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Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)

Quantum Nano-Jewelry: Plasmonic Addressing of Single-Photon Emitters in High-Quality Diamond Nanostructures

Tzach Jaffe, Nina Felgen, Lior Gal, Cyril Popov, Johann Peter Reithmaier, Meir Orenstein

Published Jun 1, 2019• 0 citations
Publisher

Abstract

The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.

DOI
10.1109/cleoe-eqec.2019.8872917

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The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.
Coherent exchange of single photons is at the heart of applied Quantum Optics. The negatively-charged silicon vacancy center in diamond is among most promising sources for coherent single photons. Its large Debye-Waller factor, short lifetime and extraordinary spectral stability is unique in the field of solid-state single photon sources. However, the excitation and detection of individual centers requires high numerical aperture optics which, combined with the need for cryogenic temperatures, puts technical overhead on experimental realizations. Here, we investigate a hybrid quantum photonics platform based on silicon-vacancy center in nanodiamonds and metallic bullseye antenna to realize a coherent single-photon interface that operates efficiently down to low numerical aperture optics with an inherent resistance to misalignment.
The negatively charged silicon-vacancy (SiV${}^{\ensuremath{-}}$) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a $\ensuremath{\langle}111\ensuremath{\rangle}$ aligned split-vacancy structure with D3d{\mathrm{D}}_{3\mathrm{d}}D3d​ symmetry. Furthermore, we identify an additional electronic level and evidence for the presence of dynamic Jahn-Teller effects in the center's 738-nm optical resonance.
Silicon-vacancy (SiV) color centers in diamond offer novel possibilities to probe light-matter interaction in nano-quantum optics and provide a scalable quantum system suitable for single-photon emission. However, their effective count-rate is still limited by non-radiative decay channels, radiation at wide angles and total internal reflection at the diamond interface. Recently optical antennas have been utilized in order to modify light-matter interaction at the nanoscale. Acting as resonators, they are able to increase the spontaneous emission rate of quantum emitters by several orders of magnitude in a broad spectral range. Because coupling a quantum emitter to a nano-antenna requires close proximity between the two systems, we implant Si ions on very thin diamond membranes that provide the required dimension for near-field interaction in a controlled manner and investigate the optical properties of SiV color centers in such diamond membranes. We consider gold nano-cones as nano-antennas, fabricated by focused electron beam induced deposition (EBID), followed by sputtering and focused ion beam (FIB) milling. The finite-difference time-domain (FDTD) calculations show that gold nano-cones can provide more than four orders of magnitude enhancement in the Purcell factor with an antenna efficiency (AE) of 80%.
Optical sources that deliver single photons on demand play a key role in quantum cryptography and optical quantum computations. At present, color centers in wide-bandgap semiconductors, such as the nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers in diamond, are considered to be the most promising candidates for practical quantum information applications owing to their unique emission properties at room temperature. However, for practical reasons, single-photon sources should be pumped electrically, which is required for integrability, scalability, and energy efficiency. However, diamond and related wide-bandgap semiconductor materials are at the interface between insulators and semiconductors, which makes electrical excitation of color centers very challenging. Here, we report on our progress in the understanding of single-photon electroluminescence of color centers in diamond, discuss different factors affecting the brightness of these emitter under electrical excitation, and study how to improve the performance of electrically- pumped single-photon sources based on color centers in diamond.