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arXiv:2603.11188 · PRX Quantum

Rhenium as a material platform for long-lived transmon qubits

Yanhao Wang, Suhas Ganjam, Ishan Narra, Luigi Frunzio, Robert J. Schoelkopf

quant-phSubmitted Mar 11, 2026• Announced Mar 13, 2026• 0 citations
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Abstract

Dielectric loss at the interfaces of superconducting films has long been recognized as limiting the performance of state-of-the-art superconducting circuits. Notably, the presence of a native oxide layer on the film is hypothesized to contribute to dielectric loss at the metal-air interface. Here, we explore rhenium as a candidate for the film, motivated by its remarkable property to suppress native oxide formation. We demonstrate rhenium on sapphire as a promising material platform for superconducting circuits through the realization of transmons with mean relaxation times $T_1$ up to 407 microseconds at 5 GHz. Our transmons are supplemented with a loss characterization study, in which we separate the dominant loss mechanisms and construct a loss budget that agrees with our $T_1$ measurements. Further characterization may establish rhenium as a leading candidate for maximizing decoherence time.

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18 pages, 8 figures

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Dielectric loss at the interfaces of superconducting films has long been recognized as limiting the performance of state-of-the-art superconducting circuits. Notably, the presence of a native oxide layer on the film is hypothesized to contribute to dielectric loss at the metal-air interface. Here, we explore rhenium as a candidate for the film, motivated by its remarkable property to suppress native oxide formation. We demonstrate rhenium on sapphire as a promising material platform for superconducting circuits through the realization of transmons with mean relaxation times T1T_1T1​ up to 407 microseconds at 5 GHz. Our transmons are supplemented with a loss characterization study, in which we separate the dominant loss mechanisms and construct a loss budget that agrees with our T1T_1T1​ measurements. Further characterization may establish rhenium as a leading candidate for maximizing decoherence time.
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Dielectric losses at surfaces and interfaces remains a primary limitation to coherence in superconducting transmon qubits. Niobium (Nb), a widely used material in superconducting quantum circuits, readily forms native oxides under ambient conditions, leading to lossy dielectric interfaces that degrade device performance. Here, we demonstrate a novel fabrication strategy that chemically transforms the native dielectric oxide on Nb into a metallic Pt--Nb surface alloy through post-oxidation Pt deposition followed by thermal annealing, thereby stabilizing Nb surfaces against further oxidation, potentially including sidewall regions. High-purity Nb films were fabricated with bulk-like superconducting transition temperatures (Tc=9.30±0.10T_c = 9.30\pm0.10Tc​=9.30±0.10~K). Spectroscopic and microscopic analyses confirm the conversion of the native oxide into a chemically stable, metallic alloy-dominated layer that suppresses subsequent oxide growth. Ab initio simulations elucidate the atomic-scale rearrangement and electronic structure evolution associated with Pt incorporation into native niobium oxide, providing insight into the mechanism underlying the oxide-to-metal transformation and stabilization of the alloyed surface.
Niobium and aluminum have been widely used to realize superconducting resonators and qubits. However, the native oxide at the metal air interface limits the devices results. This layer is highly disordered, and it induces losses limiting the performances of the resonators or qubits. Recently, tantalum led to great improvement in qubit relaxation time. This improvement has been attributed to a thinner and less disordered oxide layer compared to Nb and Al. This study is aimed to limit the formation of the oxide layer, by the introduction of novel superconducting materials such as rhenium or by encapsulating the Nb surface with other superconducting materials such as Ta, Al, Re or other non-superconducting materials such as Au. To better understand the results, we are realizing these studies on coplanar waveguide resonators where the relation between surface losses and quality factor is clear. We are also analyzing different fabrication techniques to completely characterize our devices, linking material properties to the performances. In this work we are also varying the participation ratio of the devices in order to extract with higher fidelity and precision the losses introduced by the involved interfaces.
By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.
Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. It is recently shown that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS) is studied. The different oxidation states of tantalum that are present in the native oxide resulting from exposure to air are identified, and their distribution through the depth of the film is measured. Furthermore, it is shown how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. Correlating these measurements with detailed measurements of quantum devices may elucidate the underlying microscopic sources of loss.