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Journal of Low Temperature Physics

Optimizing Ti/TiN Multilayers for UV, Optical and Near-IR Microwave Kinetic Inductance Detectors

Gerhard Ulbricht, Mario de Lucia, Jack Piercy, Oisín Creaner, Colm P. Bracken, Cáthal McAleer, T. P. Ray

Published May 15, 2024• 1 citation
Publisher

Abstract

Abstract Microwave Kinetic Inductance Detectors (MKIDs) combine significant advantages for photon detection like single photon counting, single pixel energy resolution, vanishing dark counts and µs time resolution with a simple design and the feasibility to scale up into the megapixel range. But high quality MKID fabrication remains challenging as established superconductors tend to either have intrinsic disadvantages, are challenging to deposit or require very low operating temperatures. As alternating stacks of thin Ti and TiN films have shown very impressive results for far-IR and sub-mm MKIDs, they promise significant improvements for UV, visible to near-IR MKIDs as well, especially as they are comparably easy to fabricate and control. In this paper, we present our ongoing project to adapt proximity coupled superconducting films for photon counting MKIDs. Some of the main advantages of Ti/TiN multilayers are their good control of critical temperature (Tc) and their great homogeneity of Tc even over large wafers, promising improved pixel yield especially for large arrays. We demonstrate the effect different temperatures during fabrication have on the detector performance and discuss excess phase noise observed caused by surface oxidization of exposed Si. Our first prototypes achieved photon energy resolving powers of up to 3.1 but turned out to be much too insensitive. As the work presented is still in progress, we also discuss further improvements planned for the near future.

DOI
10.1007/s10909-024-03121-1

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Abstract Microwave Kinetic Inductance Detectors (MKIDs) combine significant advantages for photon detection like single photon counting, single pixel energy resolution, vanishing dark counts and µs time resolution with a simple design and the feasibility to scale up into the megapixel range. But high quality MKID fabrication remains challenging as established superconductors tend to either have intrinsic disadvantages, are challenging to deposit or require very low operating temperatures. As alternating stacks of thin Ti and TiN films have shown very impressive results for far-IR and sub-mm MKIDs, they promise significant improvements for UV, visible to near-IR MKIDs as well, especially as they are comparably easy to fabricate and control. In this paper, we present our ongoing project to adapt proximity coupled superconducting films for photon counting MKIDs. Some of the main advantages of Ti/TiN multilayers are their good control of critical temperature (Tc) and their great homogeneity of Tc even over large wafers, promising improved pixel yield especially for large arrays. We demonstrate the effect different temperatures during fabrication have on the detector performance and discuss excess phase noise observed caused by surface oxidization of exposed Si. Our first prototypes achieved photon energy resolving powers of up to 3.1 but turned out to be much too insensitive. As the work presented is still in progress, we also discuss further improvements planned for the near future.
We demonstrate photon counting at 1550 nm wavelength using microwave kinetic inductance detectors (MKIDs) made from TiN/Ti/TiN trilayer films with superconducting transition temperature Tc≈ 1.4 K. The detectors have a lumped-element design with a large interdigitated capacitor covered by aluminum and inductive photon absorbers whose volume ranges from 0.4 μm3 to 20 μm3. The energy resolution improves as the absorber volume is reduced. We achieved an energy resolution of 0.22 eV and resolved up to 7 photons per optical pulse, both greatly improved from previously reported results at 1550 nm wavelength using MKIDs. Further improvements are possible by optimizing the optical coupling to maximize photon absorption into the inductive absorber.
We apply the superconducting proximity effect in TiN/Ti multi-layer films to tune the critical temperature, TC, to within 10 mK with high uniformity (less than 15 mK spread) across a 75 mm wafer. Reproducible TC’s are obtained from 0.8 to 2.5 K. These films had high resistivities, >100μΩ cm, and internal quality factors for resonators in the GHz range, on the order of 100 k and higher. Trilayers of both TiN/Ti/TiN and thicker superlattice films were prepared, demonstrating a well controlled process for films over a wide thickness range. Detectors were fabricated and shown to have single photon resolution at 1550 nm. The high uniformity and controllability coupled with the high quality factor, kinetic inductance, and inertness of TiN make these films ideal for use in frequency multiplexed kinetic inductance detectors and potentially other applications such as nanowire detectors, transition edge sensors, and associated quantum information applications.
Abstract We report on the experimental investigation of optical coupling for superconducting microresonators known as microwave kinetic inductance detectors (MKIDs) in the visible and near-infrared bands. MKIDs are photon-counting, time and energy-resolving detectors that still suffer from a poor quantum efficiency. To improve this efficiency, we propose to add a superconducting reflective layer below the absorbing part of the detector separated by a transparent Al2O3 layer with a quarter-wavelength thickness optimized around a single wavelength λ = 405 nm. We have first fabricated samples patterned from stoichiometric TiN ( T c ∼ 4 K), one with the full optical stack, one without for reference and one with a partial optical stack in order to characterize the noise influence of each layer individually. We observe that the full optical stack geometry has the most impact on the resonator’s noise and quality factors. A second design was fabricated to characterize the optical response to short pulses of the optical stack and we show from both the frequential noise and optical response that a strong signature of TLS is still present in the optical stack sample. We have finally obtained single-photon response with the optical stack using a more sensitive tri-layer TiN/Ti/TiN absorber ( T c ∼ 1.3 K) for which a maximum energy resolving power of R = E / Δ E ∼ 1.3 was achieved using 405 nm laser pulses at 225 mK. The quality factors of both the reference and optical stack samples are similar but the frequency noise is still a tenfold higher for the optical stack sample which degrades the energy-resolving power of the detector.
We have fabricated 2024 pixel microwave kinetic inductance detector (MKID) arrays in the ultraviolet/optical/ near-IR (UVOIR) regime that are currently in use in astronomical instruments. In order to make MKIDs desirable for novel instruments, larger arrays with nearly perfect yield need to be fabricated. As array size increases, however, the percent yield often decreases due to frequency collisions in the readout. The per-pixel performance must also be improved, namely, the energy resolution. We are investigating ways to reduce frequency collisions and to improve the per-pixel performance of our devices through new superconducting material systems and fabrication techniques. There are two main routes that we are currently exploring. First, we are attempting to create more uniform titanium nitride films through the use of atomic layer deposition rather than the more traditional sputtering method. In addition, we are experimenting with completely new material systems for MKIDs, such as platinum silicide.
On the Efficiency η\etaη and the Homogeneity of TiN Kinetic Inductance Detectors Produced through Atomic Layer Deposition
Microwave Kinetic Inductance Detectors (MKIDs) belong to non-equilibrium superconducting devices. It is a new promising device due to high quantum efficiency, low theoretical noise limit, multiplex frequency domain, photon-number-resolving, and energy resolving. In the case of MKIDs, a change in the kinetic inductance is produced by the breaking of Cooper pairs, modifying the electrodynamic response of the superconductor. The production process of an MKID consists of depositing a superconducting thin film on an insulating substrate and applying standard lithographic patterning techniques to produce a resonator structure. When an MKID is produced via sputtering, film nonuniformity is observed, producing instability, low yield, frequency collisions, and low energy resolution. We exploring film uniformity in films produced with Atomic Layer Deposition (ALD) and through ALD archive high values in the energy resolution. The uniformity of ALD is evaluated via measurement of the critical temperature of 4 MKIDs. Two MKIDs belong to the first fabrication process and the other two to another. The results obtained are: ΔTc/max(σT1,σT2) is 0.45 for A1-B1 and 0.21 for A2-B2. The difference in the Tc for MKIDs of the same wafer is around 5.1 mK and from different wafers, the maximum difference is 66 mk with a minimum of 48 mK. However, with the high uniformity archived, we obtained a poor response of the MKIDs when a photon is absorbed. As a consequence of the low response, we examined in the literature about the process of photon absorption. In this evaluation, we were focusing on the down-conversion efficiency as a possible cause for the degraded energy resolution. In this process, one part of the initial energy of the photon is lost, transferred to the creation of quasiparticles and phonons. The phonons that do not possess enough energy to break a Cooper pair are lost from the system. This loss in energy is accounted for by the eff iciency η which has a constant value reported as 0.57 (! from simulation). Due to the efficiency had been reported always as constant. We proceed to evaluate its value through a new method. The process consists of measuring the gain of the system via the photon transfer curve and thermal calibration. The efficiency obtained with this new method is of 0.008 which has a lower value in comparison with the simulation. The methods to obtain the critical temperature, as well as the new method to evaluate the efficiency of an MKID will be shown in this work.
We report on the design and performance of microwave kinetic inductance detectors (MKIDs) sensitive to single photons in the optical to near-infrared range using hafnium as the sensor material. Our test device had a superconducting transition temperature of 395 mK and a room temperature normal state resistivity of 97 μΩ cm with RRR=1.6. Resonators on the device displayed internal quality factors of around 200 000. Similar to the analysis of MKIDs made from other highly resistive superconductors, we find that modeling the temperature response of the detector requires an extra broadening parameter in the superconducting density of states. Finally, we show that this material and design is compatible with a full-array fabrication process, which resulted in pixels with decay times of about 40 μs and resolving powers of ∼9 at 800 nm.