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Optics Express

Silicon-chip source of bright photon pairs

Wei C. Jiang, Xiyuan Lu, Jidong Zhang, Oskar J. Painter, Qiang Lin

Published Jul 31, 2015• 89 citations
Publisher

Abstract

Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Here we report a chip-scale photon-pair source on the silicon-on-insulator platform that utilizes dramatic cavity-enhanced four-wave mixing in a high-Q silicon microdisk resonator. The device is able to produce high-quality photon pairs at different wavelengths with a high spectral brightness of 6.24×10(7) pairs/s/mW(2)/GHz and photon-pair correlation with a coincidence-to-accidental ratio of 1386 ± 278 while pumped with a continuous-wave laser. The superior performance, together with the structural compactness and CMOS compatibility, opens up a great avenue towards quantum silicon photonics with capability of multi-channel parallel information processing for both integrated quantum computing and long-haul quantum communication.

DOI
10.1364/oe.23.020884

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Integrated quantum photonics relies critically on the purity, scalability, integrability, and flexibility of a photon source to support diverse quantum functionalities on a single chip. Here we report a chip-scale photon-pair source on the silicon-on-insulator platform that utilizes dramatic cavity-enhanced four-wave mixing in a high-Q silicon microdisk resonator. The device is able to produce high-quality photon pairs at different wavelengths with a high spectral brightness of 6.24×10(7) pairs/s/mW(2)/GHz and photon-pair correlation with a coincidence-to-accidental ratio of 1386 ± 278 while pumped with a continuous-wave laser. The superior performance, together with the structural compactness and CMOS compatibility, opens up a great avenue towards quantum silicon photonics with capability of multi-channel parallel information processing for both integrated quantum computing and long-haul quantum communication.
Integrated quantum photonics relies critically on photon sources that have great purity, single-mode property, scalability, integrability and flexibility for both integrated quantum computing and long-haul quantum communication. Here we report a photon-pair/single-photon source that utilizes cavity-enhanced four-wave mixing in a high-Q silicon microresonator. The photon-pair source has a spectral brightness of 6:25 × 108 pairs/s/mW2/GHz and a quantum cross-correlation of g(2)si (0) = (2:58 ± 0:16) × 104. The generated photons are single-mode, with a quantum self-correlation of 1:87 ± 0:05. The heralded single photons has conditional photon autocorrelation gc(2) as low as 0:0075 ± 0:0017 at 5:9 × 104 pair/s.
Efficient generation of correlated photon pairs through spontaneous four-wave mixing (SFWM) in silicon devices serves as a crucial resource for integrated quantum photonic technologies. Enhancing the intracavity field in high-quality-factor (Q) resonators enables energy-efficient photon-pair generation, with the photon-pair generation rate (PGR) scaling cubically with the Q factor. In this work, we demonstrate a high-brightness on-chip photon-pair source based on a racetrack resonator with a high Q factor of 1.75 × 105, fabricated on a silicon-on-insulator (SOI) platform requiring only a single-etch process. By combining uniform multimode waveguides with optimized Euler bends, we suppress fundamental mode loss and minimize round-trip cavity dispersion, thereby improving both field enhancement and frequency matching for SFWM processes. With a continuous-wave pump of only 44.67 µW, we achieve an on-chip brightness of 1.54 GHz·mW−2·nm−1. These results establish a fabrication-friendly and efficient photon-pair source architecture for integrated quantum photonic systems.
Chip-scale integrated photonic circuits provide an attractive platform for the implementation of many quantum photonic technologies ranging from precise metrology to secure communication and quantum computation. In particular, silicon photonic platforms support micron-scale nonlinear optical sources of non-classical light which can be mass manufactured using the robust fabrication processes pioneered by the CMOS microelectronics industry. Integration of these quantum photonic sources with high-performance classical photonic devices on the same chip is required for truly scalable quantum information technologies. Integrated nonlinear resonators are investigated as sources of quantum mechanically correlated photon pair sources. An all-order dispersion engineering method is presented as a robust design synthesis for micoring sources. In addition, a novel concept of coupled mode dispersion compensation is proposed and demonstrated, providing significantly improved performance characteristics of resonant four-wave mixing sources. Next a photon pair source is demonstrated in a commercial CMOS microelectronics process opening the door to future integration of quantum photonics with electronic logic and control circuits. Classical nonlinear optical measurements of stimulated four-wave mixing are used for the first time to accurately predict the quantum correlations from the same device operating in the photon pair regime. Next the first demonstration of fully on-chip pump rejection is demonstrated with over 95 dB pump extinction improving the figures of merit from previous demonstrations by multiple orders of magnitude, including losses, detected pair rates and size. Finally, proposals for introducing novel degrees of freedom provided by an integrated platform are presented for further improving the performance of both photon pair and classical nonlinear optical sources.
Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimode evanescent coupling scheme. This design achieves a pair generation rate above 106^{6}6 s−1^{-1}−1mW−1^{-1}−1 and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.
Photon-pair sources are critical building blocks for photonic quantum systems. Leveraging Kerr nonlinearity and cavity-enhanced spontaneous four-wave mixing, chip-scale photon-pair sources can be created using microresonators built on photonic integrated circuit. For practical applications, a high microresonator quality factor Q is mandatory to magnify photon-pair sources' brightness and reduce their linewidth. The former is proportional to Q^{4}, while the latter is inversely proportional to Q. Here, we demonstrate an integrated, microresonator-based, narrowband photon-pair source. The integrated microresonator, made of silicon nitride and fabricated using a standard CMOS foundry process, features ultralow loss down to 0.03 dB/cm and intrinsic Q factor exceeding 10^{7}. The photon-pair source has brightness of 1.17×10^{9} Hz/mW^{2}/GHz and linewidth of 25.9 MHz, both of which are record values for silicon-photonics-based quantum light source. It further enables a heralded single-photon source with heralded second-order correlation g_{h}^{(2)}(0)=0.0037(5), as well as an energy-time entanglement source with a raw visibility of 0.973(9). Our work evidences the global potential of ultralow-loss integrated photonics to create novel quantum light sources and circuits, catalyzing efficient, compact, and robust interfaces to quantum communication and networks.
Hybrid photonic circuits, harnessing the complementary strengths of multiple materials, represent a key resource to enable compact, scalable platforms for quantum technologies. In particular, the availability of bright sources of tunable biphoton states is eagerly awaited to meet the variety of applications currently under development. In this work we demonstrate a heterogeneously integrated device working at room temperature that merges biphoton generation and on-chip quantum state engineering, combining an AlGaAs photon-pair source with a CMOS-compatible silicon-on-insulator (SOI) circuit. Photon pairs are generated in the C telecom band via spontaneous parametric down-conversion and transferred to the SOI chip through a multimodal evanescent coupling scheme. This design achieves a pair generation rate above 10 6 s −1 mW −1 and a coincidence-to-accidental ratio up to 600. Crucially, the coupling design induces strong and predictable transformations of the biphoton joint spectral amplitude, enabling complex quantum state engineering entirely on-chip in a compact device compliant with electrical pumping.