Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Nanoscale ‘conveyor belt’ teleports quantum state of electron : Mobile quantum bits, which can be shuttled to where they are needed in a circuit, have been used to perform a quantum process called state teleportation.

Lars R. Schreiber

Published Jan 1, 2026• 0 citations
OpenAlex

Related papers

Nanoscale ‘conveyor belt’ teleports quantum state of electron

Lars R. Schreiber

Nature•May 6, 2026•0 citations

Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices

Jack J. Turner, Christian W. Binder, Guido Burkard +1 more

Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2, also known as silicon metal-oxide-semiconductor (SiMOS), devices remain at an early stage. To help address this, we perform full 3D simulations of conveyor-belt charge shuttling in a realistic SiMOS device, building on earlier 2D modelling. We solve the Poisson and time-dependent Schrodinger equations for varying shuttling speeds and gate voltages, focusing on potential pitfalls of typical SiMOS devices such as oxide-interface roughness, gate fabrication imperfections, and charge defects along the transport path. The simulations reveal that for low clavier-gate voltages, the additional oxide screening in multi-layer gate architectures causes conveyor-belt shuttling to collapse to the bucket-brigade mode, inducing considerable orbital excitation in the process. Increasing the confinement restores conveyor-belt operation, which we find to be robust against interface roughness, gate misalignment, and charge defects buried in the oxide. However, our results indicate that defects located at the Si/SiO2-interface can induce considerable orbital excitation. For lower conveyor gate biases, positive defects in the transport channel can even capture passing electrons. Hence we identify key challenges and find operating regimes for reliable charge transport in SiMOS architectures.

quant-pharXiv:2512.03853•Dec 4, 2025

Quantum teleportation and its experimental realization : Teleporting moving quantum states onto a stationary medium

Alexander Thorén

A quantum mechanical state may be transferred between locations using quantum teleportation.Specically information encoded in the polarized state of a light pulse maybe teleported onto the collecti ...

•Jan 1, 2013•0 citations

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda +6 more

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%$ at an instantaneous electron velocity of $270\,\mathrm{mm}\,\mathrm{s}^{-1}$. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.

cond-mat.mes-hallCross-listedarXiv:2601.03942•Jan 8, 2026

Numerical simulation of coherent spin-shuttling in a QuBus with charged defects

Nils Ciroth, Arnau Sala, Ran Xue +4 more

Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with $g$-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit.

cond-mat.mes-hallCross-listedarXiv:2512.03588•Dec 4, 2025

From classical state swapping to quantum teleportation

N. David Mermin

The quantum teleportation protocol is extracted directly out of a standard classical circuit that exchanges the states of two qubits using only controlled-NOT gates. This construction of teleportation from a classically transparent circuit generalizes straightforwardly to d-state systems.

arXiv:quant-ph/0105117•Physical Review A•Dec 14, 2001•28 citations
Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2, also known as silicon metal-oxide-semiconductor (SiMOS), devices remain at an early stage. To help address this, we perform full 3D simulations of conveyor-belt charge shuttling in a realistic SiMOS device, building on earlier 2D modelling. We solve the Poisson and time-dependent Schrodinger equations for varying shuttling speeds and gate voltages, focusing on potential pitfalls of typical SiMOS devices such as oxide-interface roughness, gate fabrication imperfections, and charge defects along the transport path. The simulations reveal that for low clavier-gate voltages, the additional oxide screening in multi-layer gate architectures causes conveyor-belt shuttling to collapse to the bucket-brigade mode, inducing considerable orbital excitation in the process. Increasing the confinement restores conveyor-belt operation, which we find to be robust against interface roughness, gate misalignment, and charge defects buried in the oxide. However, our results indicate that defects located at the Si/SiO2-interface can induce considerable orbital excitation. For lower conveyor gate biases, positive defects in the transport channel can even capture passing electrons. Hence we identify key challenges and find operating regimes for reliable charge transport in SiMOS architectures.
Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of F=100.0000000−9×10−7+0 %F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%F=100.0000000−9×10−7+0​% at an instantaneous electron velocity of 270 mm s−1270\,\mathrm{mm}\,\mathrm{s}^{-1}270mms−1. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.
Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with ggg-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit.