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arXiv:1911.06419

On the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition

Israel Hernandez, Martı́n Makler, Juan Estrada, Clécio R. Bom, D. Kubik, Julian Amette, Jorge Montes, Andrew Leptop

Published Nov 14, 2019• 2 citations
arXivHTMLPDF

Abstract

The non-homogeneity in the critical temperature $T_{c}$ of an Microwave Kinetic Inductance Detector (MKID) could be caused by non-uniformity in the deposition process of the thin superconducting film. This produces low percent yield and frequency collision in the readout of the MKIDs. Here, we show the homogeneity that offers Atomic Layer Deposition (ALD). We report an improvement of up to a factor of 50 in the fractional variation of the $T_{c}$ for TiN MKIDs fabricated with Atomic Layer Deposition in comparison with MKIDs fabricated with sputtering. We measured the critical temperature of 48 resonators. We extracted the $T_{c}$ of the MKIDs by fitting the fractional resonance frequency to the complex conductivity of their resonators. We observed uniformity on the critical temperature for MKIDs belonging to the same fabrication process, with a maximum change in the $T_{c}$ of 60 mK for MKIDs fabricated on different wafers.

DOI
10.48550/arxiv.1911.06419

Related papers

On the Efficiency $\eta$ and the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition

Israel Hernandez

Microwave Kinetic Inductance Detectors (MKIDs) belong to non-equilibrium superconducting devices. It is a new promising device due to high quantum efficiency, low theoretical noise limit, multiplex frequency domain, photon-number-resolving, and energy resolving. In the case of MKIDs, a change in the kinetic inductance is produced by the breaking of Cooper pairs, modifying the electrodynamic response of the superconductor. The production process of an MKID consists of depositing a superconducting thin film on an insulating substrate and applying standard lithographic patterning techniques to produce a resonator structure. When an MKID is produced via sputtering, film nonuniformity is observed, producing instability, low yield, frequency collisions, and low energy resolution. We exploring film uniformity in films produced with Atomic Layer Deposition (ALD) and through ALD archive high values in the energy resolution. The uniformity of ALD is evaluated via measurement of the critical temperature of 4 MKIDs. Two MKIDs belong to the first fabrication process and the other two to another. The results obtained are: ΔTc/max(σT1,σT2) is 0.45 for A1-B1 and 0.21 for A2-B2. The difference in the Tc for MKIDs of the same wafer is around 5.1 mK and from different wafers, the maximum difference is 66 mk with a minimum of 48 mK. However, with the high uniformity archived, we obtained a poor response of the MKIDs when a photon is absorbed. As a consequence of the low response, we examined in the literature about the process of photon absorption. In this evaluation, we were focusing on the down-conversion efficiency as a possible cause for the degraded energy resolution. In this process, one part of the initial energy of the photon is lost, transferred to the creation of quasiparticles and phonons. The phonons that do not possess enough energy to break a Cooper pair are lost from the system. This loss in energy is accounted for by the eff iciency η which has a constant value reported as 0.57 (! from simulation). Due to the efficiency had been reported always as constant. We proceed to evaluate its value through a new method. The process consists of measuring the gain of the system via the photon transfer curve and thermal calibration. The efficiency obtained with this new method is of 0.008 which has a lower value in comparison with the simulation. The methods to obtain the critical temperature, as well as the new method to evaluate the efficiency of an MKID will be shown in this work.

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Design and measurement of superconducting microwave kinetic inductance detectors

Florian Blauth

Microwave kinetic inductance detectors (MKID) are superconducting broadband direct detectors. If a superconducting thin film patterned into a resonator is illuminated with photons, Cooper pairs break up and the kinetic inductance of the film changes. This shifts the resonance frequency downwards and the dissipation of the resonator increases, which can be detected in the phase and amplitude of a transmitted signal. \n \nIn this thesis, a waveguide coupled MKID is designed and simulated. 350 GHz radiation is coupled into a copper waveguide via a horn antenna. A waveguide probe leads the signal onto a 9 µm silicon membrane where it is absorbed in a 40 nm superconducting aluminum film which is the inductive part of a superconducting resonator. The capacitor of the resonator is made of niobium. Two versions of the device are developed, a transmission line resonator and a lumped element resonator design. The new design will enable an accurate understanding of the optical sensitivity of MKIDs and allow comparison of different resonator materials. Since two different resonator types are used, the direct comparison of transmission line and lumped resonators will also be possible. \n \nA measurement setup is developed including an ADR cryostat to cool MKID devices down to below 40 mK. An analog readout system using either a vector network analyzer or an IQ mixer is designed and built. The necessary software to control the ADR, the temperature monitoring, the readout signal generation and detection and the signal acquisition of the setup is also developed. \n \nThe waveguide coupled MKID design is fabricated in our in-house microfabrication laboratory and measured in the new setup. In my measurements, the devices do not show a resonance feature. The VNA and DC measurements are analyzed to determine a plausible hypothesis of the failure. The devices are diagnosed for critical issues during fabrication which will be addressed in a future iteration. \n \nTo verify the measurement setup, a test device of the IRAM NIKA 2 MKID camera is measured and the complete analysis pipeline is exercised. The quasi-particle lifetime in the aluminum thin films is measured and a dark and optical noise equivalent power are determined. The results are within the uncertainty comparable to measurements of IRAM themselves. \n \nA test chip designed in my master thesis that contains eight NbTiN resonators is measured in the new setup and non-linear effects under strong readout power are studied. Parametric amplification and oscillation of a resonator are shown qualitatively.

•Oct 1, 2019•0 citations
The non-homogeneity in the critical temperature TcT_{c}Tc​ of an Microwave Kinetic Inductance Detector (MKID) could be caused by non-uniformity in the deposition process of the thin superconducting film. This produces low percent yield and frequency collision in the readout of the MKIDs. Here, we show the homogeneity that offers Atomic Layer Deposition (ALD). We report an improvement of up to a factor of 50 in the fractional variation of the TcT_{c}Tc​ for TiN MKIDs fabricated with Atomic Layer Deposition in comparison with MKIDs fabricated with sputtering. We measured the critical temperature of 48 resonators. We extracted the TcT_{c}Tc​ of the MKIDs by fitting the fractional resonance frequency to the complex conductivity of their resonators. We observed uniformity on the critical temperature for MKIDs belonging to the same fabrication process, with a maximum change in the TcT_{c}Tc​ of 60 mK for MKIDs fabricated on different wafers.
On the Efficiency η\etaη and the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition
Microwave Kinetic Inductance Detectors (MKIDs) belong to non-equilibrium superconducting devices. It is a new promising device due to high quantum efficiency, low theoretical noise limit, multiplex frequency domain, photon-number-resolving, and energy resolving. In the case of MKIDs, a change in the kinetic inductance is produced by the breaking of Cooper pairs, modifying the electrodynamic response of the superconductor. The production process of an MKID consists of depositing a superconducting thin film on an insulating substrate and applying standard lithographic patterning techniques to produce a resonator structure. When an MKID is produced via sputtering, film nonuniformity is observed, producing instability, low yield, frequency collisions, and low energy resolution. We exploring film uniformity in films produced with Atomic Layer Deposition (ALD) and through ALD archive high values in the energy resolution. The uniformity of ALD is evaluated via measurement of the critical temperature of 4 MKIDs. Two MKIDs belong to the first fabrication process and the other two to another. The results obtained are: ΔTc/max(σT1,σT2) is 0.45 for A1-B1 and 0.21 for A2-B2. The difference in the Tc for MKIDs of the same wafer is around 5.1 mK and from different wafers, the maximum difference is 66 mk with a minimum of 48 mK. However, with the high uniformity archived, we obtained a poor response of the MKIDs when a photon is absorbed. As a consequence of the low response, we examined in the literature about the process of photon absorption. In this evaluation, we were focusing on the down-conversion efficiency as a possible cause for the degraded energy resolution. In this process, one part of the initial energy of the photon is lost, transferred to the creation of quasiparticles and phonons. The phonons that do not possess enough energy to break a Cooper pair are lost from the system. This loss in energy is accounted for by the eff iciency η which has a constant value reported as 0.57 (! from simulation). Due to the efficiency had been reported always as constant. We proceed to evaluate its value through a new method. The process consists of measuring the gain of the system via the photon transfer curve and thermal calibration. The efficiency obtained with this new method is of 0.008 which has a lower value in comparison with the simulation. The methods to obtain the critical temperature, as well as the new method to evaluate the efficiency of an MKID will be shown in this work.
We report on the investigation of titanium nitride (TiN) thin films deposited via atomic layer deposition (ALD) for microwave kinetic inductance detectors (MKID). Using our in-house ALD process, we have grown a sequence of TiN thin films (thickness 15, 30, 60 nm). The films have been characterised in terms of superconducting transition temperature TcT_\mathrm{c}Tc​ , sheet resistance RsR_\mathrm{s}Rs​ and microstructure. We have fabricated test resonator structures and characterised them at a temperature of 300 mK. At 350 GHz, we report an optical noise equivalent power NEPopt≈2.3×10−15 W/Hz\hbox {NEP}_\mathrm{opt} \approx 2.3\times 10^{-15}~\hbox {W}/\sqrt{\hbox {Hz}}NEPopt​≈2.3×10−15 W/Hz​ , which is promising for passive terahertz imaging applications.
Abstract Microwave Kinetic Inductance Detectors (MKIDs) combine significant advantages for photon detection like single photon counting, single pixel energy resolution, vanishing dark counts and µs time resolution with a simple design and the feasibility to scale up into the megapixel range. But high quality MKID fabrication remains challenging as established superconductors tend to either have intrinsic disadvantages, are challenging to deposit or require very low operating temperatures. As alternating stacks of thin Ti and TiN films have shown very impressive results for far-IR and sub-mm MKIDs, they promise significant improvements for UV, visible to near-IR MKIDs as well, especially as they are comparably easy to fabricate and control. In this paper, we present our ongoing project to adapt proximity coupled superconducting films for photon counting MKIDs. Some of the main advantages of Ti/TiN multilayers are their good control of critical temperature (Tc) and their great homogeneity of Tc even over large wafers, promising improved pixel yield especially for large arrays. We demonstrate the effect different temperatures during fabrication have on the detector performance and discuss excess phase noise observed caused by surface oxidization of exposed Si. Our first prototypes achieved photon energy resolving powers of up to 3.1 but turned out to be much too insensitive. As the work presented is still in progress, we also discuss further improvements planned for the near future.
We report on the development of microwave kinetic inductance detectors (MKIDs) using platinum silicide as the sensor material. MKIDs are an emerging superconducting detector technology, capable of measuring the arrival times of single photons to better than two microseconds and their energies to around ten percent. Previously, MKIDs have been fabricated using either sub-stoichiometric titanium nitride or aluminum, but TiN suffers from the spatial inhomogeneities in the superconducting critical temperature and Al has a low kinetic inductance fraction, causing low detector sensitivity. To address these issues, we have instead fabricated the PtSi microresonators with the superconducting critical temperatures of 944 ± 12 mK and high internal quality factors (Qi≳106). These devices show typical quasiparticle lifetimes of τqp≈30–40 μs and spectral resolution, R=λ/Δλ, of 8 at 406.6 nm. We compare PtSi MKIDs to those fabricated with TiN and detail the substantial advantages that PtSi MKIDs have to offer.
We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, TC, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible TC’s are obtained from 0.8 to 2.5 K. These films had high resistivities, >100μΩ cm, and internal quality factors for resonators in the GHz range, on the order of 100 k and higher. Trilayers of both TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a well controlled process for films over a wide thickness range. Detectors were fabricated and shown to have single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and potentially other applications such as nanowire detectors, transition edge sensors, and associated quantum information applications.
Microwave kinetic inductance detectors (MKID) are superconducting broadband direct detectors. If a superconducting thin film patterned into a resonator is illuminated with photons, Cooper pairs break up and the kinetic inductance of the film changes. This shifts the resonance frequency downwards and the dissipation of the resonator increases, which can be detected in the phase and amplitude of a transmitted signal. \n \nIn this thesis, a waveguide coupled MKID is designed and simulated. 350 GHz radiation is coupled into a copper waveguide via a horn antenna. A waveguide probe leads the signal onto a 9 µm silicon membrane where it is absorbed in a 40 nm superconducting aluminum film which is the inductive part of a superconducting resonator. The capacitor of the resonator is made of niobium. Two versions of the device are developed, a transmission line resonator and a lumped element resonator design. The new design will enable an accurate understanding of the optical sensitivity of MKIDs and allow comparison of different resonator materials. Since two different resonator types are used, the direct comparison of transmission line and lumped resonators will also be possible. \n \nA measurement setup is developed including an ADR cryostat to cool MKID devices down to below 40 mK. An analog readout system using either a vector network analyzer or an IQ mixer is designed and built. The necessary software to control the ADR, the temperature monitoring, the readout signal generation and detection and the signal acquisition of the setup is also developed. \n \nThe waveguide coupled MKID design is fabricated in our in-house microfabrication laboratory and measured in the new setup. In my measurements, the devices do not show a resonance feature. The VNA and DC measurements are analyzed to determine a plausible hypothesis of the failure. The devices are diagnosed for critical issues during fabrication which will be addressed in a future iteration. \n \nTo verify the measurement setup, a test device of the IRAM NIKA 2 MKID camera is measured and the complete analysis pipeline is exercised. The quasi-particle lifetime in the aluminum thin films is measured and a dark and optical noise equivalent power are determined. The results are within the uncertainty comparable to measurements of IRAM themselves. \n \nA test chip designed in my master thesis that contains eight NbTiN resonators is measured in the new setup and non-linear effects under strong readout power are studied. Parametric amplification and oscillation of a resonator are shown qualitatively.