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arXiv:cond-mat/0703324

The Resonant Light Absorption by Semiconductor Quantum Dots

I. G. Lang, L. I. Korovin, S. T. Pavlov

Published Mar 13, 2007• 0 citations
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Abstract

The cross section of light absorption by semiconductor quantum dots in the case of the resonance with excitons $Γ_6 \times Γ_7$ in cubical crystals $T_d$ is calculated. It is shown that an interference of stimulating and induced electric and magnetic fields must be taken into account. The absorption section is proportional to the exciton nonradiative damping $γ$.

DOI
10.48550/arxiv.cond-mat/0703324

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The cross section of light absorption by semiconductor quantum dots in the case of the resonance with excitons Γ6×Γ7Γ_6 \times Γ_7Γ6​×Γ7​ in cubical crystals TdT_dTd​ is calculated. It is shown that an interference of stimulating and induced electric and magnetic fields must be taken into account. The absorption section is proportional to the exciton nonradiative damping γγγ.
The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.
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