Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical review. B, Condensed matter

Phase diagram of the two-dimensional Anderson-Hubbard model

Jaichul Yi, Lizeng Zhang, Geoffrey Canright

Published Jun 1, 1994• 9 citations
Publisher

Abstract

We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value ${\mathit{U}}_{\mathit{c}}$. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one-dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.

DOI
10.1103/physrevb.49.15920

Related papers

Phase Diagram of the Two-Dimensional Anderson-Hubbard Model

Jaichul Yi Lizeng Zhang, Geoffrey Canright

We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction $U$ reaches a critical value $U_c$. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.

arXiv:cond-mat/9403002•Mar 1, 1994•0 citations

The Mott-Anderson transition in the disordered one-dimensional Hubbard model

Ramesh V. Pai, Alexander Punnoose, Rudolf A. Römer

We use the density matrix renormalization group to study the quantum transitions that occur in the half-filled one-dimensional fermionic Hubbard model with onsite potential disorder. We find a transition from the gapped Mott phase with algebraic spin correlations to a gapless spin-disordered phase beyond a critical strength of the disorder $Δ_c \approx U/2$. Both the transitions in the charge and spin sectors are shown to be coincident. We also establish the finite-size corrections to the charge gap and the spin-spin correlation length in the presence of disorder and using a finite-size-scaling analysis we obtain the zero temperature phase diagram of the various quantum phase transitions that occur in the disorder-interaction plane.

arXiv:cond-mat/9704027•Apr 3, 1997•1 citation

Ground-state properties of the disordered Hubbard model in two dimensions

M. Pezzoli, Federico Becca

We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed description of our improved variational state and explain how the physics of the Anderson-Mott transition can be inferred from equal-time correlations functions, which can be easily computed within the variational Monte Carlo scheme. The ground-state phase diagram is worked out in both the paramagnetic and the magnetic sector. Whereas in the former a direct second-order Anderson-Mott transition is obtained, when magnetism is allowed variationally, we find evidence for the formation of local magnetic moments that order before the Mott transition. Although the localization length increases before the Mott transition, we have no evidence for the stabilization of a true metallic phase. The effect of a frustrating next-nearest-neighbor hopping ${t}^{\ensuremath{'}}$ is also studied in some detail. In particular, we show that ${t}^{\ensuremath{'}}$ has two primary effects. The first one is the narrowing of the stability region of the magnetic Anderson insulator, also leading to a first-order magnetic transition. The second and most important effect of a frustrating hopping term is the development of a ``glassy'' phase at strong couplings, where many paramagnetic states, with disordered local moments, may be stabilized.

arXiv:0906.4870•Physical Review B•Feb 5, 2010•26 citations

Phase diagram of the half-filled Hubbard chain with next-nearest-neighbor hopping

S. Daul, R. M. Noack

We investigate the ground-state phase diagram of the half-filled one-dimensional Hubbard model with next-nearest-neighbor hopping using the density-matrix renormalization-group technique as well as an unrestricted Hartree-Fock approximation. We find commensurate and incommensurate disordered magnetic insulating phases and a spin-gapped metallic phase in addition to the one-dimensional Heisenberg phase. At large on-site Coulomb repulsion U, we make contact with the phase diagram of the frustrated Heisenberg chain, which has spin-gapped phases for sufficiently large frustration. For weak U, sufficiently large next-nearest-neighbor hopping ${t}_{2}$ leads to a band structure with four Fermi points rather than two, producing a spin-gapped metallic phase. As U is increased in this regime, the system undergoes a Mott-Hubbard transition to a frustrated antiferromagnetic insulator.

arXiv:cond-mat/9907256•Physical review. B, Condensed matter•Jan 15, 2000•53 citations

Scaling theory for Mott–Hubbard transitions: I. T = 0 phase diagram of the 1/2-filled Hubbard model

Anirban Mukherjee, Siddhartha Lal

Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.

New Journal of Physics•Apr 9, 2020•17 citations

Nature of the insulating phases in the half-filled ionic Hubbard model

A. P. Kampf, Michael Sekania, G. I. Japaridze +1 more

We investigate the ground-state phase diagram of the one-dimensional 'ionic' Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix renormalization group methods. We identify an insulator–insulator phase transition from a band to a correlated insulator with simultaneous charge and bond-charge order. The transition point is characterized by the vanishing of the optical excitation gap while simultaneously the charge and spin gaps remain finite and equal. Indications for a possible second transition into a Mott-insulator phase are discussed.

arXiv:cond-mat/0304697•Journal of Physics Condensed Matter•Aug 15, 2003•76 citations
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction U reaches a critical value Uc{\mathit{U}}_{\mathit{c}}Uc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one-dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
We study the ground state of the two-dimensional Anderson-Hubbard model using a quantum real space renormalization group method. We obtain the phase diagram near half filling. The system is always insulating with disorder. At half filling, the system undergoes a transition from a gapless (Anderson) insulator to an incompressible (Mott-Hubbard) insulator as the interaction UUU reaches a critical value UcU_cUc​. Away from half filling, the insulating phase is always gapless and is found to be controlled by the Anderson fixed point at half filling. This result is similar to that obtained in the corresponding one dimensional system and suggests strongly the importance of the electron-electron correlation in this gapless insulating phase.
We use the density matrix renormalization group to study the quantum transitions that occur in the half-filled one-dimensional fermionic Hubbard model with onsite potential disorder. We find a transition from the gapped Mott phase with algebraic spin correlations to a gapless spin-disordered phase beyond a critical strength of the disorder Δc≈U/2Δ_c \approx U/2Δc​≈U/2. Both the transitions in the charge and spin sectors are shown to be coincident. We also establish the finite-size corrections to the charge gap and the spin-spin correlation length in the presence of disorder and using a finite-size-scaling analysis we obtain the zero temperature phase diagram of the various quantum phase transitions that occur in the disorder-interaction plane.
We study the interplay between electron correlation and disorder in the two-dimensional Hubbard model at half filling by means of a variational wave function that can interpolate between Anderson and Mott insulators. We give a detailed description of our improved variational state and explain how the physics of the Anderson-Mott transition can be inferred from equal-time correlations functions, which can be easily computed within the variational Monte Carlo scheme. The ground-state phase diagram is worked out in both the paramagnetic and the magnetic sector. Whereas in the former a direct second-order Anderson-Mott transition is obtained, when magnetism is allowed variationally, we find evidence for the formation of local magnetic moments that order before the Mott transition. Although the localization length increases before the Mott transition, we have no evidence for the stabilization of a true metallic phase. The effect of a frustrating next-nearest-neighbor hopping ${t}^{\ensuremath{'}}$ is also studied in some detail. In particular, we show that ${t}^{\ensuremath{'}}$ has two primary effects. The first one is the narrowing of the stability region of the magnetic Anderson insulator, also leading to a first-order magnetic transition. The second and most important effect of a frustrating hopping term is the development of a ``glassy'' phase at strong couplings, where many paramagnetic states, with disordered local moments, may be stabilized.
We investigate the ground-state phase diagram of the half-filled one-dimensional Hubbard model with next-nearest-neighbor hopping using the density-matrix renormalization-group technique as well as an unrestricted Hartree-Fock approximation. We find commensurate and incommensurate disordered magnetic insulating phases and a spin-gapped metallic phase in addition to the one-dimensional Heisenberg phase. At large on-site Coulomb repulsion U, we make contact with the phase diagram of the frustrated Heisenberg chain, which has spin-gapped phases for sufficiently large frustration. For weak U, sufficiently large next-nearest-neighbor hopping t2{t}_{2}t2​ leads to a band structure with four Fermi points rather than two, producing a spin-gapped metallic phase. As U is increased in this regime, the system undergoes a Mott-Hubbard transition to a frustrated antiferromagnetic insulator.
Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.
We investigate the ground-state phase diagram of the one-dimensional 'ionic' Hubbard model with an alternating periodic potential at half-filling by numerical diagonalization of finite systems with the Lanczos and density matrix renormalization group methods. We identify an insulator–insulator phase transition from a band to a correlated insulator with simultaneous charge and bond-charge order. The transition point is characterized by the vanishing of the optical excitation gap while simultaneously the charge and spin gaps remain finite and equal. Indications for a possible second transition into a Mott-insulator phase are discussed.