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arXiv:2308.00834 · Applied Physics Letters

Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

Thomas Hazard, Wayne H. Woods, Danna Rosenberg, Rabindra Nath Das, Cyrus F. Hirjibehedin, David K. Kim, J.M. Knecht, Justin Mallek, Alexander J. Melville, Bethany M. Niedzielski, Kyle Serniak, Katrina Sliwa, D. Yost, Jonilyn Yoder, William D. Oliver, Mollie E. Schwartz

Published Oct 9, 2023• 12 citations
arXivHTMLPDF

Abstract

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.

DOI
10.1063/5.0170055

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The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.
Abstract As superconducting qubit circuits become more complex, addressing a large array of qubits becomes a challenging engineering problem. Dense arrays of qubits benefit from, and may require, access via the third dimension to alleviate interconnect crowding. Through-silicon vias (TSVs) represent a promising approach to three-dimensional (3D) integration in superconducting qubit arrays—provided they are compact enough to support densely-packed qubit systems without compromising qubit performance or low-loss signal and control routing. In this work, we demonstrate the integration of superconducting, high-aspect ratio TSVs—10 μm wide by 20 μm long by 200 μm deep—with superconducting qubits. We utilize TSVs for baseband control and high-fidelity microwave readout of qubits using a two-chip, bump-bonded architecture. We also validate the fabrication of qubits directly upon the surface of a TSV-integrated chip. These key 3D-integration milestones pave the way for the control and readout of high-density superconducting qubit arrays using superconducting TSVs.
Josephson junctions form the essential non-linearity for almost all superconducting qubits. The junction is formed when two superconducting electrodes come within ∼1 nm of each other. Although the capacitance of these electrodes is a small fraction of the total qubit capacitance, the nearby electric fields are more concentrated in dielectric surfaces and can contribute substantially to the total dissipation. We have developed a technique to experimentally investigate the effect of these electrodes on the quality of superconducting devices. We use λ/4 coplanar waveguide resonators to emulate lumped qubit capacitors. We add a variable number of these electrodes to the capacitive end of these resonators and measure how the additional loss scales with the number of electrodes. We then reduce this loss with fabrication techniques that limit the amount of lossy dielectrics. We then use these techniques for the fabrication of Xmon qubits on a silicon substrate to improve their energy relaxation times by a factor of 5.
We demonstrate control and readout of a superconducting artificial atom based on a transmon qubit using a compact lumped-element resonator. The resonator consists of a parallel-plate capacitor with a wire geometric inductor. The footprint of the resonators is about 200 × 200 μm2, which is similar to the standard transmon size and one or two orders of magnitude more compact in the occupied area compared to coplanar waveguide resonators. We observe coherent Rabi oscillations and obtain time-domain properties of the transmon. The work opens a door to miniaturize essential components of superconducting circuits and to further scale up quantum systems with superconducting transmons.
Superconducting quantum circuits are promising systems for experiments testing fundamental quantum mechanics on a macroscopic scale and for applications in quantum information processing. We report on the fabrication and characterization of superconducting flux qubits, readout dc SQUIDs, on-chip shunting capacitors, and high-quality coplanar waveguide resonators. Furthermore, we discuss the tunability and fundamental symmetry aspects inherent to all superconducting qubits, which can be regarded as artificial solid-state atoms. Comparing them to their natural counterparts, we discuss first- and second-order energy shifts due to static control fields. Additionally, we present an intuitive derivation of the first- and second-order matrix elements for level transitions in the presence of coherent microwave driving.
We fabricate and characterize superconducting through-silicon vias and electrodes suitable for superconducting quantum processors. We measure internal quality factors of a million for test resonators excited at single-photon levels, on chips with superconducting vias used to stitch ground planes on the front and back sides of the chips. This resonator performance is on par with the state of the art for silicon-based planar solutions, despite the presence of vias. Via stitching of ground planes is an important enabling technology for increasing the physical size of quantum processor chips, and is a first step toward more complex quantum devices with three-dimensional integration.
We report our development on design, fabrication and characterization of various superconducting resonators for quantum device applications. The resonators are developed mainly for superconducting qubit implementation in circuit QED structure, but future application will include photon detectors such as microwave kinetic inductance detectors. First we designed and fabricated half-wavelength coplanar waveguide resonators with niobium thin film on a high resistive silicon wafer, with the fundamental frequencies in the range of 1 to 8 GHz. The loaded quality factors are controlled by the coupling capacitors, and the lower bound of the intrinsic quality factor was measured down to 7 mK in the dilution refrigerator. We have also designed quarter-wavelength resonators and lumped LC resonators coupled to a transmission line, and characterized multiple resonators in a single transmission line. For the 3D transmon qubit application, we designed and fabricated a rectangular box resonator with superconducting aluminum. The intrinsic quality factor of the box resonator exceeds three million at 7 mK. We will also present basic results on the integration of a transmon qubit in the superconducting resonator.