Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

arXiv:2304.13257 · npj Quantum Information

Systematic improvements in transmon qubit coherence enabled by niobium surface encapsulation

Mustafa Bal, Akshay A. Murthy, Shaojiang Zhu, Francesco Crisa, Xinyuan You, Ziwen Huang, Tanay Roy, Jaeyel Lee, D. M. T. van Zanten, Roman Pilipenko, Ivan Nekrashevich, Andrei Lunin, Daniel Bafia, Yu. V. Krasnikova, Cameron Kopas, Ella Lachman, Duncan Miller, J. Mutus, Matthew J. Reagor, Hilal Cansizoglu, Jayss Marshall, David P. Pappas, Kim Vu, Kameshwar K. Yadavalli, Jin‐Su Oh, Lin Zhou, Matthew Joseph Kramer, Florent Lecocq, Dominic P. Goronzy, Carlos G. Torres‐Castanedo, P. Graham Pritchard, Vinayak P. Dravid, James M. Rondinelli, Michael J. Bedzyk, Mark C. Hersam, John Francis Zasadzinski, Jens Koch, James A. Sauls, Alexander Romanenko, Anna Grassellino

Published Apr 26, 2024• 132 citations
arXivHTMLPDF

Abstract

Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T 1 relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T 1 relaxation times 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.

DOI
10.1038/s41534-024-00840-x

Related papers

Systematic Improvements in Transmon Qubit Coherence Enabled by Comprehensive Investigation of Defects and Inhomogeneities

Akshay A. Murthy

times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.

•Jun 23, 2023•0 citations

Improvements in Qubit Coherence through Niobium Surface Encapsulation

Akshay A. Murthy, Mustafa Bal, Shaojiang Zhu +4 more

times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.

•Jun 23, 2023•2 citations

Optimizing Superconducting Qubits: Insights into Oxides Microstructures

Jin‐Su Oh, Haotian Wu, Lin Zhou

Improving qubit lifetime is essential for fault-tolerant quantum computing. It is widely acknowledged that intricate processing techniques introduce defects at the interfaces and surfaces of superconducting quantum circuits, which can create sources of decoherence. Therefore, a precise understanding of how a material's structure contributes to decoherence is critical for enhancing the performance of superconducting qubits. This talk highlights our recent advancements in understanding surface oxides in resonators and ultrathin aluminum oxide barriers in Josephson junctions (JJs) using transmission electron microscopy and spectroscopy techniques [1-4]. The Superconducting Quantum Materials & Systems Center (SQMS) demonstrated that encapsulating niobium surfaces with a ∼10nm tantalum layer results in 2-5x longer T1​ than bare niobium [2]. Our collaborative investigation shows that this improvement is attributed to tantalum's less lossy surface oxide, which contains fewer sub-oxides than niobium oxide. Moreover, the amorphous Ta2O5 shows a bonding nature closer to crystalline form than amorphous Nb2O5, potentially reducing hydrogen diffusion toward the oxide/metal interface [1, 2]. Moreover, we will briefly discuss our preliminary study of the thin film structure under cryogenic conditions down to 20K, conducted using a liquid helium TEM holder in a Thermo Cs-corrected Titan. We also explored the effect of aluminum deposition rates on aluminum oxide microstructure and qubit lifetime. Although increasing the deposition rate from 0.5 Å/s to 5 Å/s significantly improved oxide layer roughness and thickness variation, the qubits’ coherence remained unchanged. This is likely due to Cooper pairs only tunneling through the thinnest parts of the barrier, making them less affected by the grain boundaries in the thin aluminum films. Additionally, we uncovered a stress-induced grain boundary sliding mechanism, which contributes to short-circuit failures in JJs [4]. Our discovery provides vital insight into oxide microstructure and superconducting qubits’ functionality [5].

Microscopy and Microanalysis•Jul 1, 2025•0 citations

Atomic-Scale Characterization and Electronic Properties of Gold-Capped Niobium Films for Superconducting Qubits

Junki Makita, Seth Rice, G. Berti +17 more

Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T 1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb–Au, ex situ Nb–Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual Nb x O y layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.

ACS Nano•Mar 4, 2026•1 citation

Study of the effects of surface cladding on 3D transmon

Zachary Yoscovits

Quantum computing is a very interesting field, due to the ability of quantum computers to solve many problems much faster than a classical computer. Superconducting qubits are electronic circuits composed of superconducting capacitors, inductors and Josephson junctions, which can implement a physical qubit. However they need improvements in their coherence time to create a viable quantum computing. In this work I study the effect on decoherence caused by two level systems in the native oxide that forms on the surface of qubit. To this end I fabricate 3D transmon qubits using materials grown my molecular beam epitaxy, to which a variety of different surface treatments had been applied. I began by fabricating qubits from niobium/aluminum oxide/niobium trilayers. To this end I developed a self-aligned process for fabricating sub-micron Josephson junctions. This process presented many challenges. During the development of this process, it became clear that niobium was an inferior material for fabricating qubits compared to aluminum. I then switched to making qubits from Aluminum. I began by studying the growth of aluminum on sapphire, and was able to achieve aluminum films with an RMS roughness of 0.2 nm by growing on c-plane sapphire that had been annealed in oxygen at 1100 °C and dipped in BOE. Next I fabricated 3D transmon qubits by adapting the standard shadowmask process for use with MBE. I fabricated qubits with a long in situ oxidation to fully passivate the surface before exposure to air. I also passivated the surface by means of growing co deposited aluminum oxide, and by grown aluminum nitride using a nitrogen plasma source. The coherence times of these qubits were compared to those a control sample that had been exposed to air immediately after growth. Overall it doesn’t appear that cladding the surface changes the coherence time much, however it is difficult to form conclusions with this small sample size. The coated samples appeared to have slightly longer coherence times than the untreated samples, with diffusive oxidation and coating with aluminum oxide providing the largest increase in T1 and diffusive oxidation providing the largest increase in T2.

•Sep 16, 2014•0 citations

Structure and Formation Mechanisms in Tantalum and Niobium Oxides in Superconducting Quantum Circuits

Jin‐Su Oh, Rahim Zaman, Akshay A. Murthy +15 more

High Resolution Image Download MS PowerPoint Slide Improving the qubit’s lifetime (T 1 ) is crucial for fault-tolerant quantum computing. Recent advancements have shown that replacing niobium (Nb) with tantalum (Ta) as the base metal significantly increases T 1, likely due to a less lossy native surface oxide. However, understanding the formation mechanism and nature of both surface oxides is still limited. Using aberration-corrected transmission electron microscopy and electron energy loss spectroscopy, we found that Ta surface oxide has fewer suboxides than Nb oxide. We observed an abrupt oxidation state transition from Ta 2 O 5 to Ta, as opposed to the gradual shift from Nb 2 O 5, NbO 2, and NbO to Nb, consistent with thermodynamic modeling. Additionally, amorphous Ta 2 O 5 exhibits a closer-to-crystalline bonding nature than Nb 2 O 5, potentially hindering H atomic diffusion toward the oxide/metal interface. Finally, we propose a loss mechanism arising from the transition between two states within the distorted octahedron in an amorphous structure, potentially causing two-level system loss. Our findings offer a deeper understanding of the differences between native amorphous Ta and Nb oxides, providing valuable insights for advancing superconducting qubits through surface oxide engineering.

ACS Nano•Jul 21, 2024•16 citations
Abstract We present a transmon qubit fabrication technique that yields systematic improvements in T 1 relaxation times. We encapsulate the surface of niobium and prevent the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface, this comparative investigation examining different capping materials, such as tantalum, aluminum, titanium nitride, and gold, as well as substrates across different qubit foundries demonstrates the detrimental impact that niobium oxides have on coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T 1 relaxation times 2–5 times longer than baseline qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 300 μs, with maximum values up to 600 μs. Our comparative structural and chemical analysis provides insight into why amorphous niobium oxides may induce higher losses compared to other amorphous oxides.
times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When capping niobium with tantalum, we obtain median qubit lifetimes above 200 microseconds. Our comparative structural and chemical analysis suggests that amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
Improving qubit lifetime is essential for fault-tolerant quantum computing. It is widely acknowledged that intricate processing techniques introduce defects at the interfaces and surfaces of superconducting quantum circuits, which can create sources of decoherence. Therefore, a precise understanding of how a material's structure contributes to decoherence is critical for enhancing the performance of superconducting qubits. This talk highlights our recent advancements in understanding surface oxides in resonators and ultrathin aluminum oxide barriers in Josephson junctions (JJs) using transmission electron microscopy and spectroscopy techniques [1-4]. The Superconducting Quantum Materials & Systems Center (SQMS) demonstrated that encapsulating niobium surfaces with a ∼10nm tantalum layer results in 2-5x longer T1​ than bare niobium [2]. Our collaborative investigation shows that this improvement is attributed to tantalum's less lossy surface oxide, which contains fewer sub-oxides than niobium oxide. Moreover, the amorphous Ta2O5 shows a bonding nature closer to crystalline form than amorphous Nb2O5, potentially reducing hydrogen diffusion toward the oxide/metal interface [1, 2]. Moreover, we will briefly discuss our preliminary study of the thin film structure under cryogenic conditions down to 20K, conducted using a liquid helium TEM holder in a Thermo Cs-corrected Titan. We also explored the effect of aluminum deposition rates on aluminum oxide microstructure and qubit lifetime. Although increasing the deposition rate from 0.5 Å/s to 5 Å/s significantly improved oxide layer roughness and thickness variation, the qubits’ coherence remained unchanged. This is likely due to Cooper pairs only tunneling through the thinnest parts of the barrier, making them less affected by the grain boundaries in the thin aluminum films. Additionally, we uncovered a stress-induced grain boundary sliding mechanism, which contributes to short-circuit failures in JJs [4]. Our discovery provides vital insight into oxide microstructure and superconducting qubits’ functionality [5].
Niobium thin films are central to superconducting qubits, but their complex native oxides contribute significantly to microwave losses. A promising mitigation strategy is to suppress oxide formation using engineered thin-film encapsulation layers. Recent experiments have shown that ∼10 nm metallic overlayers on Nb capacitor films can improve the energy relaxation time T 1 of transmon qubits. Here, we present a comparative study of Au-capped Nb films fabricated in situ by molecular beam epitaxy and ex situ by sequential deposition benchmarked against bare Nb films. Using complementary structural, chemical, and spectroscopic techniques, we correlate the interface quality with superconducting electronic properties of the Au surface. Low-temperature scanning tunneling spectroscopy (STS) provides spatially resolved quasiparticle density-of-states maps. While both Au-capped Nb samples exhibit large areas with uniform, fully gapped density of states, clear differences emerge between the two interfaces. Compared to in situ Nb–Au, ex situ Nb–Au exhibits a reduced induced superconducting gap, broadened coherence peak, and localized in-gap states, consistent with a residual Nb x O y layer at the interface. Supported by complementary structural and chemical analyses, these findings demonstrate that STS directly links nanoscale superconducting properties to interface preparation, highlighting the importance of controlled in situ encapsulation for minimizing dissipation and improving quantum coherence.
Quantum computing is a very interesting field, due to the ability of quantum computers to solve many problems much faster than a classical computer. Superconducting qubits are electronic circuits composed of superconducting capacitors, inductors and Josephson junctions, which can implement a physical qubit. However they need improvements in their coherence time to create a viable quantum computing. In this work I study the effect on decoherence caused by two level systems in the native oxide that forms on the surface of qubit. To this end I fabricate 3D transmon qubits using materials grown my molecular beam epitaxy, to which a variety of different surface treatments had been applied. I began by fabricating qubits from niobium/aluminum oxide/niobium trilayers. To this end I developed a self-aligned process for fabricating sub-micron Josephson junctions. This process presented many challenges. During the development of this process, it became clear that niobium was an inferior material for fabricating qubits compared to aluminum. I then switched to making qubits from Aluminum. I began by studying the growth of aluminum on sapphire, and was able to achieve aluminum films with an RMS roughness of 0.2 nm by growing on c-plane sapphire that had been annealed in oxygen at 1100 °C and dipped in BOE. Next I fabricated 3D transmon qubits by adapting the standard shadowmask process for use with MBE. I fabricated qubits with a long in situ oxidation to fully passivate the surface before exposure to air. I also passivated the surface by means of growing co deposited aluminum oxide, and by grown aluminum nitride using a nitrogen plasma source. The coherence times of these qubits were compared to those a control sample that had been exposed to air immediately after growth. Overall it doesn’t appear that cladding the surface changes the coherence time much, however it is difficult to form conclusions with this small sample size. The coated samples appeared to have slightly longer coherence times than the untreated samples, with diffusive oxidation and coating with aluminum oxide providing the largest increase in T1 and diffusive oxidation providing the largest increase in T2.
High Resolution Image Download MS PowerPoint Slide Improving the qubit’s lifetime (T 1 ) is crucial for fault-tolerant quantum computing. Recent advancements have shown that replacing niobium (Nb) with tantalum (Ta) as the base metal significantly increases T 1, likely due to a less lossy native surface oxide. However, understanding the formation mechanism and nature of both surface oxides is still limited. Using aberration-corrected transmission electron microscopy and electron energy loss spectroscopy, we found that Ta surface oxide has fewer suboxides than Nb oxide. We observed an abrupt oxidation state transition from Ta 2 O 5 to Ta, as opposed to the gradual shift from Nb 2 O 5, NbO 2, and NbO to Nb, consistent with thermodynamic modeling. Additionally, amorphous Ta 2 O 5 exhibits a closer-to-crystalline bonding nature than Nb 2 O 5, potentially hindering H atomic diffusion toward the oxide/metal interface. Finally, we propose a loss mechanism arising from the transition between two states within the distorted octahedron in an amorphous structure, potentially causing two-level system loss. Our findings offer a deeper understanding of the differences between native amorphous Ta and Nb oxides, providing valuable insights for advancing superconducting qubits through surface oxide engineering.