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arXiv:2601.03942

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer, Ran Xue, Lennart Deda, Stefan Trellenkamp, Jhih-Sian Tu, Paul Surrey, Inga Seidler, Hendrik Bluhm, Lars R. Schreiber

cond-mat.mes-hallquant-phSubmitted Jan 7, 2026• Announced Jan 8, 2026
arXivHTMLPDF

Abstract

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%$ at an instantaneous electron velocity of $270\,\mathrm{mm}\,\mathrm{s}^{-1}$. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.

Comments
16 pages, 11 figures

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Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of F=100.0000000−9×10−7+0 %F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%F=100.0000000−9×10−7+0​% at an instantaneous electron velocity of 270 mm s−1270\,\mathrm{mm}\,\mathrm{s}^{-1}270mms−1. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.
Abstract Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the mapping of potential disorder and observe a high single-electron shuttling fidelity of 99.42 ± 0.02% including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture.
Dynamic qubit routing is emerging as a promising architectural path for semiconductor quantum processors. Charge carriers can be rapidly moved around on a chip using traveling-wave potentials known as conveyors, preserving the spin state with high fidelity. Originally developed for spin transport, conveyor-mode shuttling may also offer opportunities for performing qubit operations directly controlled by the motion itself. Here, we demonstrate coherent single- and two-qubit control by conveyor-mode electron shuttling, using two conceptually different approaches. First, conveyor electric-dipole spin resonance (conveyor EDSR) achieves high-fidelity rotations by resonantly shuttling spins through transverse magnetic-field gradients at their mean Larmor frequency. Second, conveyor diabatic gates exploit quantization-axis tilts for tunable bang-bang control. Combining diabatic conveyor transport with exchange activation controlled by the motion directly yields a variety of effective two-qubit interactions selectable via the shuttling speed and distance. These experimental results motivate an architectural paradigm of reconfigurable and transport-driven spin qubits.
Universal quantum computing promises solutions to a wide range of problems of significant scientific and socioeconomic impact that are computationally intractable using classical hardware. Since physical qubits are inherently noisy and prone to decoherence, realizing a sufficient number of logical qubits to unlock practically relevant problem classes will likely require quantum error correction, resulting in an overhead of millions of physical qubits. Among all competing hardware platforms, spin qubits in gate-defined quantum dots are uniquely positioned: single- and two-qubit gate fidelities routinely exceed the error-correction threshold, and the experimentally proven compatibility with industrial-grade semiconductor manufacturing may enable millions of qubits on a single chip. Realizing this potential, however, requires quantum processor architectures that scale to large qubit numbers with two‑dimensional connectivity while maintaining high operational fidelities. Building on the theoretical feasibility of high‑fidelity spin‑coherent electron shuttling, the SpinBus architecture is introduced to enable scaling to application-relevant qubit numbers. The SpinBus architecture leverages the conveyor-mode shuttling device named Quantum Bus (QuBus) for coherent qubit coupling over micron‑scale distances to accommodate, at the level of the quantum processor chip, wiring fan‑out and locally integrated control electronics at cryogenic temperatures. Device simulations for all relevant operations in the Si/SiGe platform validate operation fidelities exceeding 99 % as well as compatibility with the requirements of established semiconductor patterning technology. Control with room‑temperature electronics plausibly supports at least 144 qubits, while substantially larger quantum processor sizes are conceivable using cryogenic control electronics. For the experimental realization of QuBus devices, a novel high‑yield multilayer electron-beam lithography process, which can readily be adapted to different device layouts, was developed to fabricate the required > 100 aligned metallic gate electrodes. Benchmarking with a semiconductor industry‑inspired methodology and inspection of > 100 devices demonstrated 99 % gate fabrication yield and at least 5 nm overlay accuracy. Utilizing GaAs/(Al,Ga)As QuBus prototype devices with a 7 µm shuttling channel for quantized-current experiments validated key criteria for conveyor-mode shuttling, in particular linear current scaling for operation frequencies up to 40 MHz, and provided preliminary evidence consistent with quantized conveyor-mode electron transfer. These results support the viability of conveyor-mode shuttling for qubit coupling and indicate the suitability of QuBus devices for metrological applications.
As silicon spin qubit chips are increasing in qubit number and area, methods for the screening of qubit related material parameters become vital. Here we demonstrate the two-dimensional mapping of small variations of the electron g-factor of quantum dots formed in planar Si/SiGe quantum wells with precision better than 10−310^{-3}10−3 and with nanometer lateral resolution. We scan the electron g-factor across a 40 nm ×\times× 400 nm area and observe two g-factors per QD site which obey a striking symmetry and bimodal distribution across the area. These two g-factors relate to valley states of the electron in the quantum dot in agreement with a recent theoretical model. Using conveyor-belt shuttling of entangled electron spin pairs, complementary to the mapping of the local valley-splitting, we map the g-factor. We compare g-factor and valley splitting maps measured on the same device, and extract the complex intervalley coupling parameter along the shuttle trajectories applying a theoretical model of g-factor dependence on intervalley coupling. These maps will allow unprecedented insights into the spin-valley dynamics during qubit manipulation, readout and shuttling and serve as a benchmark for the engineering of Si/SiGe heterostructures for large-scale quantum chips.
Recent advances in coherent conveyor-mode spin qubit shuttling are paving the way for large-scale quantum computing platforms with qubit connectivity achieved by spin qubit shuttles. We developed a simulation tool to investigate numerically the impact of device imperfections on the spin-coherence of conveyor-mode shuttling in Si/SiGe. We simulate the quantum evolution of a mobile electron spin-qubit under the influence of sparse and singly charged point defects placed in the Si/SiGe heterostructure in close proximity to the shuttle lane. We consider different locations of a single charge defect with respect to the center of the shuttle lane, multiple orbital states of the electron in the shuttle with ggg-factor differences between the orbital levels, and orbital relaxation induced by electron-phonon interaction. With this simulation framework, we identify the critical defect density of charged point defects in the heterostructure for conveyor-mode spin qubit shuttle devices and quantify the impact of a single defect on the coherence of a qubit.
Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7% for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 μm, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon.