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Advances in Condensed Matter Physics

Resonant Light Absorption by Semiconductor Quantum Dots

I. G. Lang, S. T. Pavlov

Published Jan 1, 2009• 2 citations
Publisher

Abstract

The cross-section of light absorption by size-quantized semiconductor quantum dots (QD) is calculated in the case of a resonance with an exciton in cubical crystals of class. The interference of stimulating and induced electric and magnetic fields is taken into account. The cross-section of light absorption is proportional to the exciton nonradiative damping .

DOI
10.1155/2009/654190

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International Journal of Nanoscience•Aug 1, 2011•1 citation
The cross-section of light absorption by size-quantized semiconductor quantum dots (QD) is calculated in the case of a resonance with an exciton in cubical crystals of class. The interference of stimulating and induced electric and magnetic fields is taken into account. The cross-section of light absorption is proportional to the exciton nonradiative damping .
The cross section of light absorption by semiconductor quantum dots in the case of the resonance with excitons Γ6×Γ7Γ_6 \times Γ_7Γ6​×Γ7​ in cubical crystals TdT_dTd​ is calculated. It is shown that an interference of stimulating and induced electric and magnetic fields must be taken into account. The absorption section is proportional to the exciton nonradiative damping γγγ.
Density matrix approach has been employed to analyze the pump-probe spectroscopic absorption spectra of small semiconductor quantum dots (QDs) under strong confinement regime with sizes smaller than the bulk exciton Bohr radius such that the Coulombic interaction energy becomes negligible in comparison to the confinement energy. The average time rate of absorption has been obtained by incorporating the radiative and nonradiative decay processes as well as the inhomogeneous broadening arising due to nonuniform QD sizes. The analytical results are obtained for QDs duly irradiated by a strong near resonant pump and broadband weak probe. Numerical estimations have been made for (1) isolated QDs and (2) QD-arrays of GaAs and CdS. The results agree very well with the available experimental observations in CdS QDs. The results in case of GaAs QDs can lead one to experimentally estimate absorption/gain spectra in the important III-V semiconducting mesoscopic structures.
Transient optical nonlinearities of semiconductor quantum dots in the strongly confined regime are studied, in which the exciton, biexciton and magnetic field effects are taken into account. The photo induced band-to-band electronic transitions are considered from both the heavy-hole (hh) and light-hole (lh) valence bands to the lowest (1s) exciton state below the fundamental absorption edge. The time dependent perturbation technique for a three-level system, under the near band gap resonant excitation regime, has been employed; with the incorporation of the relaxation and dephasing mechanisms phenomenologically. The induced polarization is calculated from where the real and imaginary parts of the third-order nonlinear optical susceptibility, responsible for the occurrence of nonlinear refraction and nonlinear absorption respectively, have been derived. The temporal and detuning spectra of nonlinear refraction and absorption; and their dependence on density of biexcitons and a moderately strong magnetic field, have been analyzed. It is observed that the nonlinear refraction and nonlinear absorption enhance with increasing magnetic field in small CdS quantum dots.