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Journal of Physics D Applied Physics

Analyzing and improving the IF bandwidth performance for 345 GHz SIS mixer

Chen Peng, Boxun Wang, Liping Zuo, Linjie Zhang, Runze Jing, 何晓勇, Fangting Lin, Duo Cao

Published Oct 6, 2026• 0 citations
Publisher

Abstract

Abstract The wide intermediate frequency (IF) bandwidth is a core performance metric for terahertz heterodyne receivers, and a wide-IF superconductor–insulator–superconductor (SIS) mixer is key to achieving this. This paper presents the simulation-based design, optimization, and performance analysis of a 345 GHz superconducting SIS mixer developed for wide-IF applications. The mixer employs a parallel-connected twin-junction tuning structure and integrates a dedicated IF impedance matching circuit, achieving wideband impedance matching between the mixer output port and low-noise amplifier. The design is based on two tunnel junction technologies, AlO x and AlN, with critical current densities of 1 kA·cm −2 and 25 kA·cm −2 , respectively. We systematically studied the effects of different junction materials and junction areas on the RF and IF bandwidth performance of the SIS mixer. It is found that for AlN-barrier junctions with diameters of 0.6 μ m and 0.8 μ m, the receiver’s IF noise temperature slowly decreased as the IF frequency increased at a high local oscillator frequency. Furthermore, we incorporated the calculated IF output port impedance into the mixer model for correction and introduced an integrated IF circuit approach, overcoming the original IF bandwidth limitation. Simulations show that the newly designed mixer achieves the stringent sensitivity and bandwidth requirements across the 320–370 GHz range, delivering an IF bandwidth of 4–22 GHz and a receiver noise temperature of 39–73 K. Notably, the −3 dB IF bandwidth is improved by more than 1.5 times compared to conventional AlO x -based designs. These findings provide new design guidelines and quantitative criteria for next-generation wide-IF receivers and other high-frequency applications requiring a wide IF bandwidth.

DOI
10.1088/1361-6463/aeb0b6

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Abstract The wide intermediate frequency (IF) bandwidth is a core performance metric for terahertz heterodyne receivers, and a wide-IF superconductor–insulator–superconductor (SIS) mixer is key to achieving this. This paper presents the simulation-based design, optimization, and performance analysis of a 345 GHz superconducting SIS mixer developed for wide-IF applications. The mixer employs a parallel-connected twin-junction tuning structure and integrates a dedicated IF impedance matching circuit, achieving wideband impedance matching between the mixer output port and low-noise amplifier. The design is based on two tunnel junction technologies, AlO x and AlN, with critical current densities of 1 kA·cm −2 and 25 kA·cm −2 , respectively. We systematically studied the effects of different junction materials and junction areas on the RF and IF bandwidth performance of the SIS mixer. It is found that for AlN-barrier junctions with diameters of 0.6 μ m and 0.8 μ m, the receiver’s IF noise temperature slowly decreased as the IF frequency increased at a high local oscillator frequency. Furthermore, we incorporated the calculated IF output port impedance into the mixer model for correction and introduced an integrated IF circuit approach, overcoming the original IF bandwidth limitation. Simulations show that the newly designed mixer achieves the stringent sensitivity and bandwidth requirements across the 320–370 GHz range, delivering an IF bandwidth of 4–22 GHz and a receiver noise temperature of 39–73 K. Notably, the −3 dB IF bandwidth is improved by more than 1.5 times compared to conventional AlO x -based designs. These findings provide new design guidelines and quantitative criteria for next-generation wide-IF receivers and other high-frequency applications requiring a wide IF bandwidth.
This paper reports the simulation, performance, and detailed characterization of a low-noise heterodyne module with very wide intermediate frequency (IF) bandwidth in the 385-500-GHz radio frequency (RF) range. The module integrates a superconductor-insulator-superconductor (SIS) mixer with a 3- 21-GHz cryogenic low-noise preamplifier (CLNA). The utilization of high current density SIS junctions offers wide RF bandwidth and facilitates better matching between SIS junctions and the CLNA. Based on an equivalent circuit of the SIS mixer chip, we calculate the IF output impedance and simulate how different matching conditions affect the performance of the CLNA. Simulations predict that low-noise module performance can be obtained over a 3-18GHz IF range, limited mainly by parasitic elements in theSIS mixer chip. The measurement results of the heterodyne module demonstrate flat gain and a typical noise temperature of 70-80 K over the 3-18-GHz IF range, at local oscillator frequencies of 400-480 GHz. Mixer chip output impedance and CLNA input impedance have been directly measured by recording S-parameters at cryogenic temperatures. The results enabled us to quantify the contribution of various parasitic elements in the mixer IF circuitry. Calculations based on our model are in good agreement with measurements.
Abstract The Atacama Large Millimetre/Sub-millimetre Array (ALMA) wideband sensitivity upgrade (WSU) project marks the next milestone in the development of millimetre (mm) and sub-mm astronomy. In this paper, we present the design, optimisation, and performance analysis of the ALMA Band-9 superconductor-insulator-superconductor (SIS) mixer for applications in the upcoming WSU programme, and other high-frequency astronomical observations. The mixers feature a niobium radial-rectangular probe antenna integrated with a silicon-on-insulator (SOI) substrate, which ensures minimal RF power leakage and optimised power coupling. We base our mixer design on conventional aluminium oxide (AlO x ) tunnel junction technology, with a critical current density of about 10 kA cm−2. We explore the impact of different junction sizes on the radio frequency (RF) and intermediate frequency (IF) bandwidths. We demonstrate that the new mixer design is capable of meeting the more stringent sensitivity-bandwidth requirements of the ALMA-WSU programme over the original Band-9 frequency range (602–720 GHz), as the IF bandwidth performance reaches up to 20 GHz. The IF bandwidth improvement is approximately double that of the current existing ALMA Band-9 mixers. These results suggest that our mixer designs provide a promising solution for future ALMA upgrades and other high-frequency applications requiring broad RF and IF bandwidth.
Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.
We present a simple method for widening the Intermediate frequency (IF) bandwidth of high frequency superconductor-insulator-superconductor (SIS) mixers. The method only requires a mixer with a single ~1 μ m2tunnel junction and an IF transformer fabricated with standard printed circuit board technology, avoiding the complexity of requiring several very small tunnel junctions in series or the use of on-chip IF tuning circuits. The method is based on employing a multi-stage microstrip IF transformer to transform the dynamic impedance of the SIS mixer chip to 50 Ω output over a wide IF bandwidth. This method assumes moderately high capacitance junction (75 fF/μm2), and is particularly useful for high frequency SIS mixers. In this paper, we shall first describe the design methodology of the IF transformer using an existing 650 GHz SIS mixer chip design as an illustration and then present the measured IF performance of the mixer.
We present the design and the performance of a fixed-tuned, all niobium (Nb) Superconductor-Insulator-Superconductor (SIS) mixer covering RF frequencies from 163 to 211 GHz with 4-8 GHz IF bandwidth. The mixer uses two Nb/Al-AlOx/Nb junctions of size 3 μm2each with theRnAproduct of 30 Ω·μm2, in a twin junction configuration. An local oscillator (LO) directional coupler made of superconducting lines with slots in the ground plane is integrated on the SIS mixer chip. The isolated port of the LO coupler is terminated using a wide-band resistive load with a sheet resistance of 12 Ω/□. The SIS tuning circuitry is optimized to achieve best power match between the twin junctions and the embedding circuitry. The measurement of the double sideband mixer noise at 171 GHz shows that the receiver noise temperature is approximately 17 K, which is just 2hf/k. The estimated noise contribution from the RF loss and the IF chain at 176 GHz LO frequency is 8 K and 7.5 K respectively, resulting in a SIS mixer noise ofhf/2k. The mixer noise performance across the entire RF band varies between 19 to 25 K. This is to our knowledge the best reported noise temperature at these frequencies till now.
Series distributed superconductor-insulator-superconductor mixers have been used to provide very wide instantaneous bandwidth of operation. In this paper, we explore a design based on a 3-junction array in which the junctions themselves form part of the RF tuning network of the mixer. We have developed mixers based on these designs for use in the 200 and 300 GHz bands. Receivers incorporating these wideband mixers demonstrate very low noise temperature. At a local oscillator frequency of 300 GHz, the lowest measured intermediate frequency noise temperature is about 42 K and the usable intermediate frequency bandwidth extends from 6 to 16.5 GHz. Both the design theory and experimental results are presented.