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Bulletin of the Russian Academy of Sciences Physics

Design, Modeling, and Experimental Realization of a Surface Ion Trap for 174Yb+

Т. С. Аббасов, I. A. Stolyarov, Dmitry S. Chuchelov, Maria I. Vaskovskaya, Sergei A. Zibrov, N. L. Kvashnin, Peter V. Borisyuk, Igor V. Sherstov

Published May 16, 2026• 1 citation
Publisher

Abstract

Abstract We presented the first experimental realization of ion trapping in a microfabricated surface ion trap in the Russian Federation. We designed and modeled an asymmetrical surface ion trap, simulating the pseudopotential and confinement of a 174Yb+ ion. Based on this design, a planar trap was manufactured and successfully tested, demonstrating stable confinement of a single 174Yb+ ion and the formation of a linear ion chain. The results confirm the validity of the design and modeling, marking a key step toward scalable trapped‑ion platforms in Russia.

DOI
10.1134/s1062873826700991

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•Jun 16, 2013•0 citations
Abstract We presented the first experimental realization of ion trapping in a microfabricated surface ion trap in the Russian Federation. We designed and modeled an asymmetrical surface ion trap, simulating the pseudopotential and confinement of a 174Yb+ ion. Based on this design, a planar trap was manufactured and successfully tested, demonstrating stable confinement of a single 174Yb+ ion and the formation of a linear ion chain. The results confirm the validity of the design and modeling, marking a key step toward scalable trapped‑ion platforms in Russia.
We present a segmented linear surface electrode ion trap design that can be used for various applications in optical clocks and quantum computation based on trapped 171Yb+ ions. Our simulations show that calculated trap depth can reach up to several electronvolts and that the pseudopotential minimum of the trap is located above the trap surface at a distance greater than 80 μm. The described pseudopotential simulations and calculations of different trap parameters can be used to design the planar trap with required parameters. This design could be scaled to store a long chain of ions and used for quantum logic applications as well.
Trapped atomic ions are the leading candidate to act as individual quantum bits in a large quantum information processing system. Ion traps can be conformed to a two-dimensional surface, which provides a way to increase the number of ions while maintaining the ability to move individual ions in a two-dimensional grid. However, surface traps tend to suffer from shallow trap depths and higher motional heating rates. In this work, we report the design, fabrication, and testing of a simple gold-on-fused-silica ion trap optimized for a deep trapping potential and stable motional modes. The desirable trap characteristics include long lifetime, fully-compensated micromotion, and high secular trap frequencies that were measured using a trapped and cooled 174 Yb + ion. This trap design can be integrated with an optical cavity to enhance the ion-photon coupling.
We present the design, fabrication and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than 10 6 round-trip shuttles without ion loss. By minimizing the direct line of sight between trapped ions and dielectric surfaces, negligible day-to-day and trap-to-trap variations are observed. In addition to high-fidelity single-ion shuttling, multiple-ion chains survive splitting, ion-position swapping and recombining routines. The development of two-dimensional trapping structures is an important milestone for ion-trap quantum computing and quantum simulations.
Ions trapped in a quadrupole Paul trap have been considered one of the strong physical candidates to implement quantum information processing. This is due to their long coherence time and their capability to manipulate and detect individual quantum bits (qubits). In more recent years, microfabricated surface ion traps have received more attention for large-scale integrated qubit platforms. This paper presents a microfabrication methodology for ion traps using micro-electro-mechanical system (MEMS) technology, including the fabrication method for a 14 µm-thick dielectric layer and metal overhang structures atop the dielectric layer. In addition, an experimental procedure for trapping ytterbium (Yb) ions of isotope 174 (174Yb+) using 369.5 nm, 399 nm, and 935 nm diode lasers is described. These methodologies and procedures involve many scientific and engineering disciplines, and this paper first presents the detailed experimental procedures. The methods discussed in this paper can easily be extended to the trapping of Yb ions of isotope 171 (171Yb+) and to the manipulation of qubits.
Ions trapped in a quadrupole Paul trap have been considered one of the strong physical candidates to implement quantum information processing. This is due to their long coherence time and their capability to manipulate and detect individual quantum bits (qubits). In more recent years, microfabricated surface ion traps have received more attention for large-scale integrated qubit platforms. This paper presents a microfabrication methodology for ion traps using micro-electro-mechanical system (MEMS) technology, including the fabrication method for a 14 µm-thick dielectric layer and metal overhang structures atop the dielectric layer. In addition, an experimental procedure for trapping ytterbium (Yb) ions of isotope 174 (174Yb+) using 369.5 nm, 399 nm, and 935 nm diode lasers is described. These methodologies and procedures involve many scientific and engineering disciplines, and this paper first presents the detailed experimental procedures. The methods discussed in this paper can easily be extended to the trapping of Yb ions of isotope 171 (171Yb+) and to the manipulation of qubits.
Trapped ions within Paul traps have shown to be a promising architecture in the realisation of a quantum information processor together with the ability of providing quantum simulations. Linear Paul traps have demonstrated long coherence times with ions being well isolated from the environment, single and multi-qubit gates and the high fidelity detection of states. The scalability to large number of qubits, incorporating all the previous achievements requires an array of linear ion traps. Microfabrication techniques allow for fabrication and micron level accuracy of the trap electrode dimensions through photolithography techniques. The first part of this thesis presents the experiential setup and trapping of Yb+ ions needed to test large ion trap arrays. This include vacuum systems that can host advanced symmetric and asymmetric ion traps with up to 90 static voltage control electrodes. Demonstration of a single trapped Yb+ ion within a two-layer macroscopic ion trap is presented. with an ion-electrode distance of 310(10) µm. The anomalous heating rate and spectral noise density of the trap was measured, a main form of decoherence within ion traps. The second half of this thesis presents the design and fabrication of multi-layer asymmetric ion traps. This allows for isolated electrodes that cannot be accessed via surface pathways, allowing for higher density of electrodes as well as creating novel trap designs that allow for the potential of quantum simulations to be demonstrated. These include two-dimensional lattices and ring trap designs in which the isolated electrodes provide more control in the ion position. For the microfabrication of these traps I present a novel high-aspect ratio electroplated electrode design that provides shielding of the dielectric layer. This provides a means to mitigate stray electric field due to charge build up on the dielectric surfaces. Electrical testing of the trap structures was performed to test bulk breakdown and surface flashover of the ion trap architectures. Results showed sufficient isolation between electrodes for both radio frequency and static breakdown. Surface flashover voltage measurements over the dielectric layer showed an improvement of more than double over previous results using a new fabrication technique. This will allow for more powerful ion trap chips needed for the next generation of microfabricated ion trap arrays for scalable quantum technologies.