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New Journal of Physics

Scaling theory for Mott–Hubbard transitions: I. T = 0 phase diagram of the 1/2-filled Hubbard model

Anirban Mukherjee, Siddhartha Lal

Published Apr 9, 2020• 17 citations
Publisher

Abstract

Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.

DOI
10.1088/1367-2630/ab8831

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Abstract We present a T = 0 K renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at half filling. The RG procedure treats quantum fluctuations in the single particle occupation number nonperturbatively via the unitarily decoupling of one electronic state at every RG step. The resulting phase diagram thus possesses the quantum fluctuation energy scale (ω) as one of its axes. A relation is derived between ω and the effective temperature scale upto which gapless, as well as emergent gapped phases can be obtained. We find that the normal and insulating phases of the half-filled Hubbard model correspond, for any on-site repulsion, to a marginal Fermi liquid normal phase and a topologically-ordered gapped Mott insulating liquid respectively. The marginal Fermi liquid is found to arise from singular forward scattering in directions normal to the nested Fermi surface, while singular backscattering events lead to Mott liquid state. The transition between these two phases involves passage through a pseudogapped phase bookended by Fermi surface topology-changing Lifshitz transitions. The pseudogap phase is observed to arise from the electronic differentiation encoded within the nested Fermi surface, and involves the gradual gapping of the Fermi surface from antinodes to nodes via charge and spin excitations that are mutually entangled. We obtain effective Hamiltonians for various phases, as well as wavefunctions for the low-energy many-body eigenstates of the Mott liquid. Benchmarking of the ground-state energy per particle and the double-occupancy fraction for the Mott liquid against existing numerical results yields excellent agreement. Presence of a Néel ordering symmetry-breaking perturbation in the RG leads to an antiferromagnetic spin-ordered charge insulating Mott state. Our results thus offer novel insights on a variety of aspects of the Mott–Hubbard problem, and can be extended to the doped system.
Abstract We present a T = 0 K renormalization group (RG) phase diagram for the hole-doped 2D Hubbard model on the square lattice. The RG method employed is nonperturbative in treating quantum fluctuations of the single-particle occupation number via the unitarily decoupling of one electronic state at every RG step. As a result, the RG phase diagram possesses the quantum fluctuation energy scale (ω) as one of its axes. Using effective Hamiltonians and wavefunctions for the low-energy many-body eigenstates for the doped Mott liquid obtained from the stable fixed point of the RG flows, we demonstrate the collapse of the pseudogap for charge excitations (Mottness) at a quantum critical point (QCP) possessing a nodal non-Fermi liquid with superconducting fluctuations, and spin-pseudogapping near the antinodes. The QCP is characterised using both thermodynamic and quantum information-theoretic measures. d-wave superconducting order is shown to arise from this quantum critical state of matter. The pseudogap phase possesses a variety of fluctuations that lead to several symmetry-broken phases at low-energies. Benchmarking of the ground state energy per particle and the double-occupancy fraction obtained from a finite-size scaling analysis against existing numerical results yields excellent agreement. We present detailed insight into the T = 0 origin of several experimentally observed findings in the cuprates, including Homes law and Planckian dissipation. We also establish that the heirarchy of temperature scales for the pseudogap (T PG), onset temperature for pairing (T ons), formation of the Mott liquid (T ML) and superconductivity (T C) obtained from our analysis is quantitatively consistent with that observed experimentally for some members of the cuprates. Our results offer insight on the ubiquitous origin of superconductivity in doped Mott insulating states, and pave the way towards a systematic search for higher superconducting transition temperatures in such systems.
Abstract We consider the extended Hubbard model on a two-dimensional square lattice at half-filling. The model is investigated using the strong coupling diagram technique. We sum infinite series of ladder diagrams allowing for full-scale charge and spin fluctuations and the actual short-range antiferromagnetic order for nonzero temperatures. In agreement with earlier results, we find the first-order phase transition in the charge subsystem occurring at v = v c ≳ U/4 with v and U the intersite and on-site Coulomb repulsion constants. The transition reveals itself in an abrupt sign change of a sharp maximum in the zero-frequency charge susceptibility at the corner of the Brillouin. States arising at the transition have alternating deviations of electron occupations from the mean value on neighboring sites. Due to fluctuations, these alternating occupation deviations have short-range order. For the considered parameters, such behavior is found for U ≲ 5t with t the hopping constant. For the insulating case U ≳ 6t, in which the transition is not observed, we find a continuous growth of the Mott gap with v. The evolution of the electron density of states with increasing v is also considered.
We discuss the appearance of quantum orders in the Hubbard model for interacting electrons, at half-filling. Such phases do not have local order parameters and need to be characterized by the quantum mechanical properties of their ground state. On one hand, we study the Mott transition from a metal to a spin liquid insulator in two dimensions, of potential relevance to some layered organic compounds. The correlation-driven transition occurs at fixed filling and involves fractionalization of the electron: upon entering the insulator, a Fermi surface of neutral spinons coupled to an internal gauge field emerges. We focus on the transport properties near the quantum critical point and find that the emergent gauge fluctuations play a key role in determining the universal scaling. Second, motivated by a class of three-dimensional transition metal oxides, the pyrochlore iridates, we study the interplay of non-trivial band topology and correlations. Building on the strong spin orbit coupling in these compounds, we construct a general microscopic Hubbard model and determine its mean-field phase diagram, which contains topological insulators, Weyl semimetals, axion insulators and various antiferromagnets. We also discuss the effects many-body correlations on theses phases. We close by examining a fractionalized topological insulator that combines the two main themes of the thesis: fractionalization and non-trivial band topology. Specifically, we study how the two-dimensional protected surface states of a topological Mott insulator interact with a three-dimensional emergent gauge field. Various correlation effects on observables are identified.
Abstract Using the strong coupling diagram technique, we investigate the extended Hubbard model on a two-dimensional square lattice. This approach allows for charge and spin fluctuations and a short-range antiferromagnetic order at nonzero temperatures. The model features the first-order phase transition to states with alternating site occupations (SAO) at the intersite repulsion v = v c . In this work, we show that doping decreases v c . For a nonzero next-nearest neighbor hopping t ′ , less mobile carriers produce a stronger fall in v c . For half-filling and t ′ = 0 , we consider phase diagrams for a fixed temperature T, on-site U, and intersite repulsions. The diagrams contain regions of SAO, Mott insulator, and several metallic states distinguished by their densities of states. Two of them are characterized by a dip and a peak at the Fermi level. The dip originates from the Slater mechanism for itinerant electrons, while the peak to bound states of electrons with localized magnetic moments. The existence of these two metallic regions in the phase diagram is a manifestation of the Pomeranchuk effect. The boundary between these regions reveals itself as a kink in the curve v c (T) and as a maximum in the T dependence of the double occupancy D. Our calculated D for different values of v, U, and T are in semiquantitative agreement with Monte Carlo results.
Employing a combination of functional renormalization group calculations and projective determinantal quantum Monte Carlo simulations, we examine the Hubbard model on the square lattice bilayer at half filling. From this combined analysis, we obtain a comprehensive account of the ground-state phase diagram with respect to the extent of the system's metallic and (antiferromagnetically ordered) Mott-insulating as well as band-insulating regions. By means of an unbiased functional renormalization group approach, we exhibit the antiferromagnetic Mott-insulating state as the relevant instability of the free metallic state, induced by any weak finite on-site repulsion. Upon performing a careful analysis of the quantum Monte Carlo data, we resolve the difficulty of identifying this antiferromagnetic ground state for finite interlayer hopping in the weak-coupling regime, where nonmonotonic finite-size corrections are shown to relate to the two-sheeted Fermi surface structure of the metallic phase. On the other hand, quantum Monte Carlo simulations are well suited to identify the transition between the Mott-insulating phase and the band insulator in the intermediate-to-strong coupling regime. Here, we compare our numerical findings to indications for the transition region obtained from the functional renormalization group procedure.
We study the behavior of fermion liquid defined on hexagonal and triangular lattices with short-range repulsion at half filling. In strong coupling limit the Mott-Hubbard phase state is present, the main peculiarity of insulator state is a doubled cell of the lattices. In the insulator state at half filling fermions with momenta kkk and k+πk+πk+π are coupled via the effective λλλ-field, the gap in the spectrum of quasi-particle excitations opens and the Mott phase transition is occured at a critical value of the one-site Hubbard repulsion~UcU_cUc​. Uc=3.904U_c=3.904Uc​=3.904 and Uc=5.125U_c=5.125Uc​=5.125 are calculated values for hexagonal and triangular lattices, respectively. Depending on the magnitude of the short-range repulsion, the gap in the spectrum and the energy of the ground state are calculated. The proposed approach is universal; it is implemented for an arbitrary dimension and symmetry of the lattice for fermions models with short-range repulsion.