We investigate the phase diagram of the square lattice bilayer Hubbard model at half-filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of the interlayer hopping and on-site Coulomb repulsion U . With this study we resolve some discrepancies in previous calculations based on the dynamical mean-field theory, and we are able to determine the nature of the phase transitions between metal, Mott insulator and band insulator. In the magnetic case we find only two phases: an antiferromagnetic Mott insulator at small for any value of U and a band insulator at large . At large U values we approach the Heisenberg limit. The paramagnetic phase diagram shows at small a metal to Mott insulator transition at moderate U values and a Mott to band insulator transition at larger U values. We also observe a re-entrant Mott insulator to metal transition and metal to band insulator transition for increasing in the range of . Finally, we discuss the phase diagrams obtained in relation to findings from previous studies based on different many-body approaches.
We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential Delta, the so-called ionic Hubbard model, using cluster dynamical mean-field theory. We find that for large Coulomb repulsion, U >> Delta, the system is a Mott insulator (MI). For weak to intermediate values of Delta, on decreasing U, the Mott gap closes at a critical value Uc1(Delta) beyond which a correlated insulating phase with possible bond order is found. Further, this phase undergoes a first-order transition to a band insulator (BI) at Uc2(Delta) with a finite charge gap at the transition. For large Delta, there is a direct first-order transition from a MI to a BI with a single metallic point at the phase boundary.
Abstract. We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of the interlayer hopping t ⊥ and on-site Coulomb repulsion U. With this study we resolve some discrepancies in previous calculations based on the dynamical mean field theory, and we are able to determine the nature of the phase transitions between metal, Mott insulator and band insulator. In the magnetic case we find only two phases: An antiferromagnetic Mott insulator at small t ⊥ for any value of U and a band insulator at large t⊥. At large U values we approach the Heisenberg limit. The paramagnetic phase diagram shows at small t ⊥ a metal to Mott insulator transition at moderate U values and a Mott to band insulator transition at larger U values. We also observe a re-entrant Mott insulator to metal transition and metal to band insulator transition for increasing t ⊥ in the range of 5.5t < U < 7.5t. Finally, we discuss the obtained phase diagrams in relation to previous studies based on different many-body approaches. PACS numbers: 71.10.Fd, 71.27.+a, 71.30.+h 1.
Employing a combination of functional renormalization group calculations and projective determinantal quantum Monte Carlo simulations, we examine the Hubbard model on the square lattice bilayer at half filling. From this combined analysis, we obtain a comprehensive account of the ground-state phase diagram with respect to the extent of the system's metallic and (antiferromagnetically ordered) Mott-insulating as well as band-insulating regions. By means of an unbiased functional renormalization group approach, we exhibit the antiferromagnetic Mott-insulating state as the relevant instability of the free metallic state, induced by any weak finite on-site repulsion. Upon performing a careful analysis of the quantum Monte Carlo data, we resolve the difficulty of identifying this antiferromagnetic ground state for finite interlayer hopping in the weak-coupling regime, where nonmonotonic finite-size corrections are shown to relate to the two-sheeted Fermi surface structure of the metallic phase. On the other hand, quantum Monte Carlo simulations are well suited to identify the transition between the Mott-insulating phase and the band insulator in the intermediate-to-strong coupling regime. Here, we compare our numerical findings to indications for the transition region obtained from the functional renormalization group procedure.
We investigate the ground-state phase diagram of the half-filled $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}$ repulsive Hubbard model in the presence of a staggered ionic potential $\ensuremath{\Delta}$ using the continuum-limit bosonization approach. We find that with increasing on-site repulsion
U, depending on the value of the next-nearest-neighbor hopping amplitude ${t}^{\ensuremath{'}}$, the model shows three different versions of the ground-state phase diagram. For ${t}^{\ensuremath{'}}<{t}_{c}^{{*}^{\ensuremath{'}}}$, the ground-state phase diagram consists of the following three insulating phases: band insulator at
U<Uc, ferroelectric insulator at
Uc<U<Us, and correlated (Mott) insulator at
U>Uc. For ${t}^{\ensuremath{'}}>{t}_{c}^{\ensuremath{'}}$ there is only one transition from a spin-gapped metallic phase at
U<Uc to a ferroelectric insulator at
U>Uc. Finally, for intermediate values of the next-nearest-neighbor hopping amplitude ${t}_{c}^{{*}^{\ensuremath{'}}}<{t}^{\ensuremath{'}}<{t}_{c}^{\ensuremath{'}}$ we find that with increasing on-site repulsion, at
Uc1 the model undergoes a second-order commensurate-incommensurate-type transition from a band insulator into a metallic state and at larger
Uc2 there is a Kosterlitz-Thouless-type transition from a metal to a ferroelectric insulator.