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arXiv:2404.13387 · Physical Review Letters

Ultralow-Loss Integrated Photonics Enables Bright, Narrowband, Photon-Pair Sources

Ruiyang Chen, Yi-Han Luo, Jinbao Long, Baoqi Shi, Chen Shen, Junqiu Liu

Published Aug 22, 2024• 43 citations
arXivHTMLPDF

Abstract

Photon-pair sources are critical building blocks for photonic quantum systems. Leveraging Kerr nonlinearity and cavity-enhanced spontaneous four-wave mixing, chip-scale photon-pair sources can be created using microresonators built on photonic integrated circuit. For practical applications, a high microresonator quality factor Q is mandatory to magnify photon-pair sources' brightness and reduce their linewidth. The former is proportional to Q^{4}, while the latter is inversely proportional to Q. Here, we demonstrate an integrated, microresonator-based, narrowband photon-pair source. The integrated microresonator, made of silicon nitride and fabricated using a standard CMOS foundry process, features ultralow loss down to 0.03 dB/cm and intrinsic Q factor exceeding 10^{7}. The photon-pair source has brightness of 1.17×10^{9} Hz/mW^{2}/GHz and linewidth of 25.9 MHz, both of which are record values for silicon-photonics-based quantum light source. It further enables a heralded single-photon source with heralded second-order correlation g_{h}^{(2)}(0)=0.0037(5), as well as an energy-time entanglement source with a raw visibility of 0.973(9). Our work evidences the global potential of ultralow-loss integrated photonics to create novel quantum light sources and circuits, catalyzing efficient, compact, and robust interfaces to quantum communication and networks.

DOI
10.1103/physrevlett.133.083803

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Nature•Mar 19, 2025•42 citations
Photon-pair sources are critical building blocks for photonic quantum systems. Leveraging Kerr nonlinearity and cavity-enhanced spontaneous four-wave mixing, chip-scale photon-pair sources can be created using microresonators built on photonic integrated circuit. For practical applications, a high microresonator quality factor Q is mandatory to magnify photon-pair sources' brightness and reduce their linewidth. The former is proportional to Q^{4}, while the latter is inversely proportional to Q. Here, we demonstrate an integrated, microresonator-based, narrowband photon-pair source. The integrated microresonator, made of silicon nitride and fabricated using a standard CMOS foundry process, features ultralow loss down to 0.03 dB/cm and intrinsic Q factor exceeding 10^{7}. The photon-pair source has brightness of 1.17×10^{9} Hz/mW^{2}/GHz and linewidth of 25.9 MHz, both of which are record values for silicon-photonics-based quantum light source. It further enables a heralded single-photon source with heralded second-order correlation g_{h}^{(2)}(0)=0.0037(5), as well as an energy-time entanglement source with a raw visibility of 0.973(9). Our work evidences the global potential of ultralow-loss integrated photonics to create novel quantum light sources and circuits, catalyzing efficient, compact, and robust interfaces to quantum communication and networks.
Entangled photon-pair sources are essential components for emerging quantum information-processing technologies. Among various platforms, on-chip microresonators offer strong potential due to their resonant enhancement and suitability for wafer-scale integration. In this study, we demonstrate ultrabright entangled photon-pair generation from high- Q silicon microring resonators. By optimizing the device geometry and coupling configuration to suppress sidewall scattering and selectively excite the fundamental mode, we achieve single-mode resonance with an intrinsic Q -factor of 1.26 × 10 6 using only standard fabrication processes available in CMOS foundries. The resulting high- Q resonator yields a record-high brightness coefficient of 3.9 × 10 9 Hz/GHz/mW 2 . At an on-chip pump power of 240 μW, we obtain a maximum brightness of 22.0 MHz/GHz and a maximum photon-pair generation rate of 9.19 MHz. At a low-pump power of 10 μW, Franson-type two-photon interference exhibits a visibility of 98.0 ± 0.2%, confirming high-quality time–energy entanglement. These results show that narrow bandwidth and high generation rate can be achieved simultaneously in CMOS-compatible silicon photonic sources, thereby advancing their use in quantum repeaters and scalable quantum networks.
Quantum state distribution over vast distances is essential for global-scale quantum networks and fundamental test of quantum physics at space scale. While satellite platforms have demonstrated thousand-kilometer entanglement distribution, quantum key distribution and quantum teleportation with ground, future constellations and deep-space missions demand photon sources that are robust, compact, and power-efficient. Integrated photonics offers a scalable solution, yet a critical spectral gap persists. Although telecom-band integrated photon-pair sources are well established, near-visible photons offer distinct advantages for satellite-to-ground links by mitigating diffraction loss and maximizing the collection efficiency of optical telescopes. Scalable integrated sources in this regime have remained elusive due to the fundamental challenge of achieving anomalous dispersion in materials transparent at visible wavelengths. Here we bridge this gap by demonstrating an integrated near-visible photon-pair source based on a wide-bandgap, ultralow-loss, silicon nitride (Si3_33​N4_44​) microresonator. By engineering the dispersion of higher-order waveguide modes, we overcome the intrinsic normal dispersion limit to achieve efficient phase matching. The device exhibits a spectral brightness of 4.87$\times101010^7$ pairs/s/mW2^22/GHz and a narrow photon linewidth of 357 MHz. We report high-purity heralded single-photon generation with a heralding rate up to 2.3 MHz and a second-order correlation function as low as 0.0041. Furthermore, we observe energy-time entanglement with 98.4% interference visibility, violating the CHSH limit even at flux exceeding 40.6 million pairs/s. Combined with the proven radiation hardness of Si3_33​N4_44​, this source constitutes a flight-ready hardware foundation for daylight quantum communications and protocols requiring on-orbit multiphoton interference.
Photonic integrated circuits offer a scalable and robust route toward quantum information technologies by consolidating photon sources and linear optical networks onto compact, wafer-manufacturable chips. Although silicon photonics has enabled diverse discrete-variable quantum breakthroughs -- spanning multiphoton entanglement, quantum networking, and photonic qubit fusion for quantum computing -- scaling these platforms beyond proof-of-principle demonstrations remains severely constrained by a critical system-level bottleneck. Optical loss compounds rapidly across photon generation, routing, and state analysis, causing multiphoton generation probabilities to plummet exponentially as circuit depth and complexity grow. Here we overcome this rate-loss barrier by demonstrating a monolithic, ultralow-loss silicon nitride (Si3_33​N4_44​) integrated photonic platform engineered for high-performance discrete-variable quantum information processing. Our architecture seamlessly integrates narrowband photon-pair sources with low-loss qubit-fusion circuits and reconfigurable state-analysis interferometers. The on-chip sources prepare Einstein-Podolsky-Rosen (EPR) states with a fidelity of 0.9875(3) and exhibit near-unity photon indistinguishability, yielding a heralded Hong-Ou-Mandel interference visibility of 0.990(6). By executing on-chip fusion of two EPR states, we synthesize and characterize four-photon Greenberger-Horne-Zeilinger states with a record fidelity of 0.943(8) and a fourfold count rate of 27 Hz -- more than two orders of magnitude higher than previous silicon-photonic implementations. Combined with standard CMOS-compatible fabrication on 150-mm-diameter wafers, these results establish ultralow-loss Si3_33​N4_44​ integrated photonics as a definitive, manufacturable platform for deployable, large-scale quantum information processors.
CMOS-compatible photonic chips are highly desirable for real-world quantum optics devices due to their scalability, robustness, and integration with electronics. Despite impressive advances using Silicon nanostructures, challenges remain in reducing their linear and nonlinear losses and in creating narrowband photons necessary for interfacing with quantum memories. Here we demonstrate the potential of the silicon nitride (Si3N4) platform by realizing an ultracompact, bright, entangled photon-pair source with selectable photon bandwidths down to 30 MHz, which is unprecedented for an integrated source. Leveraging Si3N4's moderate thermal expansion, simple temperature control of the chip enables precise wavelength stabilization and tunability without active control. Single-mode photon pairs at 1550 nm are generated at rates exceeding 107 s-1 with mW's of pump power and are used to produce time-bin entanglement. Moreover, Si3N4 allows for operation from the visible to the mid-IR, which make it highly promising for a wide range of integrated quantum photonics applications.
Abstract Entangled photon pairs from spontaneous parametric down-conversion (SPDC) 1 are central to many quantum applications 2–6 . SPDC is typically performed in non-centrosymmetric systems 7 with an inherent second-order nonlinearity ( χ (2) ) 8–10 . We demonstrate strong narrowband SPDC with an on-chip rate of 0.8 million pairs per second in Si 3 N 4 . Si 3 N 4 is the pre-eminent material for photonic integration and also exhibits the lowest waveguide loss (which is essential for integrated quantum circuits). However, being amorphous, silicon nitride lacks an intrinsic χ (2) , which limits its role in photonic quantum devices. We enabled SPDC in Si 3 N 4 by combining strong light-field enhancement inside a high optical Q -factor microcavity with an optically induced space-charge field. We present narrowband photon pairs with a high spectral brightness. The quantum nature of the down-converted photon pairs is verified through coincidence measurements. This light source, based on Si 3 N 4 integrated photonics technology, unlocks new avenues for quantum systems on a chip.