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arXiv:2205.03528 · Physical Review Applied

Titanium Nitride Film on Sapphire Substrate with Low Dielectric Loss for Superconducting Qubits

Hao Deng, Zhijun Song, Ran Gao, Tian Xia, Feng Bao, Jiang Xun, Hsiang‐Sheng Ku, Zhisheng Li, Xizheng Ma, Jin Qin, Hantao Sun, Chengchun Tang, Tenghui Wang, Feng Wu, Wenlong Yu, Gengyan Zhang, Xiaohang Zhang, Jingwei Zhou, Xing Zhu, Yaoyun Shi, Hui‐Hai Zhao, Chunqing Deng

Published Feb 6, 2023• 67 citations
arXivHTMLPDF

Abstract

Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride ($\mathrm{Ti}\mathrm{N}$) film and sapphire substrate has good potential because of its chemical stability against oxidization and its high quality at interfaces. In this work, we report a $\mathrm{Ti}\mathrm{N}$ film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of $\mathrm{Ti}\mathrm{N}$ base layers but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss-tangent value at the substrate-metal interface, which is smaller than $8.9\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}$ in a 1-nm disordered layer, and a limiting quality factor of about 7.3 million. By optimizing the interface participation ratio of the two-dimensional (2D) transmon qubit, we reproducibly achieve a quality factor of 5.7 million on average. The best 2D qubits show lifetimes of up to $300\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}$ and quality factors achieving 8.1 million. We demonstrate that $\mathrm{Ti}\mathrm{N}$ film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson-junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits.

DOI
10.1103/physrevapplied.19.024013

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Dielectric loss is one of the major decoherence sources of superconducting qubits. Contemporary high-coherence superconducting qubits are formed by material systems mostly consisting of superconducting films on substrate with low dielectric loss, where the loss mainly originates from the surfaces and interfaces. Among the multiple candidates for material systems, a combination of titanium nitride (TiN\mathrm{Ti}\mathrm{N}TiN) film and sapphire substrate has good potential because of its chemical stability against oxidization and its high quality at interfaces. In this work, we report a TiN\mathrm{Ti}\mathrm{N}TiN film deposited onto sapphire substrate achieving low dielectric loss at the material interface. Through the systematic characterizations of a series of transmon qubits fabricated with identical batches of TiN\mathrm{Ti}\mathrm{N}TiN base layers but different geometries of qubit shunting capacitors with various participation ratios of the material interface, we quantitatively extract the loss-tangent value at the substrate-metal interface, which is smaller than 8.9\ifmmode×\else\texttimes\fi10\ensuremath−48.9\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}8.9\ifmmode×\else\texttimes\fi10\ensuremath−4 in a 1-nm disordered layer, and a limiting quality factor of about 7.3 million. By optimizing the interface participation ratio of the two-dimensional (2D) transmon qubit, we reproducibly achieve a quality factor of 5.7 million on average. The best 2D qubits show lifetimes of up to 300\ensuremathμs300\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}300\ensuremathμs and quality factors achieving 8.1 million. We demonstrate that TiN\mathrm{Ti}\mathrm{N}TiN film on sapphire substrate is an ideal material system for high-coherence superconducting qubits. Our analyses further suggest that the interface dielectric loss around the Josephson-junction part of the circuit could be the dominant limitation of lifetimes for state-of-the-art transmon qubits.
Materials improvements are a powerful approach to reducing loss and decoherence in superconducting qubits because such improvements can be readily translated to large scale processors. Recent work improved transmon coherence by utilizing tantalum (Ta) as a base layer and sapphire as a substrate. The losses in these devices are dominated by two-level systems (TLSs) with comparable contributions from both the surface and bulk dielectrics, indicating that both must be tackled to achieve major improvements in the state of the art. Here we show that replacing the substrate with high-resistivity silicon (Si) dramatically decreases the bulk substrate loss, enabling 2D transmons with time-averaged quality factors (Q) exceeding 1.5 x 10^7, reaching a maximum Q of 2.5 x 10^7, corresponding to a lifetime (T_1) of up to 1.68 ms. This low loss allows us to observe decoherence effects related to the Josephson junction, and we use improved, low-contamination junction deposition to achieve Hahn echo coherence times (T_2E) exceeding T_1. We achieve these material improvements without any modifications to the qubit architecture, allowing us to readily incorporate standard quantum control gates. We demonstrate single qubit gates with 99.994% fidelity. The Ta-on-Si platform comprises a simple material stack that can potentially be fabricated at wafer scale, and therefore can be readily translated to large-scale quantum processors.
Dielectric loss at the interfaces of superconducting films has long been recognized as limiting the performance of state-of-the-art superconducting circuits. Notably, the presence of a native oxide layer on the film is hypothesized to contribute to dielectric loss at the metal-air interface. Here, we explore rhenium as a candidate for the film, motivated by its remarkable property to suppress native oxide formation. We demonstrate rhenium on sapphire as a promising material platform for superconducting circuits through the realization of transmons with mean relaxation times T1T_1T1​ up to 407 microseconds at 5 GHz. Our transmons are supplemented with a loss characterization study, in which we separate the dominant loss mechanisms and construct a loss budget that agrees with our T1T_1T1​ measurements. Further characterization may establish rhenium as a leading candidate for maximizing decoherence time.
Abstract Surface dielectric loss from superconducting transmon qubits is believed to be one of the dominant sources of decoherence. Reducing surface dielectric loss is crucial for achieving a high quality factor and a long relaxation time (T 1), which can be engineered by carefully changing the geometry of a transmon. In this paper, we present a shape-optimization approach to reduce surface dielectric loss in a transmon qubit. The capacitor pads and junction wires of transmons are shaped as spline curves and optimized through the finite-element method and a global optimization algorithm. We find that the participation ratio of capacitor pads and junction wires can be reduced by 15 % − 18 % and 22 % − 26 % compared to previous designs, while the overall footprint and anharmonicity are maintained at acceptable values. As a result, the two-level system-limited quality factor and the corresponding T 1 were increased by 21.6%.
Superconducting qubits show great promise for the realization of fault-tolerant quantum computing, but lossy, amorphous dielectrics limit current technology. Identifying highly crystalline and stoichiometric dielectrics with intrinsically low microwave loss is therefore a central materials challenge, yet experimentally validated platforms remain scarce. This work integrates a crystalline dielectric into a heteroepitaxial TiN/γγγ-Al2_22​O3_33​/TiN trilayer grown via pulsed laser deposition. Correlative high-resolution imaging, diffraction, and spectroscopy measurements confirm the single-crystal quality and chemical integrity of all layers, with minimal defects and limited anion interdiffusion across the oxide-nitride interfaces. Using microwave lumped-element resonators with parallel-plate capacitors, this work establishes an experimentally-measured upper bound for the dielectric loss of γγγ-Al2_22​O3_33​, which has a low intrinsic two-level system loss of δTLS0=(2.8±0.1)×10−5δ_{\text{TLS}}^0 = (2.8 \pm 0.1) \times 10^{-5}δTLS0​=(2.8±0.1)×10−5. These results establish heteroepitaxial oxides on transition metal nitrides as an attractive materials platform for superconducting quantum circuits, particularly for integration into compact device architectures such as merged-element transmons and microwave kinetic inductance detectors.
The Josephson junction and shunt capacitor form a transmon qubit, which is the cornerstone of modern quantum computing platforms. For reliable quantum computing, it is important how long a qubit can remain in a superposition of quantum states, which is determined by the coherence time (T1). The coherence time of a qubit effectively sets the "lifetime" of usable quantum information, determining how long quantum computations can be performed before errors occur and information is lost. There are several sources of decoherence in transmon qubits, but the predominant one is generally considered to be dielectric losses in the natural oxide layer formed on the surface of the superconductor. In this paper, we present a numerical study of microwave surface losses in planar superconducting antennas of different transmon qubit designs. An asymptotic method for estimating the energy participation ratio in ultrathin films of nanometer scales is proposed, and estimates are given for the limits of achievable minimum RF losses depending on the electrical properties of the surface oxide and the interface of the qubit with the substrate material.
Tantalum-based transmon qubits are a promising platform for building large-scale quantum processors. So far, these qubits have been made from tantalum films grown exclusively in the alpha phase (α-Ta). The beta phase of tantalum (\{beta}-Ta) readily nucleates at room temperature, making it attractive for scalable qubit fabrication. However, \{beta}-Ta is widely believed to be detrimental to qubit performance because it has a lower superconducting critical temperature than α-Ta. We challenge this prevailing belief by fabricating low-loss transmon qubits from \{beta}-Ta films on sapphire. Across 11 qubits, the mean time-averaged quality factor is (5.6 +/- 2.3) x 10^6, with the best qubit recording a time-averaged quality factor of (10.1 +/- 1.3) x 10^6. Resonator studies demonstrate that the dominant microwave loss channel is surface two-level systems, with the surface loss contribution for \{beta}-Ta being about twice that of α-Ta. \{beta}-Ta films exhibit significant kinetic inductance, consistent with an estimated magnetic penetration depth of (1.78 +/- 0.02) μm. This work establishes \{beta}-Ta on sapphire as a material platform for realizing low-loss transmon qubits and other superconducting devices such as compact resonators, kinetic inductance detectors, and quasiparticle traps.