State-of-the-art superconducting qubits rely on a limited set of thin-film materials. Expanding their materials palette can improve performance, extend operating regimes, and introduce new functionalities, but conventional thin-film fabrication hinders systematic exploration of new material combinations. Van der Waals (vdW) materials offer a highly modular crystalline platform that facilitates such exploration while enabling gate-tunability, higher-temperature operation, and compact qubit geometries. Yet it remains unknown whether a fully vdW superconducting qubit can support quantum coherence and what mechanisms dominate loss at both low and elevated temperatures in such a device. Here we demonstrate quantum-coherent merged-element transmons made entirely from vdW Josephson junctions. These first-generation, fully crystalline qubits achieve microsecond lifetimes in an ultra-compact footprint without external shunt capacitors. Energy relaxation measurements, together with microwave characterization of vdW capacitors, point to dielectric loss as the dominant relaxation channel up to hundreds of millikelvin. These results establish vdW materials as a viable platform for compact superconducting quantum devices.
Abstract Quantum computers can potentially achieve an exponential speedup versus classical computers on certain computational tasks, recently demonstrated in superconducting qubit processors. However, the capacitor electrodes that comprise these qubits must be large in order to avoid lossy dielectrics. This tactic hinders scaling by increasing parasitic coupling among circuit components, degrading individual qubit addressability, and limiting the spatial density of qubits. Here, we take advantage of the unique properties of van der Waals (vdW) materials to reduce the qubit area by >1000 times while preserving the capacitance while maintaining quantum coherence. Our qubits combine conventional aluminum-based Josephson junctions with parallel-plate capacitors composed of crystalline layers of superconducting niobium diselenide and insulating hexagonal boron nitride. We measure a vdW transmon T1 relaxation time of 1.06 μs, demonstrating a path to achieve high-qubit-density quantum processors with long coherence times, and the broad utility of layered heterostructures in low-loss, high-coherence quantum devices.
Advances in solid-state physics, materials science, and device engineering have accelerated the development of superconducting qubits. Among emerging platforms, van der Waals (vdW) materials and their heterostructures are potentially attractive building blocks for quantum devices, yet their realization in qubit architectures remains largely underexplored. Here we report an all-vdW superconducting qubit based on a NbSe
2-hBN-NbSe
2 junction, in which a thin hBN layer simultaneously provides Josephson coupling and capacitive shunting between two NbSe
2 islands, forming a "merged-element" transmon. Temporal characterization using circuit quantum electrodynamics (cQED) techniques yields an average energy-relaxation time
T1,avg=55 μs, Hahn-echo coherence time
T2E,avg=21 μs, and Ramsey coherence time
T2R,avg=1.9 μs. The relatively low Ramsey time is primarily attributable to an enhanced sensitivity to charge noise consistent with the realized device parameters and not a fundamental limitation. These results show that lumped-element superconducting qubits based on vdW heterostructures can achieve coherence times comparable to those of conventional Al-AlO
x-Al qubits, while offering a reduced device footprint and suppressed stray capacitive coupling.
High-quality, single-crystal van der Waals (vdW) materials provide a promising platform for constructing Josephson junctions, but systematic studies have been limited by fabrication and measurement challenges. Here researchers characterize 24 vertical vdW superconductor-semiconductor junctions, including microwave spectroscopy of an all-vdW transmon qubit. Transport measurements reveal a crossover from proximity- to tunneling-type behavior with increasing semiconductor thickness. The results demonstrate how band alignment and materials engineering can be used to tailor qubit properties, establishing vdW heterostructures as an emerging platform for next-generation superconducting qubits.
Abstract Ultra low-loss microwave materials are crucial for enhancing quantum coherence and scalability of superconducting qubits. Van der Waals (vdW) heterostructure is an attractive platform for quantum devices due to the single-crystal structure of the constituent two-dimensional (2D) layered materials and the lack of dangling bonds at their atomically sharp interfaces. However, new fabrication and characterization techniques are required to determine whether these structures can achieve low loss in the microwave regime. Here we report the fabrication of superconducting microwave resonators using NbSe2 that achieve a quality factor Q > 105. This value sets an upper bound that corresponds to a resistance of ⩽ 192 μ Ω when considering the additional loss introduced by integrating NbSe2 into a standard transmon circuit. This work demonstrates the compatibility of 2D layered materials with high-quality microwave quantum devices.
Incorporating van der Waals (vdW) superconductors into Josephson elements extends circuit-QED beyond conventional Al/AlO
x/Al tunnel junctions and enables microwave probes of unconventional condensates and subgap excitations. In this work, we realize a flux-tunable transmon whose nonlinear inductive element is an Al/AlO
x/4Hb-TaS
2 Josephson junction. The tunnel barrier is formed by sequential deposition and full in-situ oxidation of ultrathin Al layers on an exfoliated 4Hb-TaS
2 flake, followed by deposition of a top Al electrode, yielding a robust, repeatable hybrid junction process compatible with standard transmon fabrication. Embedding the device in a three-dimensional copper cavity, we observe a SQUID-like flux-dependent spectrum that is quantitatively reproduced by a standard dressed transmon--cavity Hamiltonian, from which we extract parameters in the transmon regime. Across measured devices we obtain sub-microsecond energy relaxation (
T1 from
0.08 to
0.69 μs), while Ramsey measurements indicate dephasing faster than our
16 ns time resolution. We also find a pronounced discrepancy between the Josephson energy inferred from spectroscopy and that expected from the Ambegaokar--Baratoff relation using room-temperature junction resistances, pointing to nontrivial junction physics in the hybrid Al/AlO
x/4Hb-TaS
2 system. Although we do not resolve material-specific subgap modes in the present geometry, this work establishes a practical route to integrating 4Hb-TaS
2 into coherent quantum circuits and provides a baseline for future edge-sensitive designs aimed at enhancing coupling to boundary and subgap degrees of freedom in vdW superconductors.
We demonstrate a superconducting transmon qubit in which a Josephson junction has been engineered to act as its own parallel shunt capacitor. This merged-element transmon potentially offers a smaller footprint than conventional transmons. Because it concentrates the electromagnetic energy inside the junction, it reduces the relative electric field participation from other interfaces. By combining micrometer-scale
Al/
AlOx/
Al junctions with long oxidations, we produce functional devices with
EJ/EC in the low-transmon regime (${E}_{J}/{E}_{C}\ensuremath{\lesssim}30$). Cryogenic
I-
V measurements show a sharp
dI/dV structure with low subgap conduction. Qubit spectroscopy of tunable versions shows a small number of avoided level crossings, suggesting the presence of two-level systems. We observe mean
T1 times typically in the range of $10--90\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}$, with some annealed devices exhibiting ${T}_{1}>100\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}$ over several hours. The results suggest that energy relaxation in conventional small-junction transmons is not limited by junction loss.