A general description of zero-temperature pure dephasing in optical multilevel systems is presented. We derive expressions for the dephasing time due to transition multipole interactions. Specific application of the theory to mixed crystal systems predicts the dependence of the dephasing times on the concentration of guest molecules and transition dipole moments which is observed experimentally. Numerical estimates of the zero-temperature dephasing rates are in good agreement with experiments when the dependence on exciting pulse flip angle is included. Finally, our results suggest new experiments which are briefly discussed.A general description of zero-temperature pure dephasing in optical multilevel systems is presented. We derive expressions for the dephasing time due to transition multipole interactions. Specific application of the theory to mixed crystal systems predicts the dependence of the dephasing times on the concentration of guest molecules and transition dipole moments which is observed experimentally. Numerical estimates of the zero-temperature dephasing rates are in good agreement with experiments when the dependence on exciting pulse flip angle is included. Finally, our results suggest new experiments which are briefly discussed.

The Journal of Physical ChemistryAug 1, 198119 citations

Electron Decoherence at Zero Temperature

Pritiraj Mohanty

Springer eBooksJan 1, 20011 citation

Single-electron coherence: Finite temperature versus pure dephasing

Michael V. Moskalets, Géraldine Haack

arXiv:1506.09028Physica E Low-dimensional Systems and NanostructuresSep 5, 201525 citations

Absence of electron dephasing at zero temperature

T. R. Kirkpatrick, D. Belitz

Dephasing of electrons due to the electron-electron interaction has recently been the subject of a controversial debate, with different calculations yielding mutually incompatible results. In this paper we prove, by means of Ward identities, that in a system with time reversal invariance, neither a Coulomb interaction nor a short-ranged model interaction can lead to phase breaking at zero temperature in spatial dimensions $d>2.$ Dephasing of electrons due to the electron-electron interaction has recently been the subject of a controversial debate, with different calculations yielding mutually incompatible results. In this paper we prove, by means of Ward identities, that in a system with time reversal invariance, neither a Coulomb interaction nor a short-ranged model interaction can lead to phase breaking at zero temperature in spatial dimensions $d>2.$

arXiv:cond-mat/0111398Physical review. B, Condensed matterMay 10, 20029 citations

Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dots

Paola Borri, W. Langbein, Stephan Schneider +4 more

We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.We present temperature-dependent measurements of the dephasing time in the ground-state transition of strongly-confined InGaAs quantum dots, using a highly sensitive four-wave mixing technique. At low temperature we measure a dephasing time of several hundred picoseconds. Between 7 and 100 K the polarization decay has two distinct components resulting in a non-Lorentzian lineshape with a sharp zero-phonon line and a broad band from elastic exciton-acoustic phonon interactions. We also explore the dephasing time beyond the one exciton occupation, by electrically injecting carriers. Electrical injection into the barrier region results in a dominantly pure dephasing of the excitonic ground-state transition. Once the injected carriers have filled the electronic ground state, additional filling of the excited states creates multiexcitons that show a fast dephasing due to population relaxation.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEJun 5, 20020 citations

Electron decoherence at low temperatures

Pritiraj Mohanty

APSMar 1, 20010 citations

d>2.