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arXiv:cond-mat/0410728 · Physical Review Letters

One-Dimensional Multiband Correlated Conductors and Anderson Impurity Physics

Michele Fabrizio, Erio Tosatti

Published Mar 18, 2005• 5 citations
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Abstract

A single Anderson impurity model recently predicted, through its unstable fixed point, the phase diagram of a two-band model correlated conductor, well confirmed by dynamical mean-field theory in infinite dimensions. We study here the one-dimensional version of the same model and extract its phase diagram in the opposite limit of reduced dimensionality. As expected for one dimension, the Mott metal-insulator transition at half filling is replaced by a dimerized insulator-undimerized Mott insulator transition, while away from half filling the strongly correlated superconductivity for inverted Hund's rule exchange in infinite dimensions is replaced by dominant pairing fluctuations. Many other aspects of the one-dimensional system, in particular, the field theories and their symmetries, are remarkably the same as those of the Anderson impurity, whose importance appears enhanced.

DOI
10.1103/physrevlett.94.106403

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We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction UUU reaches a critical value UcU_cUc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value Uc{\mathit{U}}_{\mathit{c}}Uc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one-dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
Near a Mott transition, strong electron correlations may enhance Cooper pairing. This is demonstrated in the dynamical mean field theory solution of a twofold-orbital degenerate Hubbard model with an inverted on-site Hund rule exchange, favoring local spin-singlet configurations. Close to the Mott insulator (which here is a local version of a valence bond insulator) a pseudogap non-Fermi-liquid metal, a superconductor, and a normal metal appear, in striking similarity with the physics of cuprates. The strongly correlated s-wave superconducting state has a larger Drude weight than the corresponding normal state. The role of the impurity Kondo problem is underscored.
The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition.
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength UUU, temperature TTT, and filling nnn shows that, upon increasing nnn toward the Mott insulator, there is a surface of first-order transition between two metals at nonzero doping. That surface ends at a finite temperature critical line originating at the half-filled Mott critical point. Associated with this transition, there is a maximum in scattering rate as well as thermodynamic signatures. These findings suggest a new scenario for the normal-state phase diagram of the high temperature superconductors. The criticality surmised in these systems can originate not from a T === 0 quantum critical point, nor from the proximity of a long-range ordered phase, but from a low temperature transition between two types of metals at finite doping. The influence of Mott physics therefore extends well beyond half-filling.