Coherent spin-photon coupling is believed to play a significant role in silicon-based quantum computation. The resonant exchange (RX) qubit, formed in a triple quantum dot, is a promising platform for spin-photon coupling and qubit scaling due to the large electric dipole moment and full electrical control without auxiliary micromagnets. However, there has been no experimental demonstration of silicon RX qubits and their strong coupling to microwave photons to date. In this work, we report the strong coupling between an RX qubit and a high-impedance resonator on a Si/SiGe heterostructure with coupling strength g_{s}/(2π)=65.8 MHz and decoherence rate γ_{s}/(2π)=21.4 MHz. Furthermore, the dependence of decoherence rate on detuning is measured and analyzed using a phenomenological model, indicating that the charge noise is the main source of decoherence. Our results demonstrate the viability of RX qubits in silicon, highlighting their crucial role of large-scale qubit integration for silicon quantum computation and opening new possibilities for quantum network.
Coherent spin-photon coupling is believed to play a significant role in silicon-based quantum computation. The resonant exchange (RX) qubit, formed in a triple quantum dot, is a promising platform for spin-photon coupling and qubit scaling due to the large electric dipole moment and full electrical control without auxiliary micromagnets. However, there has been no experimental demonstration of silicon RX qubits and their strong coupling to microwave photons to date. In this work, we report the strong coupling between an RX qubit and a high-impedance resonator on a Si/SiGe heterostructure with coupling strength g_{s}/(2π)=65.8 MHz and decoherence rate γ_{s}/(2π)=21.4 MHz. Furthermore, the dependence of decoherence rate on detuning is measured and analyzed using a phenomenological model, indicating that the charge noise is the main source of decoherence. Our results demonstrate the viability of RX qubits in silicon, highlighting their crucial role of large-scale qubit integration for silicon quantum computation and opening new possibilities for quantum network.
Abstract Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of g 0/(2π) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.
Abstract Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction with photons in the resonant exchange (RX) regime, when exchange is simultaneously active on both qubit axes. However, most theoretical work has been based on phenomenological Fermi–Hubbard models, which may not fully capture the complexity of the qubit spin-charge states in this regime. Here we investigate exchange in Si/SiGe and GaAs TQDs using full configuration interaction (FCI) calculations which better describe practical device operation. We show that high exchange operation in general, and the RX regime in particular, can differ significantly from simple models, presenting new challenges and opportunities for spin–photon coupling. We highlight the impact of device electrostatics and effective mass on exchange and identify a new operating point (XRX) where strong spin–photon coupling is most likely to occur in Si/SiGe TQDs. Based on our numerical results, we analyze the feasibility of a remote entanglement cavity iSWAP protocol and discuss design pathways for improving fidelity. Our analysis provides insight into the requirements for TQD spin–photon transduction and demonstrates more generally the necessity of accurate modeling of exchange in spin qubits.
A controllable and coherent light-matter interface is an essential element for a scalable quantum information processor. Strong coupling to an on-chip cavity has been accomplished in various electron quantum dot systems, but rarely explored in the hole systems. Here we demonstrate a hybrid architecture comprising a microwave transmission line resonator controllably coupled to a hole charge qubit formed in a Ge/Si core/shell nanowire (NW), which is a natural one-dimensional hole gas with a strong spin–orbit interaction (SOI) and lack of nuclear spin scattering, potentially enabling fast spin manipulation by electric manners and long coherence times. The charge qubit is established in a double quantum dot defined by local electrical gates. Qubit transition energy can be independently tuned by the electrochemical potential difference and the tunnel coupling between the adjacent dots, opening transverse (σ x ) and longitudinal (σ z ) degrees of freedom for qubit operation and interaction. As the qubit energy is swept across the photon level, the coupling with resonator is thus switched on and off, as detected by resonator transmission spectroscopy. The observed resonance dynamics is replicated by a complete quantum numerical simulation considering an efficient charge dipole-photon coupling with a strength up to 2π × 55 MHz, yielding an estimation of the spin-resonator coupling rate through SOI to be about 10 MHz. The results inspire the future researches on the coherent hole-photon interaction in Ge/Si nanowires.
Combining superconducting resonators and quantum dots has triggered tremendous progress in quantum information, however, attempts at coupling a resonator to even charge parity spin qubits have resulted only in weak spin-photon coupling. Here, we integrate a zincblende InAs nanowire double quantum dot with strong spin-orbit interaction in a magnetic-field resilient, high-quality resonator. The quantum confinement in the nanowire is achieved using deterministically grown wurtzite tunnel barriers. Our experiments on even charge parity states and at large magnetic fields, allow us to identify the relevant spin states and to measure the spin decoherence rates and spin-photon coupling strengths. We find an anti-crossing between the resonator mode in the single photon limit and a singlet-triplet qubit with a spin-photon coupling strength of g/2π = 139 ± 4 MHz. This coherent coupling exceeds the resonator decay rate κ/2π = 19.8 ± 0.2 MHz and the qubit dephasing rate γ/2π = 116 ± 7 MHz, putting our system in the strong coupling regime.
Quantum computing is a powerful way of improving computing efficiency. For some specific problems, quantum processor can exponentially reduce computation time compared to the classical computer. Cavity quantum electrodynamics, which studies the coherent interaction between photons in an optical cavity and atoms or other two-level systems, is of enormous significance to quantum computing and quantum information processing. The strong coupling regime where a cavity photon mode and an atom exchange a single quantum energy coherently has attracted extensive interest in varied experimental platforms and systems such as alkali atoms, Rydberg atoms, large spin ensembles, magnons, etc. The semiconductor gate-defined double quantum dot (DQD) system is one of the most promising platforms that possesses advantages of advanced micro-nano processing technology and outstanding scalability. Introducing the concept of cavity QED into superconducting circuits (circuit QED, cQED), provides an opportunity to study interaction between electrons confined in semiconductor DQD and photons trapped in a superconducting resonator. Reaching strong coupling regime in this hybrid system paves the way to large-scale network of quantum computing. Electrons confined in DQD have large electrical dipoles, thus are able to couple to photons with relatively large coupling rate. Whereas, due to the charge noise and other dissipation channels in the hybrid system, the decoherence rate of the system is larger than the coupling rate, leaving the strong coupling a great challenge. In recent years, different methods have been proposed to access the strong coupling regime. Taking advantage of a high-quality heterojunction structure, an overlapping gate architecture and a low-pass LC filter on the DC bias line, the decoherence of the charge qubit and microwave leakage of the resonator can be effectively suppressed. The coupling strength of the hybrid system can be improved utilizing a high impedance resonator which is comprised of high kinetic inductance materials. Spin, which does not interact directly with the electric field, is insensitive to charge noise and has much longer decoherence time than charge qubit. However, the weak interaction results in a small coupling rate between the spin and the photon. To solve this problem, the method of coherent hybridization between the spin and the charge state is proposed to improve the coupling strength. This hybridization can be achieved by applying a non-uniform magnetic field, utilizing spin-orbit interaction or spin exchange interaction. At present, both charge qubits and spin qubits have achieved strong coupling with the cavity and the coupling distance between long-range qubits is greatly expanded as long as millimeters. This review introduces basic ideas about cQED and fundamental elements in semiconductor cQED systems. Recent progress in strong coupling hybrid system and methods for improving coupling structures are discussed. In future research, more efforts will be devoted into long-range transfer of qubit states and photon-mediated two or multi-qubit gates.
Coherent and strong coupling between photons and solid-state qubits, in the form of circuit quantum electrodynamics (QED), has been harnessed for two-qubit gates mediated by photons and high-fidelity quantum non-demolition readout, which are the building blocks of large-scale quantum computation. Recently, circuit QED has been extended to gate-defined semiconductor quantum dots. In this thesis, we develop a novel hybrid circuit QED architecture composed of a high-impedance superconducting microwave resonator and spins localized in silicon-MOS quantum dots. To control and measure the spin degrees of freedom, this hybrid system needs to operate at finite magnetic field. Consequently, we develop and characterize microwave resonators based on thin niobium nitride (NbN) films featuring a high kinetic inductance. We demonstrate high-impedance resonators with magnetic field resilience and low photon loss rates. We then co-integrate the NbN resonators on silicon spin qubit chips. With a hole confined in a double quantum dot (DQD), we report the first realization of a strong hole charge-photon interaction bordering the ultra-strong coupling regime. At finite magnetic field, putting the spin transition energy in resonance with the microwave cavity, we observe large vacuum Rabi mode splittings, signature of a strong spin-photon coupling. Our findings are well captured by the modelling of a hole DQD with different anisotropic Zeeman response in each dot and spin-orbit coupling dependent tunnel rates. We also find a sizeable spin-photon coupling when the hole is localized in the single quantum dot, in line with recent theoretical predictions. The different works presented in this manuscript pave the way for circuit QED with hole spins in gate-defined semiconductor quantum dots.