Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin logical qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of similar strength as epitaxial systems like GaAs and Si/SiGe.
Quantum physics governs the world at the microscopic scale and determines the properties of matter. While classical computers exploit quantum phenomena passively by relying on transistor technology, the concept of a quantum computer with active control over quantum states promises unprecedented possibilities for information encoding and processing. Already developed quantum algorithms are known to perform certain tasks faster than any existing classical algorithms, and quantum computers also promise the possibility for precise simulations of complex quantum systems, a task infeasible for classical computers. These points emphasize the need for the development of quantum computers. Considering quantum computers, the fundamental unit of information is a qubit, a two-level quantum system. Qubits, in contrast to classical bits which are either in state 0 or 1, can exist in quantum superposition of the states 0 and 1, allowing for more complex and parallel computations. While there are many options to encode a logical qubit in a physical system, spin 1/2 particles are considered a natural choice because their spin degree of freedom defines a qubit intrinsically. Semiconductors are a promising platform for hosting spin qubits, as they enable the confinement of electrons with spin 1/2 either through gate-defined quantum dots (QDs) or donor atoms. Among the possible choices of donor atoms, phosphorous 31P is particularly noteworthy because its nucleus has nuclear spin 1/2. Nuclear spins are prime candidates for qubit implementation because they demonstrated exceptionally long coherence times, but the underlying good isolation from their environment is a challenge when it comes to readout and control. In this thesis, we face this challenge by proposing a hybrid quantum dot-donor (QDD) system consisting of a gate defined silicon (Si) QD and a thereto laterally displaced 31P phosphorous donor atom implanted in the Si host material. A single electron is presumed to be confined in the system, which can be moved between the QD and the donor on demand. If its wave function overlaps with the donor atom, electron spin and the donor nuclear spin interact via the hyperfine interaction and the electron can act as a mediator between the nuclear spin qubit and the environment for readout and control, whereas the nuclear spin qubit can be set in an idling mode by shifting the electron to the QD. Importantly, the proposed system can be embedded in circuit quantum electrodynamics (cQED) architectures enabling strong coupling between the system’s electron spin and microwave resonator photons. This coupling is fundamental for the research presented in this thesis. Analyzing the envisioned system, we first propose a novel method for nuclear-spin readout by probing the resonator transmission. This method is based on the observation that the signature of strong electron spin-photon coupling in the resonator transmission is altered due to the hyperfine interaction, in such a manner that well separated signatures for the electron spin-photon coupling conditioned on the state of the nuclear spin arise. As the next step, we turn our attention to the control of nuclear spin qubits and especially to the challenge of realizing a two-qubit gate between distant nuclear spins. In this course, we derive an effective nuclear spin-photon coupling. While expected to be weak, this interaction can be harnessed to couple the nuclear spins of two distant QDD systems dispersively to a microwave resonator resulting in an entangling nuclear spin two-qubit √iSWAP gate with a gate fidelity approaching 90%. These two key findings represent a significant and valuable contribution to the field of quantum information processing using nuclear spins.
Silicon quantum dot spin qubits have become a promising platform for scalable quantum computing because of their small size and compatibility with industrial semiconductor manufacturing processes. Although Si/SiGe heterostructures are commonly used to host spin qubits due to their high mobility and low percolation density, the SiGe spacer creates a gap between the qubits and control electrodes, which limits the ability to tune exchange coupling. As a result, residual coupling leads to unwanted single-qubit phase shifts, making multi-qubit control more difficult. In this work, we explore swapping the roles of overlapping nanogates to overcome this issue. By reconfiguring the gate voltages, we demonstrate in situ role switching while maintaining multi-qubit control. Additionally, this method significantly improves the tunability of exchange coupling by several orders of magnitude over the traditional approach. This strategy reduces unintended single-qubit phase shifts and minimizes the complexity of multi-qubit control, supporting scalable growth with minimal experimental overhead.
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.
Nuclear spins show exceptionally long coherence times but the underlying good isolation from their environment is a challenge when it comes to controlling nuclear spin qubits. A particular difficulty, not only for nuclear spin qubits, is the realization of two-qubit gates between distant qubits. Recently, strong coupling between an electron spin and microwave resonator photons as well as a microwave resonator mediated coupling between two electron spins both in the resonant and the dispersive regime have been reported and, thus, a microwave resonator mediated electron spin two-qubit gate seems to be in reach. Inspired by these findings, we theoretically investigate the interaction of a microwave resonator with a hybrid quantum dot-donor (QDD) system consisting of a gate-defined Si QD and a laterally displaced 31P phosphorous donor atom implanted in the Si host material. We find that driving the QDD system allows to compensate the frequency mismatch between the donor nuclear spin splitting in the MHz regime and typical superconducting resonator frequencies in the GHz regime, and also enables an effective nuclear spin-photon coupling. While we expect this coupling to be weak, we predict that coupling the nuclear spins of two distant QDD systems dispersively to the microwave resonator allows the implementation of a resonator-mediated nuclear spin two-qubit iSWAP gate with a gate fidelity approaching 90.
We describe high-fidelity entangling gates between singlet-triplet qubits (STQs) which are coupled via one quantum state (QS). The QS can be provided by a quantum dot itself or by another confined system. The orbital energies of the QS are tunable using an electric gate close to the QS, which changes the interactions between the STQs independent of their single-qubit parameters. Short gating sequences exist for controlled not (cnot) operations. We show that realistic quantum dot setups permit excellent entangling operations with gate infidelities below ${10}^{\ensuremath{-}3}$, which is lower than the quantum error correction threshold of the surface code. We consider limitations from fabrication errors, hyperfine interactions, spin-orbit interactions, and charge noise in GaAs and Si heterostructures.
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the TRabi from 7 to 11 μs at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 ± 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.