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Quantum Nanophotonic Materials, Devices, and Systems

Exploring ultrafast single-photon emission of silicon-vacancy color centers in diamond nano-membranes coupled with gold nano-cones

Haritha Kambalathmana, Assegid M. Flatae, S. Lagomarsino, Hossam Galal, Francesco Tantussi, Gabriele Carmine Messina, Eckhard Woerner, Christoph Wild, N. Gelli, S. Sciortino, L. Giuntini, Francesco De Angelis, Mario Agio

Published Sep 3, 2019• 6 citations

Abstract

Silicon-vacancy (SiV) color centers in diamond offer novel possibilities to probe light-matter interaction in nano-quantum optics and provide a scalable quantum system suitable for single-photon emission. However, their effective count-rate is still limited by non-radiative decay channels, radiation at wide angles and total internal reflection at the diamond interface. Recently optical antennas have been utilized in order to modify light-matter interaction at the nanoscale. Acting as resonators, they are able to increase the spontaneous emission rate of quantum emitters by several orders of magnitude in a broad spectral range. Because coupling a quantum emitter to a nano-antenna requires close proximity between the two systems, we implant Si ions on very thin diamond membranes that provide the required dimension for near-field interaction in a controlled manner and investigate the optical properties of SiV color centers in such diamond membranes. We consider gold nano-cones as nano-antennas, fabricated by focused electron beam induced deposition (EBID), followed by sputtering and focused ion beam (FIB) milling. The finite-difference time-domain (FDTD) calculations show that gold nano-cones can provide more than four orders of magnitude enhancement in the Purcell factor with an antenna efficiency (AE) of 80%.

DOI: 10.1117/12.2528749

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Silicon-vacancy (SiV) color centers in diamond offer novel possibilities to probe light-matter interaction in nano-quantum optics and provide a scalable quantum system suitable for single-photon emission. However, their effective count-rate is still limited by non-radiative decay channels, radiation at wide angles and total internal reflection at the diamond interface. Recently optical antennas have been utilized in order to modify light-matter interaction at the nanoscale. Acting as resonators, they are able to increase the spontaneous emission rate of quantum emitters by several orders of magnitude in a broad spectral range. Because coupling a quantum emitter to a nano-antenna requires close proximity between the two systems, we implant Si ions on very thin diamond membranes that provide the required dimension for near-field interaction in a controlled manner and investigate the optical properties of SiV color centers in such diamond membranes. We consider gold nano-cones as nano-antennas, fabricated by focused electron beam induced deposition (EBID), followed by sputtering and focused ion beam (FIB) milling. The finite-difference time-domain (FDTD) calculations show that gold nano-cones can provide more than four orders of magnitude enhancement in the Purcell factor with an antenna efficiency (AE) of 80%.

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Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.

We use crystalline silicon (Si) antennas to efficiently extract broadband single-photon fluorescence from shallow nitrogen-vacancy (NV) centers in diamond into free space. Our design features relatively easy-to-pattern high-index Si resonators on the diamond surface to boost photon extraction by overcoming total internal reflection and Fresnel reflection at the diamond-air interface and providing modest Purcell enhancement, without etching or otherwise damaging the diamond surface. In simulations, ∼17 times more single photons are collected from a single NV center compared to the case without the antenna; in experiments, we observe an enhancement of ∼9 times, limited by spatial alignment between the NV and the antenna. Our approach can be readily applied to other color centers in diamond, and more generally to the extraction of light from quantum emitters in wide-bandgap materials.

Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quantum communication, and also as temperature probes for sensing. Here, we discussed strategies for the fabrication of SiV centers in diamond based on Si-ion implantation followed by thermal activation. SiV color centers in high-quality single crystals have the best optical properties, but polycrystalline micro and nanostructures are interesting for applications in nano-optics. Moreover, we discuss the photoluminescence properties of SiV centers in phosphorous-doped diamond, which are relevant for the creation of electroluminescent devices, and nanophotonics strategies to improve the emission characteristics of the SiV centers. Finally, the optical properties of such centers at room and high temperatures show the robustness of the center and give perspectives for temperature-sensing applications.

Single-photon sources represent a key enabling technology in quantum optics, and single color centers in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen-vacancy (NV) centers are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centers emitting in the near-infra red (NIR). In the present work, we report on the coupling of native NIR-emitting centers in high-quality single-crystal diamond with solid immersion lens (SIL) structures fabricated by focused ion beam (FIB) lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.