 1996 of an SIS mixer with an integrated IF amplifier eliminates the need for an IF isolator and makes possible SIS receivers with multi-octave IF's. To realize a wide IF bandwidth, an SIS mixer must be designed with low IF capacitance and inductance. This paper describes an SIS mixer in which the RF circuit is effectively decoupled from the IF circuit, and a compact high-impedance RF choke circuit is used, resulting in low output capacitance and inductance.
We describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral finline taper and a slotline-to-microstrip transition. We used a double-stub tuning network to tune out the junction’s parasitic capacitance at a broad RF bandwidth, and matched the output impedance of the mixer to the input impedance of the IF amplifier (50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer. We have fabricated these devices and have measured good DC current-voltage (IV) characteristic curves. The heterodyne mixing performance of these devices is currently being measured, and we expect to present the results in the forthcoming ISSTT conference in March.
We have developed anSIS receiver with a wide intermediate-frequency (IF) bandwidth.This is important for reducing image integration time and simultaneously measuring multiple spectral lines. The receiver is a finline mixer-based design, which allows for ultra-wide radio-frequency (RF) bandwidth and has lower mechanical requirements compared to radial stub designs. Simulations of this receiver showed quantum limited noise in the RF frequency range of 140 to 260 GHzand from DC to 10GHz in the IF spectrum.We measured the noise temperature by comparing the receiver's response to hot and cold loads. The best noise temperature was 37.9 K at 231.0 GHz, and all of the results were below 100 K from 213 to 257 GHz (the bandwidth of our local-oscillator). We measured the IF bandwidth using a spectrum analyser, and found good results from around 3-10 GHz. The lower frequency was restricted by our IF amplifier's bandwidth but the higher frequency limit was lower than we expected from simulations. We believe that this discrepancywas due to the inductance of the bondwires that we used to connect the mixer chip to the IF board. We are currently investigating techniques to reduce and compensate for this inductance.
A 230 GHz Superconductor-Insulator-Superconductor (SIS) mixer is designed focusing on a good performance in the IF frequency range of 4–16 GHz over the RF band from 211 to 275 GHz. A transition from a full-height waveguide to a probe is designed using HFSS. The mixer chips containing SIS junctions are designed and optimized to have low total capacitance of circuits to ensure wide IF bandwidth. The chip fabrication was done in Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), where the masks were conducted by TSMC. A lab test was conducted on a superconducting mixer with a cryogenic dewar. The gap voltage in the I-V curve of the mixer is approximately 8 mV, and there is a clear nonlinearity around a current of 110 μA, which matches well with the simulation. The receiver noise temperature is approximately 60 K including optical losses and the noise from the RF input.
We present a simple method for widening the Intermediate frequency (IF) bandwidth of high frequency superconductor-insulator-superconductor (SIS) mixers. The method only requires a mixer with a single ~1 μ m2tunnel junction and an IF transformer fabricated with standard printed circuit board technology, avoiding the complexity of requiring several very small tunnel junctions in series or the use of on-chip IF tuning circuits. The method is based on employing a multi-stage microstrip IF transformer to transform the dynamic impedance of the SIS mixer chip to 50 Ω output over a wide IF bandwidth. This method assumes moderately high capacitance junction (75 fF/μm2), and is particularly useful for high frequency SIS mixers. In this paper, we shall first describe the design methodology of the IF transformer using an existing 650 GHz SIS mixer chip design as an illustration and then present the measured IF performance of the mixer.
Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.
Abstract The wide intermediate frequency (IF) bandwidth is a core performance metric for terahertz heterodyne receivers, and a wide-IF superconductor–insulator–superconductor (SIS) mixer is key to achieving this. This paper presents the simulation-based design, optimization, and performance analysis of a 345 GHz superconducting SIS mixer developed for wide-IF applications. The mixer employs a parallel-connected twin-junction tuning structure and integrates a dedicated IF impedance matching circuit, achieving wideband impedance matching between the mixer output port and low-noise amplifier. The design is based on two tunnel junction technologies, AlO x and AlN, with critical current densities of 1 kA·cm −2 and 25 kA·cm −2 , respectively. We systematically studied the effects of different junction materials and junction areas on the RF and IF bandwidth performance of the SIS mixer. It is found that for AlN-barrier junctions with diameters of 0.6 μ m and 0.8 μ m, the receiver’s IF noise temperature slowly decreased as the IF frequency increased at a high local oscillator frequency. Furthermore, we incorporated the calculated IF output port impedance into the mixer model for correction and introduced an integrated IF circuit approach, overcoming the original IF bandwidth limitation. Simulations show that the newly designed mixer achieves the stringent sensitivity and bandwidth requirements across the 320–370 GHz range, delivering an IF bandwidth of 4–22 GHz and a receiver noise temperature of 39–73 K. Notably, the −3 dB IF bandwidth is improved by more than 1.5 times compared to conventional AlO x -based designs. These findings provide new design guidelines and quantitative criteria for next-generation wide-IF receivers and other high-frequency applications requiring a wide IF bandwidth.