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Exploring Acoustic Couplings to the SiV center in diamond

Michael Aaron Haas

Published Jan 1, 2025• 0 citations
OpenAlex

Abstract

The negatively charged Silicon Vacancy (SiV) center in diamond has shown extraordinary promise for quantum information applications, in particular quantum networking, due to its long-lived spin memory and high-cooperativity spin-photon interface. In addition to these excellent demonstrations towards quantum networking, the SiV center has also been demonstrated to exhibit a large susceptibility to acoustic phonons. While this susceptibility is typically considered a drawback for necessitating low-temperature operation, it also presents an opportunity to study the strong interactions of SiV centers with acoustic fields. In this thesis, we will discuss several results that focus on the integration of SiV centers with diamond nanostructures with interesting acoustic properties. Through this integration, we will show both how the SiV center can be used as an unprecedented probe of these engineered acoustic environments and conversely how controlling the acoustic environment can be used to unlock new potential for SiV center based quantum networks. Together, these results point towards the SiV center as an exciting candidate for realizing novel hybrid quantum systems composed of photon-mediated quantum networks in the optical domain and phonon-mediated quantum systems in the microwave domain.

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Realization of physical systems for quantum information processing fundamentally rests on the ability to generate entanglement among many quantum bits. To this end, solid state quantum systems are often considered a scalable approach due to the relative ease of generating of a large number of individual qubits. However, realizing strong coherent interactions that dominate decoherence processes in the solid state environment is a formidable challenge that has continued to motivate the investigation of new physical systems to store quantum information and new mechanisms to achieve controllable interactions. This thesis takes steps in these directions with diamond color centers, which can store optically accessible quantum information in their electronic spin. We study color center spins as acoustic two level systems, and consider whether their interaction with single phonons in diamond can be engineered to be coherent. Through spectroscopy of color centers in diamond nanomechanical devices and follow-up theoretical work, we identify the negatively charged silicon vacancy (SiV) color center as a promising candidate for phonon-mediated quantum information processing. In the process, an electromechanical device platform capable of tuning the strain environment of color centers is developed. It is used to mitigate thermal decoherence of the SiV spin and demonstrate photon-mediated quantum interference between two SiV centers on a diamond chip, highlighting the utility of nanomechanical devices for photonic quantum networks. Finally, we present high quality factor, wavelength scale acoustic resonators in diamond using phononic crystals towards a coherent interface between SiV centers and single phonons.

•May 16, 2019•0 citations

Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

Денис Дмитриевич Сукачев, Alp Sipahigil, C. T. Nguyen +4 more

The negatively charged silicon-vacancy (SiV^{-}) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼250 ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV^{-} electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV^{-} symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV^{-} spin with 89% fidelity. Coherent control of the SiV^{-} spin with microwave fields is used to demonstrate a spin coherence time T_{2} of 13 ms and a spin relaxation time T_{1} exceeding 1 s at 100 mK. These results establish the SiV^{-} as a promising solid-state candidate for the realization of quantum networks.

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Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.

Bulletin of the American Physical Society•Mar 9, 2018•0 citations

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The silicon-vacancy centre in diamond for quantum information processing

Benjamin Pingault

Atomic defects in solids offer access to atom-like quantum properties without complex trapping methods while displaying a rich physics due to interactions with their solid-state environment. Such properties have made them an advantageous building block for quantum information processing, in particular to construct a quantum network, where information would be encoded in spins and transferred between nodes through photons. Among defects in solids, the negatively charged silicon-vacancy centre in diamond (SiV$^{−}$) has attracted attention for its very promising optical properties for such a network. In this thesis, we investigate the spin properties of the silicon-vacancy centre as a potential spin-photon interface. First, we use resonant excitation of an SiV$^{−}$ centre in an external magnetic field to selectively address different electronic states and analyse the resulting fluorescence. We find evidence of selection rules in the optical transitions revealing that the centre possesses an electronic spin S = 1/2. Making use of the dependence of such selection rules on the applied magnetic field orientation, we resonantly drive two optical transitions forming a $\Lambda$-scheme. In the double resonance condition, we achieve coherent population trapping, whereby the SiV$^{−}$ is pumped into a dark state corresponding to a superposition of the two addressed ground states of opposite spin. This technique allows us to evaluate the coherence time of the dark state and hence of the spin, while demonstrating the possibility of all-optical control of the spin when a $\Lambda$-scheme is available. We then use resonant optical pulses to initialise and read out the spin state of a single SiV$^{−}$. By tuning a microwave pulse into resonance between two ground states of opposite spin, we demonstrate optically detected magnetic resonance. Subsequently, by varying the duration of a resonant microwave pulse, we achieve coherent control of a single SiV$^{−}$ electronic spin. Through Ramsey interferometry, we measure a spin dephasing time of 115 $\pm$ 9 ns. We then investigate interactions of the SiV$^{−}$ with its environment. We analyse the hyperfine interaction of the SiV$^{−}$ spin with the nuclear spin of $^{29}$Si, with a view to taking advantage of the long-lived nuclear spin in the future. We show that single-phonon-mediated excitations between electronic states of the SiV$^{−}$ are the dominant spin dephasing and population decay mechanism and evaluate how external strain alters optical selection rules and can be used to improve the coherence time of the spin.

•Nov 7, 2017•1 citation

Quantum Nano-Jewelry: Plasmonic Addressing of Single-Photon Emitters in High-Quality Diamond Nanostructures

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The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.

Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)•Jun 1, 2019•0 citations
The negatively charged Silicon Vacancy (SiV) center in diamond has shown extraordinary promise for quantum information applications, in particular quantum networking, due to its long-lived spin memory and high-cooperativity spin-photon interface. In addition to these excellent demonstrations towards quantum networking, the SiV center has also been demonstrated to exhibit a large susceptibility to acoustic phonons. While this susceptibility is typically considered a drawback for necessitating low-temperature operation, it also presents an opportunity to study the strong interactions of SiV centers with acoustic fields. In this thesis, we will discuss several results that focus on the integration of SiV centers with diamond nanostructures with interesting acoustic properties. Through this integration, we will show both how the SiV center can be used as an unprecedented probe of these engineered acoustic environments and conversely how controlling the acoustic environment can be used to unlock new potential for SiV center based quantum networks. Together, these results point towards the SiV center as an exciting candidate for realizing novel hybrid quantum systems composed of photon-mediated quantum networks in the optical domain and phonon-mediated quantum systems in the microwave domain.
Realization of physical systems for quantum information processing fundamentally rests on the ability to generate entanglement among many quantum bits. To this end, solid state quantum systems are often considered a scalable approach due to the relative ease of generating of a large number of individual qubits. However, realizing strong coherent interactions that dominate decoherence processes in the solid state environment is a formidable challenge that has continued to motivate the investigation of new physical systems to store quantum information and new mechanisms to achieve controllable interactions. This thesis takes steps in these directions with diamond color centers, which can store optically accessible quantum information in their electronic spin. We study color center spins as acoustic two level systems, and consider whether their interaction with single phonons in diamond can be engineered to be coherent. Through spectroscopy of color centers in diamond nanomechanical devices and follow-up theoretical work, we identify the negatively charged silicon vacancy (SiV) color center as a promising candidate for phonon-mediated quantum information processing. In the process, an electromechanical device platform capable of tuning the strain environment of color centers is developed. It is used to mitigate thermal decoherence of the SiV spin and demonstrate photon-mediated quantum interference between two SiV centers on a diamond chip, highlighting the utility of nanomechanical devices for photonic quantum networks. Finally, we present high quality factor, wavelength scale acoustic resonators in diamond using phononic crystals towards a coherent interface between SiV centers and single phonons.
The negatively charged silicon-vacancy (SiV^{-}) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼250 ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV^{-} electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV^{-} symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV^{-} spin with 89% fidelity. Coherent control of the SiV^{-} spin with microwave fields is used to demonstrate a spin coherence time T_{2} of 13 ms and a spin relaxation time T_{1} exceeding 1 s at 100 mK. These results establish the SiV^{-} as a promising solid-state candidate for the realization of quantum networks.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.
The construction of a quantum internet, an interconnected network which can distribute and store quantum states, is an essential step towards the development of next generation quantum technologies, including unconditionally secure communication, enhanced metrology, and distributed quantum computing. Development of these networks require functional nodes consisting of stationary registers with the capability of high-fidelity quantum information processing and storage, which efficiently interface with photonic qubits. This thesis outlines one emerging platform for building a quantum network node using the silicon-vacancy color center in diamond (SiV). Although previous work has established the SiV as a superior optical emitter capable of strong light-matter coupling, its feasibility as a quantum memory has remained elusive, primarily due to coupling to thermal phonons. This suggests two branching research directions: one where this coupling is investigated and characterized as a nanoscale sensor, and one where this coupling is supressed in order to realize the SiV as a quantum information processor. This thesis begins by highlighting the extreme phonon sensitivity as a metrological tool, where an ensemble of SiVs are used as an all-optical thermometer, capable of \SI{70}{\milli\kelvin} precision at room temperature. When incorporated into nanodiamonds, the sensing properties deviate by less than 1%1\%1% between nanodiamonds, enabling calibration-free thermometry for sensing and control of complex nanoscale systems. For quantum information tasks, coherent control of the SiV electronic spin qubit is enabled by suppressing phonon-induced dephasing by five orders of magnitude at temperatures below \SI{500}{\milli\kelvin}. By aligning the magnetic field along the silicon-vacancy symmetry axis, optical transitions are highly spin-conserving, allowing for single-shot readout of the qubit with high fidelity. This coherent control is used to demonstrate a spin coherence time T2>T_2 >T2​> \SI{13}{\milli\second} and spin relaxation time T1>T_1 >T1​> \SI{1}{\second} at \SI{100}{\milli\kelvin}. Finally, SiV quantum memories are packaged into a fully integrated quantum network node by incorporating SiV qubits into nanophotonic cavities. The efficient SiV-cavity coupling (with cooperativity C>30C > 30C>30) provides a nearly-deterministic interface between photons and the spin qubit, which enables heralded single-photon storage. Coherent coupling to nearby \cnuc\ nuclear spins (with nearly second-long coherence times) enables multi-qubit registers and paves the way towards large-scale quantum networks.
Atomic defects in solids offer access to atom-like quantum properties without complex trapping methods while displaying a rich physics due to interactions with their solid-state environment. Such properties have made them an advantageous building block for quantum information processing, in particular to construct a quantum network, where information would be encoded in spins and transferred between nodes through photons. Among defects in solids, the negatively charged silicon-vacancy centre in diamond (SiV−^{−}−) has attracted attention for its very promising optical properties for such a network. In this thesis, we investigate the spin properties of the silicon-vacancy centre as a potential spin-photon interface. First, we use resonant excitation of an SiV−^{−}− centre in an external magnetic field to selectively address different electronic states and analyse the resulting fluorescence. We find evidence of selection rules in the optical transitions revealing that the centre possesses an electronic spin S = 1/2. Making use of the dependence of such selection rules on the applied magnetic field orientation, we resonantly drive two optical transitions forming a Λ\LambdaΛ-scheme. In the double resonance condition, we achieve coherent population trapping, whereby the SiV−^{−}− is pumped into a dark state corresponding to a superposition of the two addressed ground states of opposite spin. This technique allows us to evaluate the coherence time of the dark state and hence of the spin, while demonstrating the possibility of all-optical control of the spin when a Λ\LambdaΛ-scheme is available. We then use resonant optical pulses to initialise and read out the spin state of a single SiV−^{−}−. By tuning a microwave pulse into resonance between two ground states of opposite spin, we demonstrate optically detected magnetic resonance. Subsequently, by varying the duration of a resonant microwave pulse, we achieve coherent control of a single SiV−^{−}− electronic spin. Through Ramsey interferometry, we measure a spin dephasing time of 115 ±\pm± 9 ns. We then investigate interactions of the SiV−^{−}− with its environment. We analyse the hyperfine interaction of the SiV−^{−}− spin with the nuclear spin of 29^{29}29Si, with a view to taking advantage of the long-lived nuclear spin in the future. We show that single-phonon-mediated excitations between electronic states of the SiV−^{−}− are the dominant spin dephasing and population decay mechanism and evaluate how external strain alters optical selection rules and can be used to improve the coherence time of the spin.
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.