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arXiv:1408.0270 · Applied Physics Letters

Anomalous response of superconducting titanium nitride resonators to terahertz radiation

Juan Bueno, P. C. J. J. Coumou, Guoji Zheng, Pieter de Visser, T. M. Klapwijk, E. F. C. Driessen, Simon M. Doyle, J. J. A. Baselmans

Published Nov 10, 2014• 25 citations
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Abstract

We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations.

DOI
10.1063/1.4901536

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arXiv:1911.06419•Nov 14, 2019•2 citations
We present an experimental study of kinetic inductance detectors (KIDs) fabricated of atomic layer deposited TiN films and characterized at radiation frequencies of 350 GHz. The responsivity to radiation is measured and found to increase with the increase in radiation powers, opposite to what is expected from theory and observed for hybrid niobium titanium nitride/aluminium (NbTiN/Al) and all-aluminium (all-Al) KIDs. The noise is found to be independent of the level of the radiation power. The noise equivalent power improves with higher radiation powers, also opposite to what is observed and well understood for hybrid NbTiN/Al and all-Al KIDs. We suggest that an inhomogeneous state of these disordered superconductors should be used to explain these observations.
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature TcT_\mathrm{c}Tc​ , sheet resistance RsR_\mathrm{s}Rs​ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15 W/Hz\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}NEPopt​≈2.3×10−15 W/Hz​ , which is promising for passive terahertz imaging applications.
Abstract We have designed and fabricated a superconducting hybrid NbTiN-Al kinetic inductance detector (KID) over a broad band centered at 4.3 THz. The detector sensitivity is characterized by changing the bath temperature in a dark environment. Both amplitude and phase readouts are performed. The measured electrical noise equivalent power for phase readout is about 2.6 × 10−18 W · Hz−0.5 at 200 mK. This ultra-sensitive KID, which enables large arrays with frequency domain multiplexing, is promising for imaging instruments in space-based far-infrared observatories.
Microwave Kinetic Inductance Detectors (MKIDs), just like a planar resonance cavity resonating at a microwave frequency, are emerging as a kind of high-sensitivity detector suitable for large format arrays at terahertz (THz) wavelengths. There are two types of MKIDs, namely distributed (or antenna-coupled) MKIDs and lumped-element MKIDs (aka LeKIDs). Various superconducting thin films (such as Al, TiN, NbTiN, NbN, and Nb) have been investigated for MKIDs. They do work so long as the detected photon energy exceeds their energy gap, but their response and noise behaviors are yet to be fully understood. Here we report on the design, fabrication, and characterization of distributed and lumped-element MKIDs made of NbTiN superconducting film. Detailed simulation and measurement results will be presented.
We have measured and compared the response of hybrid NbTiN-Al Microwave Kinetic Inductance Detectors (MKIDs) to changes in bath temperature and illumination by sub-mm radiation. We show that these two stimulants have an equivalent effect on the resonance feature of hybrid MKIDs. We determine an electrical noise equivalent power (NEP) from the measured temperature responsivity, quasiparticle recombination time, superconducting transition temperature, and noise spectrum, all of which can be measured in a dark environment. For the two hybrid NbTiN-Al MKIDs studied in detail, the electrical NEP is within a factor of two of the optical NEP, which is measured directly using a blackbody source.
As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detector is one of the key performance indicators. Herein a noise power spectrum analysis method is introduced in detail, which can accurately and effectively analyze the noise spectrum of kinetic inductance detector in a wide frequency range. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting the appropriate frequency resolutions for different frequency bands. This method is used to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micromachining processes. We deposite a 25-nm-thick aluminum film on high-resistivity silicon substrate for one device, while place one silicon nitride (SiNx) film on the top and one on the bottom of the aluminum film for another device. It is found that the frequency noise of the device with two silicon nitride films is about 25% to 50% of the bare aluminum device. Using this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor designs. We investigate the noise properties of these devices at different microwave driven power and bath temperatures, and the experimental results show typical two-level system noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detector, and also paves the way to developing low-noise aluminum kinetic inductance detectors for terahertz imaging, photon-counting and energy-resolving applications.
The non-homogeneity in the critical temperature TcT_{c}Tc​ of an Microwave Kinetic Inductance Detector (MKID) could be caused by non-uniformity in the deposition process of the thin superconducting film. This produces low percent yield and frequency collision in the readout of the MKIDs. Here, we show the homogeneity that offers Atomic Layer Deposition (ALD). We report an improvement of up to a factor of 50 in the fractional variation of the TcT_{c}Tc​ for TiN MKIDs fabricated with Atomic Layer Deposition in comparison with MKIDs fabricated with sputtering. We measured the critical temperature of 48 resonators. We extracted the TcT_{c}Tc​ of the MKIDs by fitting the fractional resonance frequency to the complex conductivity of their resonators. We observed uniformity on the critical temperature for MKIDs belonging to the same fabrication process, with a maximum change in the TcT_{c}Tc​ of 60 mK for MKIDs fabricated on different wafers.