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arXiv:cond-mat/0411399 · Applied Physics Letters

Direct measurement of the intrinsic RC roll-off in a radio frequency single electron transistor operated as a microwave mixer

D. J. Reilly, Tilo M. Buehler

Published Oct 13, 2005• 6 citations
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Abstract

By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequencies. Our technique makes use of the nonlinear rf-SET transconductance to mix high frequency gate signals and produce difference-frequency components that fall within the bandwidth of the rf-SET. At gate frequencies >15GHz the induced charge on the rf-SET island is altered on time scales faster than the inverse tunnel rate, preventing mixer operation. We suggest the possibility of utilizing this technique to sense high frequency signals beyond the usual rf-SET bandwidth.

DOI
10.1063/1.2093929

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By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequencies. Our technique makes use of the nonlinear rf-SET transconductance to mix high frequency gate signals and produce difference-frequency components that fall within the bandwidth of the rf-SET. At gate frequencies >15GHz the induced charge on the rf-SET island is altered on time scales faster than the inverse tunnel rate, preventing mixer operation. We suggest the possibility of utilizing this technique to sense high frequency signals beyond the usual rf-SET bandwidth.
By configuring a radio frequency single-electron transistor as a mixer, we demonstrate a unique implementation of this device, that achieves good charge sensitivity with large bandwidth about a tunable center frequency. In our implementation we achieve a measurement bandwidth of 16 MHz, with a tunable center frequency from 0 to 1.2 GHz, demonstrated with the transistor operating at 300 mK. Ultimately this device is limited in center frequency by the RC time of the transistor’s center island, which for our device is ∼1.6GHz, close to the measured value. The measurement bandwidth is determined by the quality factor of the readout tank circuit.
We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3microe/sqrt[Hz] and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.
The radio-frequency single-electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1∕f and telegraph charge noise. For a typical spectrum of 1∕f noise we find that high fidelity, single-shot measurements are possible for signals Δq>0.01e. For the case of telegraph noise, we present a cross-correlation measurement technique that uses two rf-SETs to suppress the effect of random switching events on readout. We demonstrate this technique by monitoring the charge state of a metal double dot system on microsecond time scales. Such a scheme will be advantageous in achieving high readout fidelity in a solid-state quantum computer.
We present results on a double-island single-electron transistor (DISET) operated at radio frequency (rf) for the fast and highly sensitive detection of charge motion in the solid state. Using an intuitive definition for the charge sensitivity, we compare a DISET to a conventional single-electron transistor (SET). We find that a DISET can be more sensitive than a SET for identical, minimum device resistances in the Coulomb blockade regime. This is of particular importance for rf operation, where ideal impedance matching to 50-Ω transmission lines is only possible for a limited range of device resistances. We report a charge sensitivity of 5.6×10−6e∕Hz for a rf-DISET, together with a demonstration of the single-shot detection of small (⩽0.1e) charge signals on microsecond time scales.
We measure the charge sensitivity, Se, of a single electron transistor (SET) in the presence of strong (Vrf ∼ e/Cg) spurious radio frequency (rf) signals at frequencies up to 50 MHz, where Cg is the gate capacitance. Although Se appears to degrade when exposed to Vrf, we find that broadening of conduction peaks is largely due to the measurement technique and show that Se is maintained even with strong Vrf present. We show cancellation of a known Vrf signal at 1 MHz, demonstrating that a stable bias point in the presence of rf signals is possible.
We describe fabrication and measurements of Single Electron Transistors operated in the Radio Frequency mode (RF-SET). We demonstrate very high sensitivity for RF-SETs and we evaluate the back-action from an RF-SET, when used as a read-out device for charge qubits. We conclude that single-shot read-out is possible with a signal to noise ratio greater than one, and that niobium qubits would substantially improve the signal to noise ratio. Furthermore we describe how the RF-SET could be used to read out a differential qubit in a gradiometer coupling.