The silicon-vacancy (SiV-) color center in diamond has attracted attention because of its unique optical properties. It exhibits spectral stability and indistinguishability that facilitate efficient generation of photons capable of demonstrating quantum interference. Here we show optical initialization and readout of electronic spin in a single SiV- center with a spin relaxation time of T1=2.4±0.2 ms. Coherent population trapping (CPT) is used to demonstrate coherent preparation of dark superposition states with a spin coherence time of T2⋆=35±3 ns. This is fundamentally limited by orbital relaxation, and an understanding of this process opens the way to extend coherence by engineering interactions with phonons. Hyperfine structure is observed in CPT measurements with the 29Si isotope which allows access to nuclear spin. These results establish the SiV- center as a solid-state spin-photon interface.
Abstract Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essential. Here we report the measurement of optically detected magnetic resonance and the demonstration of coherent control of a single silicon-vacancy centre spin with a microwave field. Using Ramsey interferometry, we directly measure a spin coherence time, T2*, of 115±9 ns at 3.6 K. The temperature dependence of coherence times indicates that dephasing and decay of the spin arise from single-phonon-mediated excitation between orbital branches of the ground state. Our results enable the silicon-vacancy centre spin to become a controllable resource to establish spin-photon quantum interfaces.
The construction of a quantum internet, an interconnected network which can distribute and store quantum states, is an essential step towards the development of next generation quantum technologies, including unconditionally secure communication, enhanced metrology, and distributed quantum computing. Development of these networks require functional nodes consisting of stationary registers with the capability of high-fidelity quantum information processing and storage, which efficiently interface with photonic qubits. This thesis outlines one emerging platform for building a quantum network node using the silicon-vacancy color center in diamond (SiV). Although previous work has established the SiV as a superior optical emitter capable of strong light-matter coupling, its feasibility as a quantum memory has remained elusive, primarily due to coupling to thermal phonons. This suggests two branching research directions: one where this coupling is investigated and characterized as a nanoscale sensor, and one where this coupling is supressed in order to realize the SiV as a quantum information processor. This thesis begins by highlighting the extreme phonon sensitivity as a metrological tool, where an ensemble of SiVs are used as an all-optical thermometer, capable of \SI{70}{\milli\kelvin} precision at room temperature. When incorporated into nanodiamonds, the sensing properties deviate by less than
1% between nanodiamonds, enabling calibration-free thermometry for sensing and control of complex nanoscale systems. For quantum information tasks, coherent control of the SiV electronic spin qubit is enabled by suppressing phonon-induced dephasing by five orders of magnitude at temperatures below \SI{500}{\milli\kelvin}. By aligning the magnetic field along the silicon-vacancy symmetry axis, optical transitions are highly spin-conserving, allowing for single-shot readout of the qubit with high fidelity. This coherent control is used to demonstrate a spin coherence time
T2> \SI{13}{\milli\second} and spin relaxation time
T1> \SI{1}{\second} at \SI{100}{\milli\kelvin}. Finally, SiV quantum memories are packaged into a fully integrated quantum network node by incorporating SiV qubits into nanophotonic cavities. The efficient SiV-cavity coupling (with cooperativity
C>30) provides a nearly-deterministic interface between photons and the spin qubit, which enables heralded single-photon storage. Coherent coupling to nearby \cnuc\ nuclear spins (with nearly second-long coherence times) enables multi-qubit registers and paves the way towards large-scale quantum networks.
In this Letter, we demonstrate initialization and readout of nuclear spins via a negatively charged silicon-vacancy (SiV) electron spin qubit. Under Hartmann-Hahn conditions the electron spin polarization is coherently transferred to the nuclear spin. The readout of the nuclear polarization is observed via the fluorescence of the SiV. We also show that the coherence time of the nuclear spin (6 ms) is limited by the electron spin-lattice relaxation due to the hyperfine coupling to the electron spin. This Letter paves the way toward realization of building blocks of quantum hardware with an efficient spin-photon interface based on the SiV color center coupled to a long lasting nuclear memory.
The negatively charged tin-vacancy center in diamond (SnV−) is a highly promising candidate for next-generation long-distance quantum networks, owing to its bright emission, robustness against electronic noise, and extended spin coherence times at higher temperatures. We demonstrate the measurement of a single SnV− electronic spin with a single-shot readout fidelity of 87.4%, which can be further enhanced to 98.5% using conditional readout. Our findings show that SnV− centers are compatible with rapid microwave spin control, overcoming the typical trade-off between optical readout and spin control found in group-IV centers in diamond. Additionally, we investigate measurement-induced dephasing through weak quantum measurement, shedding light on the fundamental interplay between measurement and decoherence in quantum mechanics, and utilizing the qubit’s spin coherence as a metrological tool. These advancements represent a significant milestone in SnV− based quantum technologies, providing techniques and insights widely applicable to solid-state quantum emitters.
Atomic defects in solids offer access to atom-like quantum properties without complex trapping methods while displaying a rich physics due to interactions with their solid-state environment. Such properties have made them an advantageous building block for quantum information processing, in particular to construct a quantum network, where information would be encoded in spins and transferred between nodes through photons. Among defects in solids, the negatively charged silicon-vacancy centre in diamond (SiV
−) has attracted attention for its very promising optical properties for such a network. In this thesis, we investigate the spin properties of the silicon-vacancy centre as a potential spin-photon interface. First, we use resonant excitation of an SiV
− centre in an external magnetic field to selectively address different electronic states and analyse the resulting fluorescence. We find evidence of selection rules in the optical transitions revealing that the centre possesses an electronic spin S = 1/2. Making use of the dependence of such selection rules on the applied magnetic field orientation, we resonantly drive two optical transitions forming a
Λ-scheme. In the double resonance condition, we achieve coherent population trapping, whereby the SiV
− is pumped into a dark state corresponding to a superposition of the two addressed ground states of opposite spin. This technique allows us to evaluate the coherence time of the dark state and hence of the spin, while demonstrating the possibility of all-optical control of the spin when a
Λ-scheme is available. We then use resonant optical pulses to initialise and read out the spin state of a single SiV
−. By tuning a microwave pulse into resonance between two ground states of opposite spin, we demonstrate optically detected magnetic resonance. Subsequently, by varying the duration of a resonant microwave pulse, we achieve coherent control of a single SiV
− electronic spin. Through Ramsey interferometry, we measure a spin dephasing time of 115
± 9 ns. We then investigate interactions of the SiV
− with its environment. We analyse the hyperfine interaction of the SiV
− spin with the nuclear spin of
29Si, with a view to taking advantage of the long-lived nuclear spin in the future. We show that single-phonon-mediated excitations between electronic states of the SiV
− are the dominant spin dephasing and population decay mechanism and evaluate how external strain alters optical selection rules and can be used to improve the coherence time of the spin.