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Fabrication, electrical characterization and 1/f noise study of submicron-sized superconducting tunnel junctions

J. K. Julin

Published Jan 1, 2016• 0 citations
OpenAlex

Abstract

This thesis presents results focused on fabrication and electrical characterization of superconducting tunnel junctions and Josephson junctions, e.g. measuring the current–voltage response and 1/f noise from different samples at different temperatures. Junctions were fabricated inside a vacuum chamber where metal evaporation through a resist mask was used to create submicron-sized junctions. The tunneling barrier was common between all different samples, i.e. in-situ oxidized aluminium between the metal depositions. Different material combinations were used, e.g. Al–AlOₓ–Al, Al–AlOₓ–Al:Mn and Al–AlOₓ–Nb. The manganese doping in aluminium (Al:Mn) suppresses the superconductivity making the Al:Mn parts normal, while pure aluminium is superconducting, creating a normal metal–insulator–superconductor (NIS) device. The qualities of junctions were improved, if possible, by vacuum thermal annealing at 400 °C, which was found both to stabilize aluminium and aluminium–manganese based junctions and to reduce the characteristic 1/f noise in them. These results are desired, since for most applications it is important to have a junction with stable parameters over long time and 1/f noise is limiting the sensitivity of many devices. However, the procedure is not for granted, since most other NIS material combinations didn't survive the annealing treatment. We studied Al–AlOₓ–Nb junctions at cryogenic temperatures (≈ 100 mK) either as an SIS' device, or as an NIS device by suppressing the superconductivity of aluminium with magnetic field, and observed excess sub-gap current, which could not be explained by standard tunneling theory with the Dynes model.

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Nb/Al–AlO x /Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al–AlO x /Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with V m = 100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm 2 , which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.

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This thesis presents results focused on fabrication and electrical characterization of superconducting tunnel junctions and Josephson junctions, e.g. measuring the current–voltage response and 1/f noise from different samples at different temperatures. Junctions were fabricated inside a vacuum chamber where metal evaporation through a resist mask was used to create submicron-sized junctions. The tunneling barrier was common between all different samples, i.e. in-situ oxidized aluminium between the metal depositions. Different material combinations were used, e.g. Al–AlOₓ–Al, Al–AlOₓ–Al:Mn and Al–AlOₓ–Nb. The manganese doping in aluminium (Al:Mn) suppresses the superconductivity making the Al:Mn parts normal, while pure aluminium is superconducting, creating a normal metal–insulator–superconductor (NIS) device. The qualities of junctions were improved, if possible, by vacuum thermal annealing at 400 °C, which was found both to stabilize aluminium and aluminium–manganese based junctions and to reduce the characteristic 1/f noise in them. These results are desired, since for most applications it is important to have a junction with stable parameters over long time and 1/f noise is limiting the sensitivity of many devices. However, the procedure is not for granted, since most other NIS material combinations didn't survive the annealing treatment. We studied Al–AlOₓ–Nb junctions at cryogenic temperatures (≈ 100 mK) either as an SIS' device, or as an NIS device by suppressing the superconductivity of aluminium with magnetic field, and observed excess sub-gap current, which could not be explained by standard tunneling theory with the Dynes model.
This PhD Thesis is focused on the realization of superconducting quantum devices based on overdamped Nb/Al-AlOx/Nb SNIS (Superconductor - Normal metal - Insulator - Superconductor) tunneling Josephson junctions, interesting for several application fields (voltage metrology, digital electronics, radiation sensors, nanoSQUID, etc.). The challenges faced by quantum electronics and metrology are directing the new generations of devices towards smaller dimensions and higher levels of integration. Taking into account this requirement, the fabrication of SNIS-based devices has been addressed on downscaling the junction dimensions form the micro to the nanoscale. In particular, the effective area of junctions has been reduced exploiting three different lithographic techniques: the optical lithography to realize SNISs for a micrometer resolution, the Electron Beam Lithography (EBL) at the subµm and, finally, the Focused Ion Beam (FIB) sculpting method to achieve nanometer sizes. Specifically, prototypes have been realized exploiting the thin film technology, to guarantee a good control of electrical parameters of junctions, a higher reproducibility of their current-voltage I-V characteristics, and an accurate dimension control. Reliable and simpler fabrication processes have been implemented and validated, and the device downscaling was pursued without affecting the fundamental properties of SNIS junctions such as the non hysteretic I-V response and the skill on generating quantised voltage steps under radiofrequency irradiation. This work has thereby led to the definition and validation of a new generation of devices and processes down to the nanometer scale, and these approaches represent precious experiences of nanofabrication valuable for new research activities and projects
Nb/Al–AlO x /Nb tunnel junctions are often used in the studies of macroscopic quantum phenomena and superconducting qubit applications of the Josephson devices. In this work, we describe a convenient and reliable process using electron beam lithography for the fabrication of high-quality, submicron-sized Nb/Al–AlO x /Nb Josephson junctions. The technique follows the well-known selective Nb etching process and produces high-quality junctions with V m = 100 mV at 2.3 K for the typical critical current density of 2.2 kA/cm 2 , which can be adjusted by controlling the oxygen pressure and oxidation time during the formation of the tunnelling barrier. We present the results of the temperature dependence of the sub-gap current and in-plane magnetic-field dependence of the critical current, and compare them with the theoretical predictions.
The overdamped Nb/Al-AlOx/Nb superconductor-normal metal-insulator-superconductor SNIS Josephson junctions recently developed at INRIM exhibit high values of critical current density and characteristic voltage, making these devices appealing both for metrology and digital electronics. High current densities could allow reduction of junction size, increasing the integration level. In this work authors present first results concerning the realization of sub-μm SNIS including a nanolithographic technique (Electron Beam Lithography, EBL) into the conventional process, to reduce junction dimensions. Fabrication and electrical parameters have been evaluated considering the scaling of the areas of junctions, furthermore RF and temperature behaviour have been studied.
In this work four different mesoscopic superconducting devices have been experimentally studied: an ammeter based on a hysteretic Josephson junction switching from the superconducting state to the normal state, a conventional Cooper pair pump (CPP) based on two superconducting islands separated by tunnel junctions, a novel flux assisted Cooper pair pump and a thermometer based on a tunnel junction between a superconductor and a normal metal. These devices make use of phenomena related to superconductivity and are also benefiting from some properties of small structures, e.g., of quantum mechanical tunneling and of transport of single electrons. The present research focused on investigating performance limitations of these devices and the aim was to improve their performance. A hysteretic Josephson junction switching can be used as a sensitive current threshold detector. For many purposes, a smaller critical current Ic of the detecting junction would yield a higher current sensitivity. It was found in this Thesis that the main limitation of the ammeter is that with increasing sensitivity the negative effects due to dissipation start to dominate. In this Thesis the Josephson junction was also demonstrated as a shot-noise detector, and it was concluded that this kind of a device could probably be made into an absolute on-chip detector of Fano-factors and noise in general. A charge pump is a device which can periodically transfer a discrete amount of charge Q through an electrical circuit. The measured double island CPP introduced a frequency dependent current with a value close to the expected one at low pumping frequencies. The drawback in the measurements was that the direction of the pumped current was set by the bias voltage. The results of the measurement on flux assisted pumping were indeed very promising and the studied device was able to produce sufficiently high pumped currents of around 0.1 nA with reasonable accuracy. Thermometer based on NIS (Normal metal - Insulator - Superconductor) tunnel junctions is a very promising temperature sensor for bolometric radiation sensor applications. This work showed that it can be used as a sensitive thermometer up to MHz frequencies range and that its response time is limited by the electron-phonon scattering rate.
This thesis describes the development and testing of NbN/MgO/NbN tunnel junctions for use as superconductor-insulator-superconductor (SIS) mixers. SIS mixers are the most sensitive heterodyne detectors in the millimeter wavelength region. Most SIS mixers use Pb alloy tunnel junction. These tunnel junctions have several problems associated with the soft nature of Pb and its low superconducting transition temperature. NbN-based tunnel junctions are being developed to overcome these difficulties. These devices are intended to be used as mixers at millimeter and submillimeter wavelengths. This thesis describes the fabrication process involved in making NbN junctions, and the results of measurements on these devices. The purpose of these measurements is to determine the future possibilities of NbN tunnel junctions as high-frequency mixers. The first chapter is an introduction to SIS mixers and explains how tunnel junction properties affect mixer performance. The basic theory of tunneling and mixing in SIS mixers is first presented. A description of quantum mixer theory is included in this presentation. This theory makes several interesting predictions that cannot be explained using classical theories. This is followed by a description of how real SIS tunnel junctions differ from ideal junctions. The physical origin of these differences is discussed, along with how they affect SIS mixer performance. Finally, the advantages and disadvantages of the various superconducting materials available are discussed. The decision to develop NbN devices is based on these material properties. The second chapter describes the methods used to fabricate small-area NbN/MgO/NbN tunnel junctions. The chapter begins with a description of the various methods that have been used to deposit NbN films. Reactive magnetron sputtering is chosen as the best method for tunnel junction fabrication. Details on the vacuum systems and the methods used for depositing superconducting NbN are discussed. Next, the process used for depositing junction trilayers (NbN/MgO/NbN) is described. The probable growth mode of MgO on NbN is presented. The importance of this growth mode to the junction quality is explained in some detail. Next, standard junction processing steps are reported. The details and limitations of each step are put forth. The standard process allows for the fabrication of 1 [square micron] tunnel junctions. Finally, this chapter discusses several methods of fabaricating submicron junctions that are being pursued. The status of this work is given. The third chapter describes the characterization of NbN films and NbN/Mg0/NbN tunnel junctions. Film properties are described first. The correlation of these properties to deposition conditions is discussed in some detail. Next, values for the various features of the I-V characteristic are given; typical and exceptional values are noted. How these features limit mixer results is described in detail. Several important device attributes were measured using superconducting-quantum-interference-devices (SQUIDs). These attributes are the junction's specific capacitance and the film's magnetic penetration depth. The theory and results of measuring specific capacitance and penetration depth are presented. Following the SQUID results is a large section on RP testing. Mixer tests were made at 205 GHz. The receiver design used, integral inductive tuning circuit used and results are discussed. These results are well understood, with the exception of the temperature dependence of the mixer performance. Finally, measurements of the uniformity of many junctions on a single wafer are presented. The importance of junction uniformity is also described. The final chapter discusses the ultimate limits on NbN mixers, and tells what future work must be done to achieve these limits. The primary high-frequency limit on NbN junctions is the capacitance of NbN/MgO/NbN junctions. The limit imposed by the junction capacitance and circuits used to tune out this capacitance are discussed. Also, the low-frequency limits on NbN junctions are discussed. The status of submicron devices is presented. Junction area is the most immediate limitation on NbN mixer results. The possibility of using other barrier materials to increase the RC speed of NbN junctions is presented. Finally, the possibility of operating NbN junctions at temperatures above 4.2 K is discussed.
We report on the fabrication and millikelvin char acterization of Nb/Al–AlOx/Nb Josephson junctions directly de posited on X-cut LiNbO3 substrates. Motivated by the strong electro-optic and piezoelectric properties of LiNbO3, such devices are of interest for future hybrid superconducting–electro-optic architectures. The junctions were fabricated using standard processes involving DC magnetron sputtering followed by controlled thermal oxidation of the aluminum layer to form an AlOx tunnel barrier with reproducible junction areas. Insulation of the junctions was achieved by anodization and SiOx deposition. Electrical measurements performed at 30 mK reveal high-quality Josephson tunnel junction behavior with a critical current density ofJc= 70 A/cm2and a characteristic voltage reaching values up toVm= 286 mV. Differential conductance measurements exhibit pronounced quasiparticle peaks corresponding to a sum gap energy of 2Δ = (2.73 ± 0.05) meV, confirming the good quality of the Nb electrodes. Magnetic-field-dependent measure ments yield a Josephson penetration depth of λJ= 45 μm, confirming operation in the small-junction regime, with deviations from the ideal Josephson interference pattern attributed to non-uniform current distribution across the junction area. Compared to our previous characterization at 4.2 K, this work demonstrates reliable Josephson junction operation on LiNbO3 at dilution-refrigerator temperatures relevant for quantum circuits, supporting the suitability of lithium niobate as a promising substrate for future hybrid superconducting–electro-optic device implementations.