The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.
The major challenges in trapped-ion quantum computation are to scale up few-ion experiments to many qubits and to improve control techniques so that quantum logic gates can be carried out with higher fidelities. This thesis reports experimental progress in both of these areas. In the early part of the thesis we describe the fabrication of a surface-electrode ion trap, the development of the apparatus and techniques required to operate it and the successful trapping of 40Ca+ ions. Notably we developed methods to control the orientation of the principal axes and to minimise ion micromotion. We propose a repumping scheme that simplifies heating rate measurements for ions with low-lying D levels, and use it to characterise the electric field noise in the trap. Surface-electrode traps are important because they offer a route to dense integration of electronic and optical control elements using existing microfabrication technology. We explore this scaling route by testing a series of three traps that were microfabricated at Sandia National Laboratories. Investigations of micromotion and charging of the surface by laser beams were carried out and improvements to future traps are suggested. Using one of these traps we also investigated anomalous electrical noise from the electrode surfaces and discovered that it can be reduced by cleaning with a pulsed laser. A factor of two decrease was observed; this represents the first in situ removal of this noise source, an important step towards higher gate fidelities. In the second half of the thesis we describe the design and construction of an experiment for the purpose of replacing laser-driven multi-qubit quantum logic gates with microwave-driven ones. We investigate magnetic-field-independent hyperfine qubits in 40Ca+ as suitable qubits for this scheme. We make a design study of how best to integrate an ion trap with the microwave conductors required to implement the gate and propose a novel integrated resonant structure. The trap was fabricated and ions were successfully loaded. Single-qubit experiments show that the microwave fields above the trap are in excellent agreement with software simulations. There are good prospects for demonstrating a multi-qubit gate in the near future. We conclude by discussing the possibilities for larger-scale quantum computation by combining microfabricated traps and microwave control.
Microfabricated ion traps are an important tool in the development of scalable quantum systems. Tremendous advancements towards an ion quantum computer were made in the past decade and most requirements for a quantum computer have been fulfilled in individual experiments. Incorporating all essential capabilities in a fully scalable system will require the further advancement of established quantum information technologies and development of new trap fabrication techniques. In my thesis I will discuss the theoretical background and experimental setup required for the operation of ion traps. Measurement of the important ion trap heating rate was performed in the setup and I will discuss the results in more detail. I will give a review of microfabrication processes used for the fabrication of traps, outlining advantages, disadvantages and issues inherent to the processes. Following the review I will present my work on a concept for a scalable ion trap quantum system based on microwave quantum gates and shuttling through X-junctions. Many of the required building blocks, including ion trap structures with current-carrying wires intended to create strong magnetic field gradients for microwave gates were investigated further. A novel fabrication process was developed to combine current-carrying wires with advanced multilayered ion trap structures. Several trap designs intended for proof of principle experiments of high fidelity microwave gates, advanced detection techniques and shuttling between electrically disconnected ion traps will be presented. Also the electrode geometry of an optimized X-junction design with strongly suppressed rf barrier height will be presented. Further, I developed several modifications for the experimental setup to extend the existing capabilities. A plasma source capable of performing in-situ cleans of the trap electrode surfaces, which has been demonstrated to dramatically reduce the heating rate in ion traps, was incorporated. I will also present a vacuum system modification designed to cool ion traps with current-carrying wires and transport the generated heat out of the vacuum system. In addition a novel low-noise, high-speed, multichannel voltage control system was developed by me. The device can be used in future experiments to precisely shuttle ions from one trapping zone to another and also to shuttle ions through ion trap junctions. Lastly I will outline the process optimization and microfabrication of my ion trap designs. A novel fabrication process which makes use of the extremely high thermal conductivity of diamond substrates and combines it with thick copper tracks embedded in the substrate was developed. Large currents will be passed through the wires creating a strong and controllable magnetic field gradient. Ion trap designs with isolated electrodes connected via buried wires can be placed on top of the current-carrying wires, allowing the most advanced electrode designs to be fabricated with current-carrying wires.
While quantum information processing offers a tantalizing possibility of a significant speedup in execution of certain algorithms, as well as enabling previously unmanageable simulations of large quantum systems, it remains extremely difficult to realize experimentally. Recently, fundamental building blocks of a quantum computer, including one and two qubit gates, teleportation and error correction, were demonstrated using trapped atomic ions. Scaling to a larger number of qubits requires miniaturization of the ion traps, currently limited by the sharply increasing motional state decoherence at sub-100 μm ion-electrode distances. This thesis explores the source and suppression of this decoherence at cryogenic temperatures, and demonstrates fundamental logic gates in a surface electrode ion trap.
Construction of the apparatus requires the development of a number of experimental techniques. Design, numerical simulation and implementation of a surface electrode ion trap is presented. Cryogenic cooling of the trap to near 4 K is accomplished by contact with a bath cryostat. Ions are loaded by ablation or photoionization, both of which are characterized in terms of generated stray fields and heat load.
The bulk of new experimental results deals with measurements of electric field noise at the ion's position. Upon cooling to 6 K, the measured rates are suppressed by up to 7 orders of magnitude, more than two orders of magnitude below previously published data for similarly sized traps operated at room temperature. The observed noise depends strongly on fabrication process, which suggests further improvements are possible. The measured dependence of the electric field noise on temperature is inconsistent with published models, and can be explained using a continuous spectrum of activated fluctuators.
The fabricated surface electrode traps are used to demonstrate coherent operations and the classical control required for trapped ion quantum computation. The necessary spectral properties of coherent light sources are achieved with a novel design using optical feedback to a triangular, medium finesse, cavity, followed by electronic feedback to an ultra-high finesse reference cavity. Single and two qubit operations on a single ion are demonstrated with classical fidelity in excess of 95%. Magnetic field gradient coils built into the trap allow for individual addressing of ions, a prerequisite to scaling to multiple qubits. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)
Towards the goal of a large-scale quantum computer based on trapped ions, near-field microwaves represent a promising approach to perform the techni- cally challenging key operation of a two-qubit entangling gate. In this thesis we present the first microwave-driven two-qubit gate in 9Be+ ions employing a first-order field-independent qubit transition and a scalable surface-electrode ion trap at room temperature. We test the quality of the gate operation by producing a maximally entangled state and measuring the resulting state preparation fidelity in a reduced tomography procedure. For the best two- qubit gate achieved in the system we find this fidelity to be F = 98.2 ± 1.2 %. Following a comprehensive error analysis based on numerical simulations and experimentally determined input parameters, we identify current infidelity con- tributions of the apparatus. Here, the natural error source of the microwave near-field approach, namely fluctuating AC Zeeman shifts, could be reduced to the 10^−4 level due to the optimized design of the employed microwave con- ductor. As we find that the three largest errors can all be reduced upon purely technical improvements, higher fidelities are feasible in the future. Besides the gate realization, the thesis also comprises the initial characterization of the employed ion trap as well as the design and construction of a Raman laser at ∼ 313 nm which is utilized to perform near ground state cooling of radial modes of a single- and two-ion crystal. Here, ensuing heating rate measure- ments on a single-ion’s radial modes show good agreement with the electric- field noise spectral density expected from literature given the chosen mode frequency and nearest ion-to-electrode distance of 70 µm. Finally, we present the operation of a first multi-layer ion trap whose electrode layout features a 3-dimensional microwave conductor intended for performing microwave-driven two-qubit gates. Following a characterization of the resulting near-field pat- tern using a single ion as a local field probe, we find the multi-layer conductor to have significantly better field properties when compared to an equivalent single-layer design. Given these promising results, future work will focus on the integration of similar microwave circuitry in a multi-zone trap array as envisioned by the QCCD architecture.
Trapped ions within Paul traps have shown to be a promising architecture in the realisation of a quantum information processor together with the ability of providing quantum simulations. Linear Paul traps have demonstrated long coherence times with ions being well isolated from the environment, single and multi-qubit gates and the high fidelity detection of states. The scalability to large number of qubits, incorporating all the previous achievements requires an array of linear ion traps. Microfabrication techniques allow for fabrication and micron level accuracy of the trap electrode dimensions through photolithography techniques. The first part of this thesis presents the experiential setup and trapping of Yb+ ions needed to test large ion trap arrays. This include vacuum systems that can host advanced symmetric and asymmetric ion traps with up to 90 static voltage control electrodes. Demonstration of a single trapped Yb+ ion within a two-layer macroscopic ion trap is presented. with an ion-electrode distance of 310(10) µm. The anomalous heating rate and spectral noise density of the trap was measured, a main form of decoherence within ion traps. The second half of this thesis presents the design and fabrication of multi-layer asymmetric ion traps. This allows for isolated electrodes that cannot be accessed via surface pathways, allowing for higher density of electrodes as well as creating novel trap designs that allow for the potential of quantum simulations to be demonstrated. These include two-dimensional lattices and ring trap designs in which the isolated electrodes provide more control in the ion position. For the microfabrication of these traps I present a novel high-aspect ratio electroplated electrode design that provides shielding of the dielectric layer. This provides a means to mitigate stray electric field due to charge build up on the dielectric surfaces. Electrical testing of the trap structures was performed to test bulk breakdown and surface flashover of the ion trap architectures. Results showed sufficient isolation between electrodes for both radio frequency and static breakdown. Surface flashover voltage measurements over the dielectric layer showed an improvement of more than double over previous results using a new fabrication technique. This will allow for more powerful ion trap chips needed for the next generation of microfabricated ion trap arrays for scalable quantum technologies.
Scalability is a challenging yet key aspect required for large scale quantum computing and simulation using ions trapped in radio-frequency (rf) Paul traps. In this thesis 171Yb+ ions are used to demonstrate a magnetic field insensitive qubit which has a measured coherence time of 1.5 s, making it an ideal candidate to use for storing quantum information. A magnetic field sensitive qubit is also characterised which can be used for the implementation of multi-qubit gates using a potentially very scalable scheme based on microwaves in conjunction with a static magnetic field gradient instead of using lasers. However, the measured coherence time is limited by magnetic field fluctuations and will prohibit high fidelity gate operations from being performed. To address this issue, the preparation of a dressed-state qubit using a microwave based stimulated rapid adiabatic passage (STIRAP) pulse sequence will be presented. This qubit is protected against the noisy environment making it less sensitive to magnetic field fluctuations. The lifetime of this qubit is measured to demonstrate its suitability for storing quantum information. A powerful method for manipulating the dressed-state qubit will be presented and is used to measure a coherence time of the qubit of 500 ms which is two orders of magnitude longer compared to the magnetic field sensitive qubit. It will also be shown that our method allows for the implementation of arbitrary rotations of the dressed-state qubit on the Bloch sphere using only a single rf field. This substantially simplifies the experimental setup for single and multi-qubit gates. Furthermore, this thesis will present a experimental setup capable of successfully operating microfabricated surface ion traps. This setup is then used to operate and characterise the first two-dimensional (2D) lattice of ion traps on a microchip. A unique feature of the microfabrication technique used for this device is the extremely large voltage that can be applied which allows long ion lifetimes along with large secular frequencies to be measured, demonstrating the robustness of this device. Rudimentary shuttling between neighbouring lattice sites will be shown which could be used as part of a efficient scheme to load a large lattice of ions. One of the many applications of a 2D lattice of ions lies in the field of quantum simulations where many-body systems such as quantum magnetism, high temperature superconductivity, the fractional quantum hall effect and synthetic gauge fields can be simulated. It will be shown how making only minor modifications to the microchip the ion-ion separation can be reduced sufficiently to offer an exciting platform for the successful implementation of 2D quantum simulations. A theoretical investigation on the optimal 2D ion trap lattice geometry will also be presented with the aim to maximise the ratio of ion-ion coupling strength to decoherence from motional heating of the ions and to laser induced off-resonant coupling.
Trapped ions, together with superconducting qubits, are one of the two leading hardware platforms for scalable quantum information processing. The development of quantum computers represents a major technological breakthrough comparable to the introduction of classical computing. The benefits of this technology are currently limited by the technical capability to perform high fidelity entangling operations on the qubits. When gate fidelities surpass the fault-tolerance threshold it becomes possible, through error correction, to increase the system size to an arbitrary number of qubits. In this cumulative thesis we address some of the issues in the scalability of the trapped-ion quantum computer based on microwave near-fields. In this approach, gate operations on one or multiple ions are driven by an oscillating magnetic field generated by a current flowing through a conductor. In the first part of this work we discuss the design of traps toward the implementation of large scale systems. We introduce the basic design of a surface-electrode ion trap with embedded microwave conductors. The oscillating magnetic field required to perform the operations is generated by a single optimized conductor. We discuss the simulation and characterization of the magnetic field pattern, which is fixed by the microwave conductor design. In addition, we demonstrate the capability to simulate, fabricate and characterize a multilayer surface ion trap. Multilayer traps are a key aspect for scalability since they are necessary to achieve large system sizes, with many `ion registers', where the registers are interconnected by physically transporting ions between them. In the second part of this thesis we demonstrate the implementation of a two-qubit entangling gate and we explore the possibilities offered by quantum control methods to improve its fidelity. We perform an entangling gate on two 9Be+ ions and measure a Bell state fidelity of 98.2(1.2)%. Error characterization shows that the gate result is limited by technical issues connected to the ions' motional states. To reduce these errors we apply amplitude modulation of the gate microwave drive. After stabilization of the ions' radial modes, we obtain an amplitude modulated gate with infidelity in the 10^-3 range. The result is confirmed by analyzing the data using three different methods. Using additional dynamic decoupling techniques, these results could bring microwave near-field gates past the fault-tolerance threshold.