Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are commonly used to host spin qubits due to their high mobility and low percolation density, the SiGe spacer creates a gap between the qubits and control electrodes, which limits the ability to tune exchange coupling. As a result, residual coupling leads to unwanted single-qubit phase shifts, making multi-qubit control more difficult. In this work, we explore swapping the roles of overlapping nanogates to overcome this issue. By reconfiguring the gate voltages, we demonstrate in situ role switching while maintaining multi-qubit control. Additionally, this method significantly improves the tunability of exchange coupling by several orders of magnitude over the traditional approach. This strategy reduces unintended single-qubit phase shifts and minimizes the complexity of multi-qubit control, supporting scalable growth with minimal experimental overhead.
Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are commonly used to host spin qubits due to their high mobility and low percolation density, the SiGe spacer creates a gap between the qubits and control electrodes, which limits the ability to tune exchange coupling. As a result, residual coupling leads to unwanted single-qubit phase shifts, making multi-qubit control more difficult. In this work, we explore swapping the roles of overlapping nanogates to overcome this issue. By reconfiguring the gate voltages, we demonstrate in situ role switching while maintaining multi-qubit control. Additionally, this method significantly improves the tunability of exchange coupling by several orders of magnitude over the traditional approach. This strategy reduces unintended single-qubit phase shifts and minimizes the complexity of multi-qubit control, supporting scalable growth with minimal experimental overhead.
The growing interest in quantum computers has triggered various approaches for the realization of a large-scale quantum processor that can eventually outperform classical high-performance computers. Quantum computers are attracting increasing attention for their potential to enormously accelerate the simulation of quantum systems and the solution of optimization problems, promising an immense impact, particularly in fields such as chemistry, medicine, and cybersecurity. Although it is still a long way to a practical quantum device, the progress over the last decades has shown encouraging results for a so far limited number of quantum bits, or qubits for short, which represent the computational units of the processor. One promising platform for the implementation of qubits is the spin of charge carriers in semiconductor quantum dots. Especially the use of purified silicon as a host material has significantly improved the performance of quantum operations. Advanced fabrication techniques from the established semiconductor industry in principle allow for the manufacturing of a large number of qubits on a small chip, making them specifically competitive from the perspective of scalability. In this thesis, we investigate challenges for electron spin qubits, particularly in the context of scaling to large qubit arrays for quantum computation. We evaluate the performance of quantum gates, present error mitigation strategies, and propose new quantum operations for two particular spin qubit implementations. In a dense array of Loss-DiVincenzo spin qubits on a chip, quantum information can be electrically controlled by microwave pulses. For neighboring qubits, capacitive couplings of nearby electrodes lead to crosstalk that affects the quantum computation. The first examination in this thesis addresses the effect of crosstalk on idling and operating spin qubits due to an interfering microwave drive. After the analysis and characterization of the performance, we suggest mitigation protocols for different constellations of important quantum gates, which can be easily implemented experimentally. We further show how to reduce crosstalk in a two-qubit gate using an asymmetric driving scheme, resulting in an enormous improvement of the gate performance, and may be used to generally overcome the obstacle of crosstalk. An additional source of errors in spin qubit registers originates from the finite residual exchange interaction between neighboring qubits. It arises due to a finite overlap of the electron wave functions and is caused by the limited speed at which the applied voltages can be controlled. We evaluate the fidelity of doing quantum operations under these circumstances with a varying number of neighboring qubits and present robust mitigation schemes with a decent performance also in the presence of noise. Besides crosstalk, another crucial observation in experiments using microwaves is the heating caused by the delivery of high-power radio frequency pulses to the quantum chip and results in a change of the qubit properties. We therefore investigate the impact of phonons on the energy levels in spin qubits to identify a temperature-dependent correction to the qubit state splitting. As microwave pulses are associated with potential errors, exchange-only qubits represent a promising alternative to achieve universal quantum computation only using baseband control. Therefore, we shift our focus towards exchange-only qubits and outline the main error sources in these systems, including residual exchange interactions between spins, charge noise from the applied voltages, and magnetic fluctuations in the material. A consequential complication of this implementation is that the quantum information can leak out of the qubit states. This effect, however, can be reduced in the presence of a finite magnetic field, as we will demonstrate in this thesis. The gate construction for exchange-only qubits usually requires more pulse steps than in the previous qubit type. Nevertheless, if exchange interactions are switched on simultaneously, this can result in faster quantum gates, as we demonstrate in this thesis. Especially the discovery of a quantum operation that introduces relative phases between computational and leakage states can be of interest for the construction of two-qubit gates and will be discussed in an example for a special operation space.
Planar germanium heterostructures hosting hole-spin qubits are among the leading platforms for scalable semiconductor-based quantum computing. Yet, device performance is hindered by significant quantum dot variability, which leads to uncertainty in qubit energy levels and random orientations of the spin quantization axis. Tailored control of the g-tensor offers a strategy to overcome these limitations and achieve more reliable qubit operations. Here, we introduce a flexible optimization framework for engineering g-tensor properties. As a benchmark, we numerically obtain the optimal reshaping of the out-of-plane potential in a SiGe-Ge-SiGe quantum well to suppress the in-plane g-tensor components and realize the recently proposed gapless single-spin qubit encoding. This reshaping is achieved through heterostructure engineering, specifically by adjusting the silicon concentration within the quantum well, though the framework remains readily adaptable to alternative design objectives. Our results provide practical design principles for improving the tunability of the spin response, paving the way towards large-scale germanium-based quantum computers.
Abstract Universal quantum computation requires high-fidelity single-qubit rotations and controlled two-qubit gates. Along with high-fidelity single-qubit gates, strong efforts have been made in developing robust two-qubit logic gates in electrically gated quantum dot systems to realise a compact and nanofabrication-compatible architecture. Here we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between a pair of double quantum dots by measuring the detuning energy shift (≈75 μeV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast, state-conditional Landau–Zener–Stückelberg oscillations with a conditional π phase flip time of about 80 ps, showing a promising pathway towards multi-qubit entanglement and control in semiconductor quantum dots.
The understanding of quantum mechanics enabled the development of technology such as transistors and has been the foundation of today’s information age. Actively using quantum mechanics to build quantum technology may cause a second revolution in handling information. However, to execute meaningful algorithms, largescale quantum computers have to be built. Such systems are constructed from many qubits, the quantum version of the classical bit. While exciting progress is being made across a range of different qubit platforms, achieving the radical scalability that is necessary to build a largescale processor could be a roadblock. Huge challenges are put on reproducibility, inand output connectivity and material quality. Qubits based on the spins of electrons and holes confined in semiconductor quantum dots may have an important advantage in constructing quantum processors. This platform can profit from the advanced semiconductor industry that was responsible for the first computing revolution. Group IV semiconductors such as silicon and germanium have a high compatibility with industrial semiconductor manufacturing and contain stable isotopes with zero nuclear spin. The materials can be isotopically purified and serve as excellent hosts for spins with long quantum coherence. In Chapter 3 we present quantum dot arrays in silicon metaloxidesemiconductor (SiMOS), strained silicon (Si/SiGe) and strained germanium (Ge/SiGe). A nearly identical integration scheme based on an overlapping gate structure can be used to define quantum dots in each platform. Each platform has its own opportunities, which are carefully assessed. By employing charge sensing we confirm that all quantum dots can be depleted to the singleelectron regime. We compare capacitive crosstalk and find it to be the smallest in SiMOS, relevant for the tuning of quantum dot arrays. Using this crossplatform integration, we can study qubits in each platform with minimal overhead. Long coherence times, excellent singlequbit gate fidelities and twoqubit logic have been demonstrated with SiMOS spin qubits, making it one of the leading platforms for quantum information processing. However, due to the high disorder at the Si/SiO2 interface compared to Ge/SiGe and Si/SiGe interface, quantum dots defined in SiMOS are small and achieving sufficient control over single electrons has been a long standing challenge. In Chapter 5 we show experiments on a double quantum dot that can be isolated from its reservoir. We demonstrate a tunable tunnel coupling between single electrons up to 13 GHz and tunable tunnel rates down to below 1 Hz. These results mark an important step towards the required degree of control over the location of and coupling between quantum dots, necessary for the operation of a large array.
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
The promise of quantum computation is contingent upon physical qubits with both a low gate error rate and broad scalability. Silicon-based spins are a leading qubit platform but demonstrations to date have not utilized fabrication processes capable of extending arrays in two dimensions while maintaining complete control of individual spins. Here, we implement an interconnect process, common in semiconductor manufacturing, with multiple back-end-of-line layers, to show an extendable two-dimensional array of spins with fully controllable nearest-neighbor exchange interactions. In a device using three interconnect layers, we encode exchange-only qubits and achieve average single-qubit gate fidelities consistent with single-layer devices, including fidelities greater than 99.9%, as measured by blind randomized benchmarking. Moreover, with spin connectivity in two dimensions, we show that both linear and right-angle exchange-only qubits with high performance can be formed, enabling qubit array reconfigurability in the presence of defects. This extendable device platform demonstrates that industrial manufacturing techniques can be leveraged for scalable spin qubit technologies.