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Realization of superconducting quantum devices based on tunnel Josephson junctions by micro and nanofabrication techniques

Maria De Leo

Published Jan 1, 2013• 0 citations
Publisher

Abstract

This PhD Thesis is focused on the realization of superconducting quantum devices based on overdamped Nb/Al-AlOx/Nb SNIS (Superconductor - Normal metal - Insulator - Superconductor) tunneling Josephson junctions, interesting for several application fields (voltage metrology, digital electronics, radiation sensors, nanoSQUID, etc.). The challenges faced by quantum electronics and metrology are directing the new generations of devices towards smaller dimensions and higher levels of integration. Taking into account this requirement, the fabrication of SNIS-based devices has been addressed on downscaling the junction dimensions form the micro to the nanoscale. In particular, the effective area of junctions has been reduced exploiting three different lithographic techniques: the optical lithography to realize SNISs for a micrometer resolution, the Electron Beam Lithography (EBL) at the subµm and, finally, the Focused Ion Beam (FIB) sculpting method to achieve nanometer sizes. Specifically, prototypes have been realized exploiting the thin film technology, to guarantee a good control of electrical parameters of junctions, a higher reproducibility of their current-voltage I-V characteristics, and an accurate dimension control. Reliable and simpler fabrication processes have been implemented and validated, and the device downscaling was pursued without affecting the fundamental properties of SNIS junctions such as the non hysteretic I-V response and the skill on generating quantised voltage steps under radiofrequency irradiation. This work has thereby led to the definition and validation of a new generation of devices and processes down to the nanometer scale, and these approaches represent precious experiences of nanofabrication valuable for new research activities and projects

DOI
10.6092/polito/porto/2506305

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This PhD Thesis is focused on the realization of superconducting quantum devices based on overdamped Nb/Al-AlOx/Nb SNIS (Superconductor - Normal metal - Insulator - Superconductor) tunneling Josephson junctions, interesting for several application fields (voltage metrology, digital electronics, radiation sensors, nanoSQUID, etc.). The challenges faced by quantum electronics and metrology are directing the new generations of devices towards smaller dimensions and higher levels of integration. Taking into account this requirement, the fabrication of SNIS-based devices has been addressed on downscaling the junction dimensions form the micro to the nanoscale. In particular, the effective area of junctions has been reduced exploiting three different lithographic techniques: the optical lithography to realize SNISs for a micrometer resolution, the Electron Beam Lithography (EBL) at the subµm and, finally, the Focused Ion Beam (FIB) sculpting method to achieve nanometer sizes. Specifically, prototypes have been realized exploiting the thin film technology, to guarantee a good control of electrical parameters of junctions, a higher reproducibility of their current-voltage I-V characteristics, and an accurate dimension control. Reliable and simpler fabrication processes have been implemented and validated, and the device downscaling was pursued without affecting the fundamental properties of SNIS junctions such as the non hysteretic I-V response and the skill on generating quantised voltage steps under radiofrequency irradiation. This work has thereby led to the definition and validation of a new generation of devices and processes down to the nanometer scale, and these approaches represent precious experiences of nanofabrication valuable for new research activities and projects
The overdamped Nb/Al-AlOx/Nb superconductor-normal metal-insulator-superconductor SNIS Josephson junctions recently developed at INRIM exhibit high values of critical current density and characteristic voltage, making these devices appealing both for metrology and digital electronics. High current densities could allow reduction of junction size, increasing the integration level. In this work authors present first results concerning the realization of sub-μm SNIS including a nanolithographic technique (Electron Beam Lithography, EBL) into the conventional process, to reduce junction dimensions. Fabrication and electrical parameters have been evaluated considering the scaling of the areas of junctions, furthermore RF and temperature behaviour have been studied.
This thesis presents results focused on fabrication and electrical characterization of superconducting tunnel junctions and Josephson junctions, e.g. measuring the current–voltage response and 1/f noise from different samples at different temperatures. Junctions were fabricated inside a vacuum chamber where metal evaporation through a resist mask was used to create submicron-sized junctions. The tunneling barrier was common between all different samples, i.e. in-situ oxidized aluminium between the metal depositions. Different material combinations were used, e.g. Al–AlOₓ–Al, Al–AlOₓ–Al:Mn and Al–AlOₓ–Nb. The manganese doping in aluminium (Al:Mn) suppresses the superconductivity making the Al:Mn parts normal, while pure aluminium is superconducting, creating a normal metal–insulator–superconductor (NIS) device. The qualities of junctions were improved, if possible, by vacuum thermal annealing at 400 °C, which was found both to stabilize aluminium and aluminium–manganese based junctions and to reduce the characteristic 1/f noise in them. These results are desired, since for most applications it is important to have a junction with stable parameters over long time and 1/f noise is limiting the sensitivity of many devices. However, the procedure is not for granted, since most other NIS material combinations didn't survive the annealing treatment. We studied Al–AlOₓ–Nb junctions at cryogenic temperatures (≈ 100 mK) either as an SIS' device, or as an NIS device by suppressing the superconductivity of aluminium with magnetic field, and observed excess sub-gap current, which could not be explained by standard tunneling theory with the Dynes model.
Researches on the fabrication of ~ 0.1 × 0.1 μ m 2 superconductor–insulator–superconductor (SIS) Josephson junctions are reviewed. Today, a typical dimension is 1–10 μm for Josephson junctions in superconducting integrated circuits. These Josephson junctions are defined by well-established photolithographic technology with reactive ion etching (RIE), and for the superconductor, Nb is almost always used. The merits of Nb include the facts that the superconducting transition temperature Tc of Nb (9.2 K ) is higher than the boiling point of He (4.2 K ), and that Nb has excellent stability against thermal cycling between room temperature and liquid- He temperature. For the fabrication of ~ 0.1 × 0.1 μ m 2 junctions, on the other hand, there is a standard process with electron-beam lithography, shadow evaporation, and lift-off. This process works well for Al (Tc = 1.2 K ), however, it is not ideal for Nb . The scope of this brief review is the nanoscale junction with Nb electrodes. We will look at the efforts of optimizing the standard lift-off process for Nb , electron-beam-lithographic versions of the Nb Josephson-junction technology, focused-ion-beam (FIB) etching as a convenient alternative to electron-beam lithography and RIE, etc. In order to characterize nanoscale tunnel junctions, the single-charge transistor has been often fabricated. Therefore, a summary of its theoretical transport properties is also included.
Abstract In this paper a nanofabrication process, based on a focused ion beam (FIB) nanosculpting technique, for high sensitivity three-dimensional nanoscale superconducting quantum interference devices (nanoSQUIDs) is reported. The crucial steps of the fabrication process are described, as are some peculiar features of the superconductor–normal metal–insulator–superconductor (SNIS) Josephson junctions, which may useful for applications in cryocooler systems. This fabrication procedure is employed to fabricate sandwich nanojunctions and high sensitivity nanoSQUIDs. Specifically, the superconductive nanosensors have a rectangular loop of 1 × 0.2–0.4 μ m 2 interrupted by two square Nb/Al–AlO x /Nb SNIS Josephson junctions with side lengths of 0.3 μ m. The characterization of a typical nanoSQUID has been carried out and a spectral density of magnetic flux noise as low as 0.8 μ Φ 0 Hz –1/2 has been measured.
An interesting feature of Superconductor Normal metal Superconductor - Josephson junctions for digital applications is due to their non-hysteretic current-voltage characteristics in a broad temperature range below Tc. This allows to design Single-Flux-Quantum (SFQ) cells without the need of external shunts. Two advantages can be drawn from this property: first the SFQ cells can be more compact which leads to a more integrated solution towards nano-devices and more complex circuits; second the absence of electrical parasitic elements associated with the wiring of resistors external to the Josephson junctions increases the performance of SFQ circuits, in particular regarding the ultimate speed of operation. For this purpose Superconductor Normal metal Insulator-Superconductor Nb/Al-AlOx/Nb Josephson junctions have been recently developed at INRiM with aluminum layer thicknesses between 30 and 100 nm. They exhibit non-hysteretic current-voltage characteristics with RnIc values higher than 0.5 mV in a broad temperature range and optimal Stewart McCumber parameters at 4.2 K for RSFQ applications. The main features of obtained SNIS junctions regarding digital applications are presented.
The requirements of quantum metrology and nanoscience are driving the need for single-particle detection capability across a wide variety of physics areas, including quantum information processing, single-photon detection, nanoelectromechanical systems, nanomagnetism and spintronics. The single particles to be detected include atoms, molecules, photons, spins and even phonons, in the future. Nanoscale superconducting quantum interference devices (nanoSQUIDs) represent a new manifestation of an old but exciting superconducting technology which addresses some of these requirements. In this paper we describe a straightforward approach to fabricating Nb microbridge weak links using combined optical lithography and focused ion beams which may be used to fabricate nanoSQUIDs. The devices show non-hysteretic current?voltage characteristics and demonstrate very low noise, even at operating temperatures above 4.2?K. To improve our understanding of the superconducting properties of the Josephson microbridge/nanobridge junctions which have proved very successful in realizing low noise nanoSQUIDs we have carried out a combination of investigations. These include cryogenic resistance versus temperature (R(T)) and current?voltage characteristic measurements, atomic force microscope scans, controlled gallium (Ga) ion milling and implantation, and ion beam track modelling of these Josephson devices and Nb thin films.