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Frontiers in Optics

Highly-Efficient Extraction of Single Photons from Single SiV Centers in Diamond Using Plasmonic Nanoantenna

Ilia M. Fradkin, Mario Agio, Dmitry Yu. Fedyanin

Published Jan 1, 2020• 1 citation
Publisher

Abstract

Diamond-based single-photon sources suffer from poor collection efficiency. Here, we present a plasmonic nanoantenna that gives the possibility to overcome this problem and extract about 90% of photons emitted by a silicon vacancy in diamond.
DOI
10.1364/fio.2020.fw1c.2

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The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality single-photon source for quantum information processing and quantum electrodynamics applications[1]. The dipole moment of the SiV is aligned predominantly along its symmetry axis which connects the interstitial silicon atom and the two adjacent vacancies with 4 possible-orientations. Since the SiV addressing is done optically the demand for efficient excitation and optical out-coupling is essential for realizing high-quality single-photon sources. In addition to relatively low extraction efficiency when embedded in bulk diamond, attributed to total internal reflection, in a-oriented diamond, which is commonly used, each SiV possesses a dominant dipole component aligned normal to the diamond-air interface. Thus, resulting in a poor optical out-coupling since a dipole radiates primarily into the plane orthogonal to its axis.
The negatively charged silicon-vacancy center (SiV) in diamond is a potential high-quality source of single-indistinguishable photons for quantum information processing and quantum electrodynamics applications[1]. Protected by inversion symmetry, the SiV possesses bright narrow-band and spectrally stable optical transition. However, when embedded in bulk diamond, this emitter suffers from relatively low extraction efficiency attributed to total internal reflection as well as nondeterministic location. On the other hand, its implementation in nanodiamonds or nanostructures prepared by a top-down approach can mitigate the issue of total internal reflection, but impeded by optical dephasing owing to their degraded surface quality.
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Single silicon vacancy (SiV) color centers in diamond have recently shown the ability for high brightness, narrow bandwidth, room temperature single photon emission. This work develops a model describing the three level population dynamics of single SiV centers in diamond nanocrystals on iridium surfaces including an intensity dependent de-shelving process. Furthermore, we investigate the brightness and photostability of single centers and find maximum single photon rates of 6.2 Mcps under continuous excitation. We investigate the collection efficiency of the fluorescence and estimate quantum efficiencies of the SiV centers.