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Kryogeeniset teknologiat suprajohtaville kvanttilaitteille

Joel Hätinen

Published Jan 1, 2026• 0 citations
OpenAlex

Abstract

Low-temperature refrigerators cool systems down to cryogenic temperatures near absolute zero, where thermal noise and decoherence are suppressed. This allows quantum phases, such as superconductivity, to emerge in certain materials and enables the harnessing of individual quantum states for scientific and high-performance applications. However, the refrigerators used for these purposes are large and rely on cryoliquids, such as scarce and expensive 3He, which can be a limiting factor depending on the technological application. To enable more scalable, costeffective cryogenic platforms, new refrigeration technologies must be developed. To this end, chip-scale coolers based on superconducting tunnel junctions have been envisioned to provide a fully solid-state alternative. Proof-of-principle operation of these coolers has been demonstrated at temperatures below 1.5 K, but to link them with commercially available 4He pulse tube cryocoolers, stage operating above 2.0 K is required. Additionally, thermally isolating and electrically conducting methods are needed to cascade coolers operating at different temperature ranges. In this thesis, the fundamental components of a multi-stage chip-scale cooler operating at temperatures compatible with 4He pulse tube cryocoolers are developed. A superconducting flipchip assembly fabricated with In-bumps was characterized in the sub-kelvin temperature range, and the inter-chip thermal resistance was found to be suitable for chip-scale cooling applications. A through-chip signal routing method utilizing ALD TiN-based TSVs was developed, and the demonstrated critical temperature of 2.0 K enables dissipationless DC transport for multi-chip assemblies, such as cascaded coolers. Additionally, ALD MoCx was shown to exhibit a superconducting transition temperature up to 4.4 K and high conformality, showing promise as a TSV-compatible material. The key achievement of electronic cooling of Al thin film from a bath temperature of 2.4 K down to 1.6 K was demonstrated using Nb-based superconducting tunnel junctions, probed by an onchip junction thermometer. Thermal model calculations highlighted the emergence of superconductivity in the Al beneath the cooler junctions, persisting up to a bath temperature of 2.4 K: one kelvin higher than the nominal critical temperature of the Al thin film. The single-stage cooler operating above 2.0 K enables solid-state on-chip cooling from 4He pulse-tube compatible temperature without the use of magnetic fields. Additionally, Al- and V-based tunnel junctions were fabricated at the wafer scale using degenerately doped Si as the normal electrode. The junctions exhibited suitable low-temperature electrical characteristics for cooling applications. From superconducting interconnects to tunnel-junction components supporting high cooling power density above 1 K, the achievements presented in this thesis enable modular design of chip-scale cascade coolers. This technology is envisioned to support the scaling of several superconducting quantum devices from proof-of-principle to multi-component systems beyond experimental lab environments.

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Efficient electronic cooling by niobium-based superconducting tunnel junctions

Joel Hätinen, Alberto Ronzani, R. P. Loreto +15 more

Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on superconducting tunnel junctions have been anticipated to provide a solution, but reaching the necessary above the 1-K operation temperature range has remained a goal out of reach for several decades. We show efficient electronic refrigeration by $\mathrm{Al}$-${\mathrm{Al}\mathrm{O}}_{x}$-$\mathrm{Nb}$ superconducting tunnel junctions starting from bath temperatures above 2 K. The junctions can deliver electronic cooling power up to approximately $\mathrm{mW}/{\mathrm{mm}}^{2}$, which enables us to demonstrate tunnel-current-driven electron temperature reduction from 2.4 K to below 1.6 K (34% relative cooling) against the phonon bath. Our work shows that the key material of integrated superconducting circuits---niobium---enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip-scale refrigerators and, at the same time, it introduces a new electrothermal tool for quantum heat-transport experiments.

arXiv:2403.08655•Physical Review Applied•Dec 13, 2024•7 citations

Chip-scale cooling of cryogenic microsystems

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Advancements in cryo-enabled fields like space electronics and quantum information increasingly demand efficient cooling of chips down to deep cryogenic temperatures. In this work, we present an overview of recent progress in chip-scale cooling technologies for cryogenic microsystems. We, especially, discuss the underlying operational principles and technological innovations of tunnel junction coolers and adiabatic field refrigeration methods, emphasizing their significance for on-chip cooling and scalable general purpose cooling platforms.

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Suprajohtavan kvanttiteknologian optinen ohjaus

Katja Kohopää

A large-scale quantum computer is one of the main aims for researchers and industry in quantum technology at the moment. The interest in quantum computer development stems from the expectation that it could be used to solve problems that classical supercomputers are not able to. However, to build such useful quantum computers, a significant increase in the number of qubits is required compared to today’s systems. This scale-up requires development in many parts of the quantum computer, including the information transfer between room temperature control electronics and qubits in cryogenic temperature. Currently, information is transferred via metallic coaxial cables that inevitably also introduce a significant heat load to the cryostat. As the cooling power of cryostats is limited, alternatives need to be explored. In this thesis, we focus on optical control of superconducting quantum technology. The idea is to transfer information between room and cryogenic temperature in optical form, via optical fibers that have negligible heat load. Then, using an optical-to-electrical converter (OEC), the optical signal can be converted to electrical form and used to drive superconducting components. Similarly, the output signal can be transformed to optical form and transmitted back to room temperature optically. In this thesis, we study this topic by two distinct parts: disordered superconducting thin films and optical control of Josephson junction arrays. Disordered superconducting thin films are promising materials, e.g., for superconducting nanowire single-photon detectors (SNSPDs) which are one alternative of OECs. Therefore, in this thesis, we studied various disordered films. We explored the effects of ion irradiation on common superconducting materials (Al, Nb, NbN, TiN and MoSi) and demonstrated that ion irradiation increases disorder, i.e., increases normal-state sheet resistance. In addition, it can alter the critical temperature. Furthermore, for MoSi films we noticed that ion irradiation can help mix the materials. In addition, we studied atomic layer deposition (ALD) that is another fabrication method for disordered superconductors. We demonstrated superconductivity in MoC and NbCN films that were fabricated by novel thermal ALD processes. On the other hand, the motivation to study optical control of Josephson junction arrays is that when driven with arbitrary pulse patterns, they act as Josephson arbitrary waveform synthesizers (JAWS) that produce accurate, quantized voltage waveforms in the cryogenic temperature. In this thesis, we demonstrated driving of low critical current Josephson junction arrays with optical pulses that were converted to electrical form using commercial photodiodes. We developed a double-pulse method to study the dynamics of the system and compared the results to simulations. When we varied the time difference between pulses, the results followed expectations and simulations. We were able to drive the junction arrays to multiple Shapiro steps reliably. As a highlight, we demonstrated that the maximum drive frequency of our JAWS setup is significantly higher compared to typical methods that use electrical pulse pattern generators. Therefore, the work presented in this thesis can establish the groundwork for using optical pulses and fast Josephson junction arrays to enable energy-efficient and scalable method to drive superconducting components, such as qubits, that decreases the heat load and aids in the required scale-up for large-scale quantum computing.

•Jan 1, 2026•0 citations

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María Camarasa‐Gómez, Angelo Di Marco, F. W. J. Hekking +3 more

The design and operation of an electronic cooler based on a combination of superconducting tunnel junctions is described. The cascade extraction of hot-quasiparticles, which stems from the energy gaps of two different superconductors, allows for a normal metal to be cooled down to about 100 mK starting from a bath temperature of 0.5 K. We discuss the practical implementation, potential performance, and limitations of such a device.

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Hung Q. Nguyen, M. Meschke, H. Courtois +1 more

Experiments conducted below 0.1 K require expensive, complicated cryogenic apparatus. What if an integrated solid-state device could be used instead? The authors present just such an on-chip refrigerator, based on a superconductor/normal-metal junction, that chills down to 30 mK with remarkable cooling power. This provides a means to reduce thermal noise in e.g. qubits, SQUIPT magnetometers, or the sensitive detectors required for astronomy experiments.

Physical Review Applied•Nov 4, 2014•75 citations

Superconducting thin films and hybrid materials for quantum devices

Sjoerd Telkamp

The performance and coherence of superconducting quantum systems are fundamentally tied to the quality of the materials from which they are built. In superconducting transmon qubits, many loss mechanisms and sources of decoherence originate from material imperfections or unwanted oxide formation. Likewise, semiconductor–superconductor hybrid systems depend on high-quality interfaces to ensure strong coupling between electronic states in the two materials. In such hybrid devices, the accessible operating regime is often dictated by the intrinsic material properties of either the semiconductor or the superconductor. Advancing quantum device performance therefore requires exploring new material systems and optimizing their physical characteristics. In this thesis, we present the development of several superconducting material platforms for quantum technologies, including superconducting qubits, single-photon detectors, and semiconductor superconductor hybrid devices. We focus on the growth and characterization of superconducting films and heterostructures, and we establish clear connections between their material properties and the resulting device performance. First, we will present a novel semiconductor-superconductor hybrid material based on in-situ deposited epitaxial layers of Nb and Al on a shallow InAs quantum well. In this structure, the Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs two dimensional electron gas. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms. Then, we discuss a different approach in the next chapter where we develop a hybrid material based on a molecular beam epitaxy grown InAsSb surface quantum well with an in-situ deposited Nb layer directly on top of the quantum well. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb layer directly on top of the quantum well results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV and a critical current density of 3.75 × 10³A/cm². Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices. In the next chapter, we will focus on establishing a link between Nb film crystal properties and their performance in superconducting circuits. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over 10⁶ at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasi-particle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Then, we explore yet a different material platform by attempting to realize onchip NbTiN single photon detectors on LiNbO₃, an emerging photonic platform with high potential for scalable quantum information processing. We use DC reactive magnetron sputtering to grow high-quality NbTiN thin films and investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature (𝑇𝑐) of 12.3 K grown at a substrate temperature of 825 K. We demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LiNbO3 platform and investigate the obtained interface quality. Finally, we fabricate superconducting nanowire single photon detectors from the NbTiN film on LiNbO₃ and characterize the detector performance. Lastly, we report a gate-tunable Josephson diode effect in hybrid nanowire junctions consisting of a spin-orbit-coupled semiconductor core coated with epitaxial ferromagnetic insulator and superconductor shells. The wires display a hysteretic superconducting window as a function of axial magnetic field. In the superconducting regime, the devices exhibit nonreciprocal current transport, with the diode efficiency showing a strong dependence on back-gate voltage. The effect persists in a remanent magnetization state following a controlled demagnetization procedure, establishing zero-field operation. The combination of results presented in this thesis stress the importance of a material-focused approach in advancing the performance of quantum hardware. The novel hybrid material platforms developed in this thesis expand the operating regime of devices, which could enable future experiments involving gate-tunable superconductivity or topological properties. Similarly, we demonstrate that optimizing superconductor crystal structure benefits quantum devices, such as single-photon detectors and superconducting resonators.

•Jan 1, 2026•0 citations
Low-temperature refrigerators cool systems down to cryogenic temperatures near absolute zero, where thermal noise and decoherence are suppressed. This allows quantum phases, such as superconductivity, to emerge in certain materials and enables the harnessing of individual quantum states for scientific and high-performance applications. However, the refrigerators used for these purposes are large and rely on cryoliquids, such as scarce and expensive 3He, which can be a limiting factor depending on the technological application. To enable more scalable, costeffective cryogenic platforms, new refrigeration technologies must be developed. To this end, chip-scale coolers based on superconducting tunnel junctions have been envisioned to provide a fully solid-state alternative. Proof-of-principle operation of these coolers has been demonstrated at temperatures below 1.5 K, but to link them with commercially available 4He pulse tube cryocoolers, stage operating above 2.0 K is required. Additionally, thermally isolating and electrically conducting methods are needed to cascade coolers operating at different temperature ranges. In this thesis, the fundamental components of a multi-stage chip-scale cooler operating at temperatures compatible with 4He pulse tube cryocoolers are developed. A superconducting flipchip assembly fabricated with In-bumps was characterized in the sub-kelvin temperature range, and the inter-chip thermal resistance was found to be suitable for chip-scale cooling applications. A through-chip signal routing method utilizing ALD TiN-based TSVs was developed, and the demonstrated critical temperature of 2.0 K enables dissipationless DC transport for multi-chip assemblies, such as cascaded coolers. Additionally, ALD MoCx was shown to exhibit a superconducting transition temperature up to 4.4 K and high conformality, showing promise as a TSV-compatible material. The key achievement of electronic cooling of Al thin film from a bath temperature of 2.4 K down to 1.6 K was demonstrated using Nb-based superconducting tunnel junctions, probed by an onchip junction thermometer. Thermal model calculations highlighted the emergence of superconductivity in the Al beneath the cooler junctions, persisting up to a bath temperature of 2.4 K: one kelvin higher than the nominal critical temperature of the Al thin film. The single-stage cooler operating above 2.0 K enables solid-state on-chip cooling from 4He pulse-tube compatible temperature without the use of magnetic fields. Additionally, Al- and V-based tunnel junctions were fabricated at the wafer scale using degenerately doped Si as the normal electrode. The junctions exhibited suitable low-temperature electrical characteristics for cooling applications. From superconducting interconnects to tunnel-junction components supporting high cooling power density above 1 K, the achievements presented in this thesis enable modular design of chip-scale cascade coolers. This technology is envisioned to support the scaling of several superconducting quantum devices from proof-of-principle to multi-component systems beyond experimental lab environments.
Replacing the bulky cryoliquid-based cooling stages of cryoenabled instruments by chip-scale refrigeration is envisioned to disruptively reduce the system size similar to microprocessors did for computers. Electronic refrigerators based on superconducting tunnel junctions have been anticipated to provide a solution, but reaching the necessary above the 1-K operation temperature range has remained a goal out of reach for several decades. We show efficient electronic refrigeration by Al\mathrm{Al}Al-AlOx{\mathrm{Al}\mathrm{O}}_{x}AlOx​-Nb\mathrm{Nb}Nb superconducting tunnel junctions starting from bath temperatures above 2 K. The junctions can deliver electronic cooling power up to approximately mW/mm2\mathrm{mW}/{\mathrm{mm}}^{2}mW/mm2, which enables us to demonstrate tunnel-current-driven electron temperature reduction from 2.4 K to below 1.6 K (34% relative cooling) against the phonon bath. Our work shows that the key material of integrated superconducting circuits---niobium---enables powerful cryogenic refrigerator technology. This result is a prerequisite for practical cryogenic chip-scale refrigerators and, at the same time, it introduces a new electrothermal tool for quantum heat-transport experiments.
Advancements in cryo-enabled fields like space electronics and quantum information increasingly demand efficient cooling of chips down to deep cryogenic temperatures. In this work, we present an overview of recent progress in chip-scale cooling technologies for cryogenic microsystems. We, especially, discuss the underlying operational principles and technological innovations of tunnel junction coolers and adiabatic field refrigeration methods, emphasizing their significance for on-chip cooling and scalable general purpose cooling platforms.
A large-scale quantum computer is one of the main aims for researchers and industry in quantum technology at the moment. The interest in quantum computer development stems from the expectation that it could be used to solve problems that classical supercomputers are not able to. However, to build such useful quantum computers, a significant increase in the number of qubits is required compared to today’s systems. This scale-up requires development in many parts of the quantum computer, including the information transfer between room temperature control electronics and qubits in cryogenic temperature. Currently, information is transferred via metallic coaxial cables that inevitably also introduce a significant heat load to the cryostat. As the cooling power of cryostats is limited, alternatives need to be explored. In this thesis, we focus on optical control of superconducting quantum technology. The idea is to transfer information between room and cryogenic temperature in optical form, via optical fibers that have negligible heat load. Then, using an optical-to-electrical converter (OEC), the optical signal can be converted to electrical form and used to drive superconducting components. Similarly, the output signal can be transformed to optical form and transmitted back to room temperature optically. In this thesis, we study this topic by two distinct parts: disordered superconducting thin films and optical control of Josephson junction arrays. Disordered superconducting thin films are promising materials, e.g., for superconducting nanowire single-photon detectors (SNSPDs) which are one alternative of OECs. Therefore, in this thesis, we studied various disordered films. We explored the effects of ion irradiation on common superconducting materials (Al, Nb, NbN, TiN and MoSi) and demonstrated that ion irradiation increases disorder, i.e., increases normal-state sheet resistance. In addition, it can alter the critical temperature. Furthermore, for MoSi films we noticed that ion irradiation can help mix the materials. In addition, we studied atomic layer deposition (ALD) that is another fabrication method for disordered superconductors. We demonstrated superconductivity in MoC and NbCN films that were fabricated by novel thermal ALD processes. On the other hand, the motivation to study optical control of Josephson junction arrays is that when driven with arbitrary pulse patterns, they act as Josephson arbitrary waveform synthesizers (JAWS) that produce accurate, quantized voltage waveforms in the cryogenic temperature. In this thesis, we demonstrated driving of low critical current Josephson junction arrays with optical pulses that were converted to electrical form using commercial photodiodes. We developed a double-pulse method to study the dynamics of the system and compared the results to simulations. When we varied the time difference between pulses, the results followed expectations and simulations. We were able to drive the junction arrays to multiple Shapiro steps reliably. As a highlight, we demonstrated that the maximum drive frequency of our JAWS setup is significantly higher compared to typical methods that use electrical pulse pattern generators. Therefore, the work presented in this thesis can establish the groundwork for using optical pulses and fast Josephson junction arrays to enable energy-efficient and scalable method to drive superconducting components, such as qubits, that decreases the heat load and aids in the required scale-up for large-scale quantum computing.
The performance and coherence of superconducting quantum systems are fundamentally tied to the quality of the materials from which they are built. In superconducting transmon qubits, many loss mechanisms and sources of decoherence originate from material imperfections or unwanted oxide formation. Likewise, semiconductor–superconductor hybrid systems depend on high-quality interfaces to ensure strong coupling between electronic states in the two materials. In such hybrid devices, the accessible operating regime is often dictated by the intrinsic material properties of either the semiconductor or the superconductor. Advancing quantum device performance therefore requires exploring new material systems and optimizing their physical characteristics. In this thesis, we present the development of several superconducting material platforms for quantum technologies, including superconducting qubits, single-photon detectors, and semiconductor superconductor hybrid devices. We focus on the growth and characterization of superconducting films and heterostructures, and we establish clear connections between their material properties and the resulting device performance. First, we will present a novel semiconductor-superconductor hybrid material based on in-situ deposited epitaxial layers of Nb and Al on a shallow InAs quantum well. In this structure, the Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs two dimensional electron gas. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms. Then, we discuss a different approach in the next chapter where we develop a hybrid material based on a molecular beam epitaxy grown InAsSb surface quantum well with an in-situ deposited Nb layer directly on top of the quantum well. Relative to conventional Al-InAs based systems, the InAsSb surface quantum well offers a lower effective mass and stronger spin-orbit interaction, while the Nb layer has a higher critical temperature and a larger critical magnetic field. The in-situ deposition of the Nb layer directly on top of the quantum well results in a high-quality interface that enables strong coupling to the InAsSb quantum well. Transport measurements on Josephson junctions reveal an induced superconducting gap of 1.3 meV and a critical current density of 3.75 × 10³A/cm². Furthermore, a planar asymmetric SQUID is realized, exhibiting gate-tunable superimposed oscillations originating from both the individual Josephson junction and the full SQUID loop. The large induced superconducting gap combined with strong spin-orbit interaction position this material as an attractive platform for experiments exploring gate-tunable superconductivity and topological superconducting devices. In the next chapter, we will focus on establishing a link between Nb film crystal properties and their performance in superconducting circuits. In this study, we investigate the microwave properties of niobium resonators with different crystalline properties and related surface topographies. We analyze a series of magnetron sputtered films in which the Nb crystal orientation and surface topography are changed by varying the substrate temperatures between room temperature and 975 K. The lowest-loss resonators that we measure have quality factors of over 10⁶ at single-photon powers, among the best ever recorded using the Nb on sapphire platform. We observe the highest quality factors in films grown at an intermediate temperature regime of the growth series (550 K) where the films display both preferential ordering of the crystal domains and low surface roughness. Furthermore, we analyze the temperature-dependent behavior of our resonators to learn about how the quasi-particle density in the Nb film is affected by the niobium crystal structure and the presence of grain boundaries. Then, we explore yet a different material platform by attempting to realize onchip NbTiN single photon detectors on LiNbO₃, an emerging photonic platform with high potential for scalable quantum information processing. We use DC reactive magnetron sputtering to grow high-quality NbTiN thin films and investigate the impact of substrate temperature during NbTiN growth. We achieve four nm thick superconducting films with a critical temperature (𝑇𝑐) of 12.3 K grown at a substrate temperature of 825 K. We demonstrate that the increased substrate temperature reduces the oxygen concentration in our films and improves the overall stoichiometry. In addition, we integrate these films with the LiNbO3 platform and investigate the obtained interface quality. Finally, we fabricate superconducting nanowire single photon detectors from the NbTiN film on LiNbO₃ and characterize the detector performance. Lastly, we report a gate-tunable Josephson diode effect in hybrid nanowire junctions consisting of a spin-orbit-coupled semiconductor core coated with epitaxial ferromagnetic insulator and superconductor shells. The wires display a hysteretic superconducting window as a function of axial magnetic field. In the superconducting regime, the devices exhibit nonreciprocal current transport, with the diode efficiency showing a strong dependence on back-gate voltage. The effect persists in a remanent magnetization state following a controlled demagnetization procedure, establishing zero-field operation. The combination of results presented in this thesis stress the importance of a material-focused approach in advancing the performance of quantum hardware. The novel hybrid material platforms developed in this thesis expand the operating regime of devices, which could enable future experiments involving gate-tunable superconductivity or topological properties. Similarly, we demonstrate that optimizing superconductor crystal structure benefits quantum devices, such as single-photon detectors and superconducting resonators.