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arXiv:1602.08057

Biphoton statistic of quantum light generated on a silicon chip

Xiyuan Lu, Wei C. Jiang, Jidong Zhang, Qiang Lin

Published Feb 25, 2016• 0 citations
arXivHTMLPDF

Abstract

We demonstrate a silicon-chip biphoton source with an unprecedented quantum cross correlation up to ${\rm g_{si}^{(2)}(0) = (2.58 \pm 0.16) \times 10^4}$. The emitted biphotons are intrinsically single-mode, with self correlations of ${\rm g_{ss}^{(2)}(0) = 1.90 \pm 0.05}$ and ${\rm g_{ii}^{(2)}(0) = 1.87 \pm 0.06}$ for signal and idler photons, respectively. We observe the waveform asymmetry of cross correlation between signal and idler photons and reveal the identical and non-exponential nature of self correlations of individual signal and idler photon modes, which is a nature of cavity-enhanced nonlinear optical processes. The high efficiency and high purity of the biphoton source allow us to herald single photons with a conditional self correlation $\rm g_{c}^{(2)}(0)$ as low as $\rm 0.0059 \pm 0.0014$ at a pair flux of $\rm 1.95 \times 10^5$ pairs/s, which remains below $\rm 0.026 \pm 0.001$ for a biphoton flux up to $\rm 2.93 \times 10^6$ pairs/s, with a photon preparation efficiency in the single-mode fiber up to 51%, among the best values that have ever been reported. Our work unambiguously demonstrates that silicon photonic chips are superior material and device platforms for integrated quantum photonics.

DOI
10.48550/arxiv.1602.08057

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We demonstrate a silicon-chip biphoton source with an unprecedented quantum cross correlation up to gsi(2)(0)=(2.58±0.16)×104{\rm g_{si}^{(2)}(0) = (2.58 \pm 0.16) \times 10^4}gsi(2)​(0)=(2.58±0.16)×104. The emitted biphotons are intrinsically single-mode, with self correlations of gss(2)(0)=1.90±0.05{\rm g_{ss}^{(2)}(0) = 1.90 \pm 0.05}gss(2)​(0)=1.90±0.05 and gii(2)(0)=1.87±0.06{\rm g_{ii}^{(2)}(0) = 1.87 \pm 0.06}gii(2)​(0)=1.87±0.06 for signal and idler photons, respectively. We observe the waveform asymmetry of cross correlation between signal and idler photons and reveal the identical and non-exponential nature of self correlations of individual signal and idler photon modes, which is a nature of cavity-enhanced nonlinear optical processes. The high efficiency and high purity of the biphoton source allow us to herald single photons with a conditional self correlation gc(2)(0)\rm g_{c}^{(2)}(0)gc(2)​(0) as low as 0.0059±0.0014\rm 0.0059 \pm 0.00140.0059±0.0014 at a pair flux of 1.95×105\rm 1.95 \times 10^51.95×105 pairs/s, which remains below 0.026±0.001\rm 0.026 \pm 0.0010.026±0.001 for a biphoton flux up to 2.93×106\rm 2.93 \times 10^62.93×106 pairs/s, with a photon preparation efficiency in the single-mode fiber up to 51%, among the best values that have ever been reported. Our work unambiguously demonstrates that silicon photonic chips are superior material and device platforms for integrated quantum photonics.
We demonstrate a silicon-chip biphoton source with an unprecedented quantum cross-correlation up to g si (2) (0) = (2.58 ± 0.16) × 10 4 . The emitted photons are within single whispering gallery mode with self-correlations of g ss (2) (0) = 1.90 ± 0.05 and g ii (2) (0) = 1.87 ± 0.06 for signal and idler photons, respectively. We observe the waveform asymmetry of cross-correlation between signal and idler photons and reveal the identical and nonexponential nature of self-correlations of individual signal and idler photon modes, which is the nature of cavity-enhanced nonlinear optical processes. The high efficiency and high purity of the biphoton source allow us to herald single photons with a conditional self-correlation g c (2) (0) as low as 0.0059 ± 0.0014 at a pair flux of 1.95 × 10 5 pairs/s, which remains below 0.026 ± 0.001 for a biphoton flux up to 2.93 × 10 6 pairs/s with a tunable photon preparation efficiency in the single-mode fiber up to 51% and a raw heralding efficiency up to 3.4%. Our work unambiguously demonstrates that silicon photonic chips are superior material and device platforms for integrated quantum photonics.
Integrated quantum photonics relies critically on photon sources that have great purity, single-mode property, scalability, integrability and flexibility for both integrated quantum computing and long-haul quantum communication. Here we report a photon-pair/single-photon source that utilizes cavity-enhanced four-wave mixing in a high-Q silicon microresonator. The photon-pair source has a spectral brightness of 6:25 × 108 pairs/s/mW2/GHz and a quantum cross-correlation of g(2)si (0) = (2:58 ± 0:16) × 104. The generated photons are single-mode, with a quantum self-correlation of 1:87 ± 0:05. The heralded single photons has conditional photon autocorrelation gc(2) as low as 0:0075 ± 0:0017 at 5:9 × 104 pair/s.
Advances in quantum photonics have shown that chip-scale quantum devices are translating from the realm of basic research to applied technologies. Recent developments in integrated photonic circuits and single photon detectors indicate that the bottleneck for fidelity in quantum photonic processes will ultimately lie with the photon sources. We present and demonstrate a silicon nanophotonic chip capable of emitting telecommunication band photon pairs that exhibit the highest raw degree of time-energy entanglement from a micro/nanoscale source, to date. Biphotons are generated through cavity-enhanced spontaneous four-wave mixing (SFWM) in a high-Q silicon microdisk resonator, wherein the nature of the triply resonant generation process leads to a dramatic Purcell enhancement, resulting in highly efficient pair creation rates as well as extreme suppression of the photon noise background. The combination of the excellent photon source and a new phase locking technique allow for the observation of a nearly perfect coincidence visibility of (96.6 ± 1.1)%, without any background subtraction, at a large pair generation rate of (4.40 ± 0.07) × 10 5 pairs/s.
While integrated photonics is a robust platform for quantum information processing, architectures for photonic quantum computing place stringent demands on high quality information carriers. Sources of single photons that are highly indistinguishable and pure, that are either near-deterministic or heralded with high efficiency, and that are suitable for mass-manufacture, have been elusive. Here, we demonstrate on-chip photon sources that simultaneously meet each of these requirements. Our photon sources are fabricated in silicon using mature processes, and exploit a dual-mode pump-delayed excitation scheme to engineer the emission of spectrally pure photon pairs through inter-modal spontaneous four-wave mixing in low-loss spiralled multi-mode waveguides. We simultaneously measure a spectral purity of 0.9904 ± 0.0006, a mutual indistinguishability of 0.987 ± 0.002, and >90% intrinsic heralding efficiency. We measure on-chip quantum interference with a visibility of 0.96 ± 0.02 between heralded photons from different sources.
Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Here we report a chip-scale photon-pair source on the silicon-on-insulator platform that utilizes dramatic cavity-enhanced four-wave mixing in a high-Q silicon microdisk resonator. The device is able to produce high-quality photon pairs at different wavelengths with a high spectral brightness of 6.24×10(7) pairs/s/mW(2)/GHz and photon-pair correlation with a coincidence-to-accidental ratio of 1386 ± 278 while pumped with a continuous-wave laser. The superior performance, together with the structural compactness and CMOS compatibility, opens up a great avenue towards quantum silicon photonics with capability of multi-channel parallel information processing for both integrated quantum computing and long-haul quantum communication.
The capability of realizing quantum photonics implementations on-chip will have a strong impact on several aspects of quantum computation and information processing. The implementation of large scale integrated quantum photonic technologies requires on-chip reconfigurable waveguide circuits as well as single-photon sources and detectors. Many successes have been made in recent years to demonstrate complex quantum circuits in many material platforms. Among all these platforms, the Silicon-on-Insulator (SOI) platform is outstanding as it is well developed for classical applications and therefore deploys a high component density, mature fabrication techniques and compatibility with the telecom regime and the complementary metal-oxide-semiconductor (CMOS) technology. However, the lack of on-demand non-classical light sources, directly incorporated in silicon chips, forces the use of nonlinear processes to generate non-classical light states: the probabilistic nature of the emission process sets a limit in the maximally achievable experimental complexity. The use of on-demand sources will have a strong impact on the device’s scalability.