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arXiv:1105.1834 · New Journal of Physics

Design, fabrication and experimental demonstration of junction surface ion traps

D L Moehring, C Highstrete, Daniel Stick, K M Fortier, R Haltli, C Tigges, M G Blain

Published Jul 29, 2011• 93 citations
arXivHTMLPDF

Abstract

We present the design, fabrication and experimental implementation of surface ion traps with Y-shaped junctions. The traps are designed to minimize the pseudopotential variations in the junction region at the symmetric intersection of three linear segments. We experimentally demonstrate robust linear and junction shuttling with greater than 10 6 round-trip shuttles without ion loss. By minimizing the direct line of sight between trapped ions and dielectric surfaces, negligible day-to-day and trap-to-trap variations are observed. In addition to high-fidelity single-ion shuttling, multiple-ion chains survive splitting, ion-position swapping and recombining routines. The development of two-dimensional trapping structures is an important milestone for ion-trap quantum computing and quantum simulations.

DOI
10.1088/1367-2630/13/7/075018

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We demonstrate a two-dimensional 11-zone ion trap array, where individual laser-cooled atomic ions are stored, separated, shuttled, and swapped. The trap geometry consists of two linear rf-ion trap sections that are joined at a 90° angle to form a T-shaped structure. We shuttle a single ion around the corners of the T-junction and swap the positions of two crystallized ions using voltage sequences designed to accommodate the nontrivial electrical potential near the junction. Full two-dimensional control of multiple ions demonstrated in this system may be crucial for the realization of scalable ion trap quantum computation and the implementation of quantum networks.
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Abstract Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. In this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
We describe the use of laser-enhanced etching of fused silica in order to build multilayer ion traps. This technique offers high precision of both machining and alignment of adjacent wafers. As examples of designs taking advantage of this possibility, we describe traps for realizing two key elements of scaling trapped ion systems. The first is a trap for a cavity-QED interface between single ions and photons, in which the fabrication allows shapes that provide good electrostatic shielding of the ion from charge buildup on the mirror surfaces. The second incorporates two X-junctions allowing two-dimensional shuttling of ions. Here, we are able to investigate designs which explore a trade-off between pseudopotential barriers and confinement at the junction center. In both cases, we illustrate the design constraints arising from the fabrication.