By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.
By using the dry etching process of tantalum (Ta) film, we had obtained transmon qubit with the best lifetime (T1) 503 us, suggesting that the dry etching process can be adopted in the following multi-qubit fabrication with Ta film. We also compared the relaxation and coherence times of transmons made with different materials (Ta, Nb and Al) with the same design and fabrication processes of Josephson junction, we found that samples prepared with Ta film had the best performance, followed by those with Al film and Nb film. We inferred that the reason for this difference was due to the different loss of oxide materials located at the metal-air interface.
Abstract Here we report a breakthrough in the fabrication of a long lifetime transmon qubit. We use tantalum films as the base superconductor. By using a dry etching process, we obtained transmon qubits with a best T1 lifetime of 503 μs. As a comparison, we also fabricated transmon qubits with other popular materials, including niobium and aluminum, under the same design and fabrication processes. After characterizing their coherence properties, we found that qubits prepared with tantalum films have the best performance. Since the dry etching process is stable and highly anisotropic, it is much more suitable for fabricating complex scalable quantum circuits, when compared to wet etching. As a result, the current breakthrough indicates that the dry etching process of tantalum film is a promising approach to fabricate medium- or large-scale superconducting quantum circuits with a much longer lifetime, meeting the requirements for building practical quantum computers.
Materials improvements are a powerful approach to reducing loss and decoherence in superconducting qubits because such improvements can be readily translated to large scale processors. Recent work improved transmon coherence by utilizing tantalum (Ta) as a base layer and sapphire as a substrate. The losses in these devices are dominated by two-level systems (TLSs) with comparable contributions from both the surface and bulk dielectrics, indicating that both must be tackled to achieve major improvements in the state of the art. Here we show that replacing the substrate with high-resistivity silicon (Si) dramatically decreases the bulk substrate loss, enabling 2D transmons with time-averaged quality factors (Q) exceeding 1.5 x 10^7, reaching a maximum Q of 2.5 x 10^7, corresponding to a lifetime (T_1) of up to 1.68 ms. This low loss allows us to observe decoherence effects related to the Josephson junction, and we use improved, low-contamination junction deposition to achieve Hahn echo coherence times (T_2E) exceeding T_1. We achieve these material improvements without any modifications to the qubit architecture, allowing us to readily incorporate standard quantum control gates. We demonstrate single qubit gates with 99.994% fidelity. The Ta-on-Si platform comprises a simple material stack that can potentially be fabricated at wafer scale, and therefore can be readily translated to large-scale quantum processors.
Quantum computing is a very interesting field, due to the ability of quantum computers to solve many problems much faster than a classical computer. Superconducting qubits are electronic circuits composed of superconducting capacitors, inductors and Josephson junctions, which can implement a physical qubit. However they need improvements in their coherence time to create a viable quantum computing. In this work I study the effect on decoherence caused by two level systems in the native oxide that forms on the surface of qubit. To this end I fabricate 3D transmon qubits using materials grown my molecular beam epitaxy, to which a variety of different surface treatments had been applied. I began by fabricating qubits from niobium/aluminum oxide/niobium trilayers. To this end I developed a self-aligned process for fabricating sub-micron Josephson junctions. This process presented many challenges. During the development of this process, it became clear that niobium was an inferior material for fabricating qubits compared to aluminum. I then switched to making qubits from Aluminum. I began by studying the growth of aluminum on sapphire, and was able to achieve aluminum films with an RMS roughness of 0.2 nm by growing on c-plane sapphire that had been annealed in oxygen at 1100 °C and dipped in BOE. Next I fabricated 3D transmon qubits by adapting the standard shadowmask process for use with MBE. I fabricated qubits with a long in situ oxidation to fully passivate the surface before exposure to air. I also passivated the surface by means of growing co deposited aluminum oxide, and by grown aluminum nitride using a nitrogen plasma source. The coherence times of these qubits were compared to those a control sample that had been exposed to air immediately after growth. Overall it doesn’t appear that cladding the surface changes the coherence time much, however it is difficult to form conclusions with this small sample size. The coated samples appeared to have slightly longer coherence times than the untreated samples, with diffusive oxidation and coating with aluminum oxide providing the largest increase in T1 and diffusive oxidation providing the largest increase in T2.
Tantalum-based transmon qubits are a promising platform for building large-scale quantum processors. So far, these qubits have been made from tantalum films grown exclusively in the alpha phase (α-Ta). The beta phase of tantalum (\{beta}-Ta) readily nucleates at room temperature, making it attractive for scalable qubit fabrication. However, \{beta}-Ta is widely believed to be detrimental to qubit performance because it has a lower superconducting critical temperature than α-Ta. We challenge this prevailing belief by fabricating low-loss transmon qubits from \{beta}-Ta films on sapphire. Across 11 qubits, the mean time-averaged quality factor is (5.6 +/- 2.3) x 10^6, with the best qubit recording a time-averaged quality factor of (10.1 +/- 1.3) x 10^6. Resonator studies demonstrate that the dominant microwave loss channel is surface two-level systems, with the surface loss contribution for \{beta}-Ta being about twice that of α-Ta. \{beta}-Ta films exhibit significant kinetic inductance, consistent with an estimated magnetic penetration depth of (1.78 +/- 0.02) μm. This work establishes \{beta}-Ta on sapphire as a material platform for realizing low-loss transmon qubits and other superconducting devices such as compact resonators, kinetic inductance detectors, and quasiparticle traps.
Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T 1 relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T 1 relaxation times 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.
The superconducting transmon qubit is a leading platform for quantum computing and quantum science. Building large, useful quantum systems based on transmon qubits will require significant improvements in qubit relaxation and coherence times, which are orders of magnitude shorter than limits imposed by bulk properties of the constituent materials. This indicates that relaxation likely originates from uncontrolled surfaces, interfaces, and contaminants. Previous efforts to improve qubit lifetimes have focused primarily on designs that minimize contributions from surfaces. However, significant improvements in the lifetime of two-dimensional transmon qubits have remained elusive for several years. Here, we fabricate two-dimensional transmon qubits that have both lifetimes and coherence times with dynamical decoupling exceeding 0.3 milliseconds by replacing niobium with tantalum in the device. We have observed increased lifetimes for seventeen devices, indicating that these material improvements are robust, paving the way for higher gate fidelities in multi-qubit processors.