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arXiv:cond-mat/0611415 · Physical Review B

Band-insulator–metal–Mott-insulator transition in the half-filled t−t′ ionic Hubbard chain

G. I. Japaridze, R. Hayn, P. Lombardo, E. Müller‐Hartmann

Published Jun 22, 2007• 17 citations
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Abstract

We investigate the ground-state phase diagram of the half-filled $t\text{\ensuremath{-}}{t}^{\ensuremath{'}}$ repulsive Hubbard model in the presence of a staggered ionic potential $\ensuremath{\Delta}$ using the continuum-limit bosonization approach. We find that with increasing on-site repulsion $U$, depending on the value of the next-nearest-neighbor hopping amplitude ${t}^{\ensuremath{'}}$, the model shows three different versions of the ground-state phase diagram. For ${t}^{\ensuremath{'}}<{t}_{c}^{{*}^{\ensuremath{'}}}$, the ground-state phase diagram consists of the following three insulating phases: band insulator at $U<{U}_{c}$, ferroelectric insulator at ${U}_{c}<U<{U}_{s}$, and correlated (Mott) insulator at $U>{U}_{c}$. For ${t}^{\ensuremath{'}}>{t}_{c}^{\ensuremath{'}}$ there is only one transition from a spin-gapped metallic phase at $U<{U}_{c}$ to a ferroelectric insulator at $U>{U}_{c}$. Finally, for intermediate values of the next-nearest-neighbor hopping amplitude ${t}_{c}^{{*}^{\ensuremath{'}}}<{t}^{\ensuremath{'}}<{t}_{c}^{\ensuremath{'}}$ we find that with increasing on-site repulsion, at ${U}_{c1}$ the model undergoes a second-order commensurate-incommensurate-type transition from a band insulator into a metallic state and at larger ${U}_{c2}$ there is a Kosterlitz-Thouless-type transition from a metal to a ferroelectric insulator.

DOI
10.1103/physrevb.75.245122

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We investigate the ground-state phase diagram of the half-filled t\ensuremath-t\ensuremath′t\text{\ensuremath{-}}{t}^{\ensuremath{'}}t\ensuremath-t\ensuremath′ repulsive Hubbard model in the presence of a staggered ionic potential \ensuremathΔ\ensuremath{\Delta}\ensuremathΔ using the continuum-limit bosonization approach. We find that with increasing on-site repulsion UUU, depending on the value of the next-nearest-neighbor hopping amplitude t\ensuremath′{t}^{\ensuremath{'}}t\ensuremath′, the model shows three different versions of the ground-state phase diagram. For t\ensuremath′<tc∗\ensuremath′{t}^{\ensuremath{'}}<{t}_{c}^{{*}^{\ensuremath{'}}}t\ensuremath′<tc∗\ensuremath′​, the ground-state phase diagram consists of the following three insulating phases: band insulator at U<UcU<{U}_{c}U<Uc​, ferroelectric insulator at Uc<U<Us{U}_{c}<U<{U}_{s}Uc​<U<Us​, and correlated (Mott) insulator at U>UcU>{U}_{c}U>Uc​. For t\ensuremath′>tc\ensuremath′{t}^{\ensuremath{'}}>{t}_{c}^{\ensuremath{'}}t\ensuremath′>tc\ensuremath′​ there is only one transition from a spin-gapped metallic phase at U<UcU<{U}_{c}U<Uc​ to a ferroelectric insulator at U>UcU>{U}_{c}U>Uc​. Finally, for intermediate values of the next-nearest-neighbor hopping amplitude tc∗\ensuremath′<t\ensuremath′<tc\ensuremath′{t}_{c}^{{*}^{\ensuremath{'}}}<{t}^{\ensuremath{'}}<{t}_{c}^{\ensuremath{'}}tc∗\ensuremath′​<t\ensuremath′<tc\ensuremath′​ we find that with increasing on-site repulsion, at Uc1{U}_{c1}Uc1​ the model undergoes a second-order commensurate-incommensurate-type transition from a band insulator into a metallic state and at larger Uc2{U}_{c2}Uc2​ there is a Kosterlitz-Thouless-type transition from a metal to a ferroelectric insulator.
We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential Delta, the so-called ionic Hubbard model, using cluster dynamical mean-field theory. We find that for large Coulomb repulsion, U >> Delta, the system is a Mott insulator (MI). For weak to intermediate values of Delta, on decreasing U, the Mott gap closes at a critical value Uc1(Delta) beyond which a correlated insulating phase with possible bond order is found. Further, this phase undergoes a first-order transition to a band insulator (BI) at Uc2(Delta) with a finite charge gap at the transition. For large Delta, there is a direct first-order transition from a MI to a BI with a single metallic point at the phase boundary.
An unusual metallic phase is argued to develop in the one-dimensional ionic Hubbard model, at half-filling and zero magnetization, at intermediate electron-electron repulsion UUU when second-neighbors hopping is allowed and tuned close to a topological Lifshitz transition (connected with a change of the Fermi surface in the noninteracting system). The metallic state lies between a band insulator phase at low repulsion and a correlated (Mott-like) insulator phase at high repulsion. In approaching the latter, the model supports short-range antiferromagnetic order and spontaneous dimerization of both bond charge and nearest-neighbor antiferromagnetic correlations. A combination of mean-field and effective-field theory (bosonization) provides an analytical understanding of the physical processes underlying the argued phase transitions. The ground and low-energy excited states of finite-length chains are explored by density-matrix renormalization-group (DMRG) calculations, providing numerical evidence for the intermediate gapless phase. Such finite systems are attainable by cold atoms in optical lattices for a wide range of the parameter UUU.
We study the quantum phase transition from an insulator to a metal realized at ${t}^{\ensuremath{'}}={t}_{c}^{\ensuremath{'}}>0.5t$ in the ground state of the half-filled Hubbard chain with both nearest-neighbor (t)(t)(t) and next-nearest-neighbor $({t}^{\ensuremath{'}})$ hopping. The study is carried out using the bosonization approach and density-matrix renormalization-group calculations. An effective low-energy Hamiltonian that describes the insulator-metal transition is derived. We find that the gross features of the phase diagram are well described by the standard theory of commensurate-incommensurate transitions in a wide range of parameters. We also obtain an analytical expression for the insulator-metal transition line ${t}_{c}^{\ensuremath{'}}(U,t)$. We present results of density-matrix-renormalization-group calculations of spin and charge distribution in various sectors of the phase diagram. The numerical results support the picture derived from the effective theory and give evidence for the complete separation of the transitions involving spin and charge degrees of freedom.
Mean-field ground-state phase diagram of the t−t′{t-t^\prime}t−t′ ionic-Hubbard chain
Ground state (GS) phase diagram of the one dimensional repulsive Hubbard model with both nearest neighbor (ttt) and next-nearest-neighbor (t′t^{\prime}t′) hopping and a staggered potential (ΔΔΔ) is determined in the case of half-filled band and zero net magnetization within the mean-field theory. The model may be realized by cold atoms in engineered optical lattices. Connection between the peculiarities of the GS phase diagram of the interacting system and the topological Lifshitz transition in GS of free particle chain is discussed. The mean-field Hamiltonian is given by six order parameters, which are determined self-consistently. It is shown that the GS phase diagram {\em predominantly} consists of insulating phases characterized by coexistence of the long-range ordered modulations of the charge- (I) and antiferromagnetic (AF) spin-density with wavelengths equal to two and/or four lattice units. Below the Lifshitz transition, the GS phase diagram is qualitatively similar to that of the standard (t′=0{t^{\prime}=0}t′=0) ionic Hubbard model. After the Lifshitz transition, charge- and spin-density modulations emerge within the sublattices and have wavelengths equal to four lattice units. For moderate values of the on-site repulsion the insulating phases are characterized by the presence of I and AF modulations coexisting with ferrimagnetic spin- and charge-density modulations within the one sublattice, or by the coexistence of I order and additional AF spin density modulation only within the sublattice with high ionic potential. At large repulsion the insulating phase with AF order inside both sublattices and remaining small ionicity left between the sublattices is realized.
We investigate the ground-state phase diagram of the half-filled one-dimensional Hubbard model with next-nearest-neighbor hopping using the density-matrix renormalization-group technique as well as an unrestricted Hartree-Fock approximation. We find commensurate and incommensurate disordered magnetic insulating phases and a spin-gapped metallic phase in addition to the one-dimensional Heisenberg phase. At large on-site Coulomb repulsion U, we make contact with the phase diagram of the frustrated Heisenberg chain, which has spin-gapped phases for sufficiently large frustration. For weak U, sufficiently large next-nearest-neighbor hopping t2{t}_{2}t2​ leads to a band structure with four Fermi points rather than two, producing a spin-gapped metallic phase. As U is increased in this regime, the system undergoes a Mott-Hubbard transition to a frustrated antiferromagnetic insulator.
The ground-state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean-field theory. For weak to intermediate values of Coulomb repulsion UUU, the system undergoes a transition from a Mott-insulating phase to a metallic phase and then onto a band-insulating phase as the interlayer hopping is increased. In the strong-coupling case, the model exhibits a direct crossover from a Mott-insulating phase to a band-insulating phase. These results are robust with respect to the presence or absence of magnetic order.