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Communications in Physics

Metal-insulator Phase Diagram for the Fully Diagonal Disordered Hubbard Model at Half-filling

Hoàng Anh Tuấn, Nguyen Thi Hai Yen

Published Sep 21, 2016• 0 citations
Publisher

Abstract

The electronic properties of strongly correlated systems with binary type of disorder are investigated using the coherent potential approximation. For half-filled system, two transitions from a band insulator via a metallic state to a Mott insulator are found with increasing the correlation strength of only one of the constituents. Our phase diagram is consistent with those obtained by the dynamical mean field theory.

DOI
10.15625/0868-3166/26/2/8487

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A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott--Hubbard insulating phase is found at intermediate values of the one-body potential $\ensuremath{\Delta}$ with increasing the Coulomb interaction UUU. We obtain a critical region in which the metallic phase disappears and a coexistence phase between the band and the Mott insulating state sets in. Our results are consistent with those obtained at low dimensions, thus they provide a concrete description for the charge degrees of freedom of the ionic Hubbard model.
The ground-state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean-field theory. For weak to intermediate values of Coulomb repulsion UUU, the system undergoes a transition from a Mott-insulating phase to a metallic phase and then onto a band-insulating phase as the interlayer hopping is increased. In the strong-coupling case, the model exhibits a direct crossover from a Mott-insulating phase to a band-insulating phase. These results are robust with respect to the presence or absence of magnetic order.
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Correlated electrons in a binary alloy ${A}_{x}{B}_{1\ensuremath{-}x}$ are investigated within the Hubbard model and dynamical mean-field theory (DMFT). The random energies ${\ensuremath{\epsilon}}_{i}$ have a bimodal probability distribution and an energy separation $\ensuremath{\Delta}.$ We solve the DMFT equations by the numerical renormalization-group method at zero temperature and calculate the spectral density as a function of disorder strength $\ensuremath{\Delta}$ and interaction U at different fillings. For filling factors $\ensuremath{\nu}=x$ or 1+x1+x1+x the lower or upper alloy subband is half filled and the system becomes a Mott insulator at strong interactions, with a correlation gap at the Fermi level. At the metal-insulator transition hysteresis is observed. We also analyze the effective theory in the $\stackrel{\ensuremath{\rightarrow}}{\ensuremath{\Delta}}\ensuremath{\infty}$ limit and find good agreement between analytical and numerical results for the critical interaction Uc{U}_{c}Uc​ at which the metal-insulator transition occurs.