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Acta Physica Sinica

Noise spectrum analysis of superconducting kinetic inductance detectors

Zhongyu Shi, Xucheng Dai, Haoyu Wang, Zhan-Zhang Mai, P. H. Ouyang, Yi-Zhuo Wang, Ya-Qiang Chai, Lian-Fu Wei, Xuming Liu, Chang-Zhao Pan, Wei-Jie Guo, S. Shu, Yiwen Wang

Published Nov 9, 2023• 1 citation
Publisher

Abstract

As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detector is one of the key performance indicators. Herein a noise power spectrum analysis method is introduced in detail, which can accurately and effectively analyze the noise spectrum of kinetic inductance detector in a wide frequency range. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting the appropriate frequency resolutions for different frequency bands. This method is used to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micromachining processes. We deposite a 25-nm-thick aluminum film on high-resistivity silicon substrate for one device, while place one silicon nitride (SiNx) film on the top and one on the bottom of the aluminum film for another device. It is found that the frequency noise of the device with two silicon nitride films is about 25% to 50% of the bare aluminum device. Using this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor designs. We investigate the noise properties of these devices at different microwave driven power and bath temperatures, and the experimental results show typical two-level system noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detector, and also paves the way to developing low-noise aluminum kinetic inductance detectors for terahertz imaging, photon-counting and energy-resolving applications.

DOI
10.7498/aps.73.20231504

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As a newly developed pair-breaking superconducting detector, microwave kinetic inductance detectors are simple to integrate in the frequency domain and have already been used in astronomical detection and array imaging at the (sub)millimeter and optical wavelengths. For these applications, the dark noise level of kinetic inductance detector is one of the key performance indicators. Herein a noise power spectrum analysis method is introduced in detail, which can accurately and effectively analyze the noise spectrum of kinetic inductance detector in a wide frequency range. This method can well balance the noise spectrum resolution and variance performance, by taking the noise data at the resonance frequency with two sampling rates and setting the appropriate frequency resolutions for different frequency bands. This method is used to characterize and compare the noise of aluminum (Al) kinetic inductance detectors made from two different micromachining processes. We deposite a 25-nm-thick aluminum film on high-resistivity silicon substrate for one device, while place one silicon nitride (SiNx) film on the top and one on the bottom of the aluminum film for another device. It is found that the frequency noise of the device with two silicon nitride films is about 25% to 50% of the bare aluminum device. Using this double silicon nitride film fabrication technique, we further fabricate a few groups of lumped-element aluminum kinetic inductance detectors with various inductor and interdigitated capacitor designs. We investigate the noise properties of these devices at different microwave driven power and bath temperatures, and the experimental results show typical two-level system noise behaviors. Our work provides a standard method to characterize the noise power spectrum of kinetic inductor detector, and also paves the way to developing low-noise aluminum kinetic inductance detectors for terahertz imaging, photon-counting and energy-resolving applications.
The separation and optimization of noise components is critical to microwave-kinetic inductance detector (MKID) development. We analyze the effect of several changes to the lumped-element inductor and interdigitated capacitor geometry on the noise performance of a series of MKIDs intended for millimeter-wavelength experiments. We extract the contributions from two-level system noise in the dielectric layer, the generation-recombination noise intrinsic to the superconducting thin-film, and system white noise from each detector noise power spectrum and characterize how these noise components depend on detector geometry, material, and measurement conditions such as driving power and temperature. We observe a reduction in the amplitude of two-level system noise with both an elevated sample temperature and an increased gap between the fingers within the interdigitated capacitors for both aluminum and niobium detectors. We also verify the expected reduction of the generation-recombination noise and associated quasiparticle lifetime with reduced inductor volume. This study also iterates over different materials, including aluminum, niobium, and aluminum manganese, and compares the results with an underlying physical model.
Microwave kinetic inductance detectors (MKID) are superconducting broadband direct detectors. If a superconducting thin film patterned into a resonator is illuminated with photons, Cooper pairs break up and the kinetic inductance of the film changes. This shifts the resonance frequency downwards and the dissipation of the resonator increases, which can be detected in the phase and amplitude of a transmitted signal. \n \nIn this thesis, a waveguide coupled MKID is designed and simulated. 350 GHz radiation is coupled into a copper waveguide via a horn antenna. A waveguide probe leads the signal onto a 9 µm silicon membrane where it is absorbed in a 40 nm superconducting aluminum film which is the inductive part of a superconducting resonator. The capacitor of the resonator is made of niobium. Two versions of the device are developed, a transmission line resonator and a lumped element resonator design. The new design will enable an accurate understanding of the optical sensitivity of MKIDs and allow comparison of different resonator materials. Since two different resonator types are used, the direct comparison of transmission line and lumped resonators will also be possible. \n \nA measurement setup is developed including an ADR cryostat to cool MKID devices down to below 40 mK. An analog readout system using either a vector network analyzer or an IQ mixer is designed and built. The necessary software to control the ADR, the temperature monitoring, the readout signal generation and detection and the signal acquisition of the setup is also developed. \n \nThe waveguide coupled MKID design is fabricated in our in-house microfabrication laboratory and measured in the new setup. In my measurements, the devices do not show a resonance feature. The VNA and DC measurements are analyzed to determine a plausible hypothesis of the failure. The devices are diagnosed for critical issues during fabrication which will be addressed in a future iteration. \n \nTo verify the measurement setup, a test device of the IRAM NIKA 2 MKID camera is measured and the complete analysis pipeline is exercised. The quasi-particle lifetime in the aluminum thin films is measured and a dark and optical noise equivalent power are determined. The results are within the uncertainty comparable to measurements of IRAM themselves. \n \nA test chip designed in my master thesis that contains eight NbTiN resonators is measured in the new setup and non-linear effects under strong readout power are studied. Parametric amplification and oscillation of a resonator are shown qualitatively.
Microwave Kinetic Inductance Detectors (MKIDs), with high sensitivity and relatively simple frequency multiplexing, are emerging as a kind of large-array detectors in the terahertz (THz) band. An MKID, like a superconducting resonator, is composed of a planar capacitor and inductor that are made from superconducting films. The energy gap of the superconducting film for the planar inductor (at least part of it) is lower than the energy of photons to be detected. The kinetic inductance of the superconducting film irradiated by the photons is increased, shifting the resonance frequency toward a lower frequency. The frequency shift is proportional to the kinetic inductance fraction, i.e., the ratio of the kinetic inductance to the total inductance of the planar superconducting inductor. In this paper, we thoroughly investigate the kinetic inductance fraction for lumped-element and antenna-coupled MKIDs, which are both made from NbTiN. The detailed simulation, calculation, and measurement results will be presented.
Future far-infrared space observatories equipped with cryogenic telescopes require ultra-sensitive detectors to enable measurements limited only by the sky background. We present the design, fabrication, and characterization of a superconducting kinetic inductance detector (KID) at 4.3 THz. The lumped-element KID comprises a tantalum interdigitated capacitor and a 100-nm-wide aluminum-line inductor connected in parallel. The inductor acts also as a low-volume absorber. We achieved photon-noise-limited performance with a noise equivalent power of 1.9 × 10−19 W/Hz referenced to absorbed blackbody power at a modulation frequency of 300 Hz. Under optical loading above 1.83 fW, the detector remains stable with white-noise spectra extending down to ∼100 mHz.
Microwave Kinetic Inductance Detectors (MKIDs), just like a planar resonance cavity resonating at a microwave frequency, are emerging as a kind of high-sensitivity detector suitable for large format arrays at terahertz (THz) wavelengths. There are two types of MKIDs, namely distributed (or antenna-coupled) MKIDs and lumped-element MKIDs (aka LeKIDs). Various superconducting thin films (such as Al, TiN, NbTiN, NbN, and Nb) have been investigated for MKIDs. They do work so long as the detected photon energy exceeds their energy gap, but their response and noise behaviors are yet to be fully understood. Here we report on the design, fabrication, and characterization of distributed and lumped-element MKIDs made of NbTiN superconducting film. Detailed simulation and measurement results will be presented.
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature TcT_\mathrm{c}Tc​ , sheet resistance RsR_\mathrm{s}Rs​ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15 W/Hz\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}NEPopt​≈2.3×10−15 W/Hz​ , which is promising for passive terahertz imaging applications.