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A 220 GHz finline mixer with ultra-wide instantaneous bandwidth

BK Tan, Faouzi M. Boussaha, Christine Chaumont, G. Yassin

Published Jan 1, 2015• 7 citations
OpenAlex

Abstract

We describe the design and fabrication of a 220 GHz superconductor-insulator-superconductor (SIS) mixer with ultrawide IF bandwidth. The mixer is fabricated on a 100 µm thick quartz substrate, with planar circuit on-chip integration. The RF power is coupled to the tunnel junction via a unilateral finline taper and a slotline-to-microstrip transition. We used a double-stub tuning network to tune out the junction’s parasitic capacitance at a broad RF bandwidth, and matched the output impedance of the mixer to the input impedance of the IF amplifier (50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer. We have fabricated these devices and have measured good DC current-voltage (IV) characteristic curves. The heterodyne mixing performance of these devices is currently being measured, and we expect to present the results in the forthcoming ISSTT conference in March.

Related papers

A millimeter unilateral finline SIS mixer with a wide IF bandwidth

Yangjun Zhou

Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.

•Jan 1, 2013•0 citations

A 350-GHz SIS antipodal finline mixer

G. Yassin, S. Withington, M. Buffey +2 more

In this paper, we describe the design and operation of a 350-GHz finline superconductor-insulator-superconductor mixer. The mixer is fed by a horn-reflector antenna, and the superconducting circuit is fabricated using planar-circuit technology and fully integrated tuning. An important feature of the mixer is that it employs an antipodal finline section, deposited on one side of a quartz substrate, which transforms the high impedance of the waveguide (/spl ap/300 /spl Omega/) to the low impedance of the microstrip (/spl ap/20 /spl Omega/). The Nb/Al-oxide/Nb tunnel junction is fabricated at the same time as the finline circuit. In this paper, we describe the design procedure in some detail. We pay particular attention to the synthesis of the finline taper and the electromagnetic design of the horn-reflector antenna. We have tested a finline mixer over the frequency range of 330-370 GHz and measured a receiver noise temperature of 90 K, which remained unchanged over the whole frequency range. Our investigation has demonstrated that it is possible to make superconducting finline mixers for frequencies as high as 350 GHz.

IEEE Transactions on Microwave Theory and Techniques•Apr 1, 2000•32 citations

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Boon-Kok Tan, G. Yassin, Paul Grimes

We present a simple method for widening the Intermediate frequency (IF) bandwidth of high frequency superconductor-insulator-superconductor (SIS) mixers. The method only requires a mixer with a single ~1 μ m2tunnel junction and an IF transformer fabricated with standard printed circuit board technology, avoiding the complexity of requiring several very small tunnel junctions in series or the use of on-chip IF tuning circuits. The method is based on employing a multi-stage microstrip IF transformer to transform the dynamic impedance of the SIS mixer chip to 50 Ω output over a wide IF bandwidth. This method assumes moderately high capacitance junction (75 fF/μm2), and is particularly useful for high frequency SIS mixers. In this paper, we shall first describe the design methodology of the IF transformer using an existing 650 GHz SIS mixer chip design as an illustration and then present the measured IF performance of the mixer.

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A 230 GHz Superconductor-Insulator-Superconductor (SIS) mixer is designed focusing on a good performance in the IF frequency range of 4–16 GHz over the RF band from 211 to 275 GHz. A transition from a full-height waveguide to a probe is designed using HFSS. The mixer chips containing SIS junctions are designed and optimized to have low total capacitance of circuits to ensure wide IF bandwidth. The chip fabrication was done in Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), where the masks were conducted by TSMC. A lab test was conducted on a superconducting mixer with a cryogenic dewar. The gap voltage in the I-V curve of the mixer is approximately 8 mV, and there is a clear nonlinearity around a current of 110 μA, which matches well with the simulation. The receiver noise temperature is approximately 60 K including optical losses and the noise from the RF input.

International Conference on Information and Communication Technology Convergence (ICTC)•Oct 16, 2024•1 citation

100 GHz SIS mixer with improved RF matching

J.A. Carpenter, Andrew D. Smith, E.R. Arambula +3 more

A novel superconductor-insulator-superconductor (SIS) mixer coupling scheme with an integrated millimeter-wave transformer has been designed and tested. The impedance transformation allows larger junction sizes and easier fabrication than is possible with single junction or array mixers. Experiments with the front-end transformer mixers demonstrated mixer gains up to 10 dB and instantaneous bandwidths of 700 MHz at W-band. In addition to heterodyne mixing, direct detection measurements were made to measure instantaneous signal bandwidth. Current responsivities of 1000 A/W were measured with a 3-dB bandwidth of 8 GHz. The direct detection performance falls to within experimental uncertainty at the quantum limit of one-electron-per-photon.

IEEE Transactions on Magnetics•Mar 1, 1991•12 citations

Development of an SIS(Superconductor-Insulator-Superconductor) Junction Mixer over 120∼180 GHz Band

Moon‐Hee Chung, Changhoon Lee, Kwang-Dong Kim +1 more

A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-AlO/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.

The Journal of Korean Institute of Electromagnetic Engineering and Science•Jan 1, 2004•0 citations
We describe the design and fabrication of a 220 GHz
superconductor-insulator-superconductor (SIS) mixer with ultrawide
IF bandwidth. The mixer is fabricated on a 100 µm thick
quartz substrate, with planar circuit on-chip integration. The
RF power is coupled to the tunnel junction via a unilateral
finline taper and a slotline-to-microstrip transition. We used a
double-stub tuning network to tune out the junction’s parasitic
capacitance at a broad RF bandwidth, and matched the output
impedance of the mixer to the input impedance of the IF amplifier
(50 Ω) from 4–18 GHz using a 6-stage IF impedance-transformer.
We have fabricated these devices and have measured good DC
current-voltage (IV) characteristic curves. The heterodyne mixing
performance of these devices is currently being measured, and we
expect to present the results in the forthcoming ISSTT conference
in March.
Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.
In this paper, we describe the design and operation of a 350-GHz finline superconductor-insulator-superconductor mixer. The mixer is fed by a horn-reflector antenna, and the superconducting circuit is fabricated using planar-circuit technology and fully integrated tuning. An important feature of the mixer is that it employs an antipodal finline section, deposited on one side of a quartz substrate, which transforms the high impedance of the waveguide (/spl ap/300 /spl Omega/) to the low impedance of the microstrip (/spl ap/20 /spl Omega/). The Nb/Al-oxide/Nb tunnel junction is fabricated at the same time as the finline circuit. In this paper, we describe the design procedure in some detail. We pay particular attention to the synthesis of the finline taper and the electromagnetic design of the horn-reflector antenna. We have tested a finline mixer over the frequency range of 330-370 GHz and measured a receiver noise temperature of 90 K, which remained unchanged over the whole frequency range. Our investigation has demonstrated that it is possible to make superconducting finline mixers for frequencies as high as 350 GHz.
We present a simple method for widening the Intermediate frequency (IF) bandwidth of high frequency superconductor-insulator-superconductor (SIS) mixers. The method only requires a mixer with a single ~1 μ m2tunnel junction and an IF transformer fabricated with standard printed circuit board technology, avoiding the complexity of requiring several very small tunnel junctions in series or the use of on-chip IF tuning circuits. The method is based on employing a multi-stage microstrip IF transformer to transform the dynamic impedance of the SIS mixer chip to 50 Ω output over a wide IF bandwidth. This method assumes moderately high capacitance junction (75 fF/μm2), and is particularly useful for high frequency SIS mixers. In this paper, we shall first describe the design methodology of the IF transformer using an existing 650 GHz SIS mixer chip design as an illustration and then present the measured IF performance of the mixer.
A 230 GHz Superconductor-Insulator-Superconductor (SIS) mixer is designed focusing on a good performance in the IF frequency range of 4–16 GHz over the RF band from 211 to 275 GHz. A transition from a full-height waveguide to a probe is designed using HFSS. The mixer chips containing SIS junctions are designed and optimized to have low total capacitance of circuits to ensure wide IF bandwidth. The chip fabrication was done in Academia Sinica Institute of Astronomy and Astrophysics (ASIAA), where the masks were conducted by TSMC. A lab test was conducted on a superconducting mixer with a cryogenic dewar. The gap voltage in the I-V curve of the mixer is approximately 8 mV, and there is a clear nonlinearity around a current of 110 μA, which matches well with the simulation. The receiver noise temperature is approximately 60 K including optical losses and the noise from the RF input.
A novel superconductor-insulator-superconductor (SIS) mixer coupling scheme with an integrated millimeter-wave transformer has been designed and tested. The impedance transformation allows larger junction sizes and easier fabrication than is possible with single junction or array mixers. Experiments with the front-end transformer mixers demonstrated mixer gains up to 10 dB and instantaneous bandwidths of 700 MHz at W-band. In addition to heterodyne mixing, direct detection measurements were made to measure instantaneous signal bandwidth. Current responsivities of 1000 A/W were measured with a 3-dB bandwidth of 8 GHz. The direct detection performance falls to within experimental uncertainty at the quantum limit of one-electron-per-photon.
A fixed-tuned SIS(Superconductor-Insulator-Superconductor) mixer across 120∼180 GHz band has been developed. This mixer employs an SIS chip fabricated by Nobeyama radio observatory which consists of a series array of 6 Nb/Al-AlO/Nb junctions in a microstrip line on a fused quartz substrate. The SIS chip is placed at the center of the half-height waveguide mixer mount to have a good incoming signal coupling over the whole frequency band. No mechanical tuner was used in the SIS mixer and the RF signal and local oscillator power are injected to the mixer via a cooled cross-guide coupler. In order to prevent the IF signal loss, the If output impedance of the SIS mixer was matched to the 50 input impedance of the IF chain. Measured double sideband noise temperatures of a receiver using the SIS mixer are 32∼131 K over 120∼180 GHz band. The developed SIS mixer is now in use for radio astronomical observations on the TRAO 14 m radio telescope.