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arXiv:2001.09240 · Quantum Science and Technology

Resonant exchange operation in triple-quantum-dot qubits for spin–photon transduction

Andrew Pan, Tyler Keating, Mark F. Gyure, Emily Pritchett, Samuel Quinn, Richard S. Ross, Thaddeus D. Ladd, Joseph Kerckhoff

Published Apr 6, 2020• 22 citations
arXivHTMLPDF

Abstract

Abstract Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction with photons in the resonant exchange (RX) regime, when exchange is simultaneously active on both qubit axes. However, most theoretical work has been based on phenomenological Fermi–Hubbard models, which may not fully capture the complexity of the qubit spin-charge states in this regime. Here we investigate exchange in Si/SiGe and GaAs TQDs using full configuration interaction (FCI) calculations which better describe practical device operation. We show that high exchange operation in general, and the RX regime in particular, can differ significantly from simple models, presenting new challenges and opportunities for spin–photon coupling. We highlight the impact of device electrostatics and effective mass on exchange and identify a new operating point (XRX) where strong spin–photon coupling is most likely to occur in Si/SiGe TQDs. Based on our numerical results, we analyze the feasibility of a remote entanglement cavity iSWAP protocol and discuss design pathways for improving fidelity. Our analysis provides insight into the requirements for TQD spin–photon transduction and demonstrates more generally the necessity of accurate modeling of exchange in spin qubits.

DOI
10.1088/2058-9565/ab86c9

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The resonant exchange (RX) qubit is a promising variant of the exchange-only spin qubit in a triple quantum dot which responds to a narrow-band resonant frequency. But the advantage of a permanently applied exchange splitting for spin control generally entails an increased susceptibility to charge noise. We have investigated the influence of electrical charge noise on a resonant exchange (RX) qubit by taking into account uncorrelated noise in each quantum dot, giving rise to two independent noisy bias parameters e and ∆ [1]. Calculating the energy splitting of the two qubit states as a function of these two bias detuning parameters, we have identified sweet spots, where the qubit is least susceptible to noise. Our investigation shows that the sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters between the dots. By calculating and comparing the charge dephasing rates at the various operating points of the RX qubit, we identify a new favorable operating regime for the RX qubit in the case of weak noise, based on these double sweet spots. In contrast, spin noise can be mitigated using exchange-based dynamical decoupling sequences that have been optimized using two different strategies, Uhrig dynamical decoupling (UDD) and optimized filter function dynamical decoupling (OFDD) [2]. Finally, we give a brief outlook towards the possibility of long-distance coupling between resonant exchange qubits mediated by a microwave cavity [3]. [1] M. Russ and G. Burkard, Phys. Rev. B 91, 235411 (2015). [2] N. Rohling and G. Burkard, arXiv:1510.04098. [3] M. Russ and G. Burkard, Phys. Rev. B (accepted) [arXiv:1508.07122].

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Maximilian Rimbach-Russ, Guido Burkard

We investigate the influence of electrical charge noise on a resonant exchange (RX) qubit in a triple quantum dot. This RX qubit is a variation of the exchange-only spin qubit which responds to a narrow-band resonant frequency. Our noise model includes uncorrelated charge noise in each quantum dot giving rise to two independent (noisy) bias parameters $\ensuremath{\varepsilon}$ and $\mathrm{\ensuremath{\Delta}}$. We calculate the energy splitting of the two qubit states as a function of these two bias detuning parameters to find ``sweet spots,'' where the qubit is least susceptible to noise. Our investigation shows that such sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters. The location of the sweet spots in the $(\ensuremath{\varepsilon},\mathrm{\ensuremath{\Delta}})$ plane depends on the hopping strength and asymmetry between the quantum dots. In the regime of weak charge noise, we identify a new favorable operating regime for the RX qubit based on these sweet spots.

arXiv:1502.06109•Physical Review B•Jun 9, 2015•40 citations
Abstract Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction with photons in the resonant exchange (RX) regime, when exchange is simultaneously active on both qubit axes. However, most theoretical work has been based on phenomenological Fermi–Hubbard models, which may not fully capture the complexity of the qubit spin-charge states in this regime. Here we investigate exchange in Si/SiGe and GaAs TQDs using full configuration interaction (FCI) calculations which better describe practical device operation. We show that high exchange operation in general, and the RX regime in particular, can differ significantly from simple models, presenting new challenges and opportunities for spin–photon coupling. We highlight the impact of device electrostatics and effective mass on exchange and identify a new operating point (XRX) where strong spin–photon coupling is most likely to occur in Si/SiGe TQDs. Based on our numerical results, we analyze the feasibility of a remote entanglement cavity iSWAP protocol and discuss design pathways for improving fidelity. Our analysis provides insight into the requirements for TQD spin–photon transduction and demonstrates more generally the necessity of accurate modeling of exchange in spin qubits.
Coherent spin-photon coupling is believed to play a significant role in silicon-based quantum computation. The resonant exchange (RX) qubit, formed in a triple quantum dot, is a promising platform for spin-photon coupling and qubit scaling due to the large electric dipole moment and full electrical control without auxiliary micromagnets. However, there has been no experimental demonstration of silicon RX qubits and their strong coupling to microwave photons to date. In this work, we report the strong coupling between an RX qubit and a high-impedance resonator on a Si/SiGe heterostructure with coupling strength g_{s}/(2π)=65.8 MHz and decoherence rate γ_{s}/(2π)=21.4 MHz. Furthermore, the dependence of decoherence rate on detuning is measured and analyzed using a phenomenological model, indicating that the charge noise is the main source of decoherence. Our results demonstrate the viability of RX qubits in silicon, highlighting their crucial role of large-scale qubit integration for silicon quantum computation and opening new possibilities for quantum network.
Abstract Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of g 0/(2π) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.
The resonant exchange (RX) qubit is a promising variant of the exchange-only spin qubit in a triple quantum dot which responds to a narrow-band resonant frequency. But the advantage of a permanently applied exchange splitting for spin control generally entails an increased susceptibility to charge noise. We have investigated the influence of electrical charge noise on a resonant exchange (RX) qubit by taking into account uncorrelated noise in each quantum dot, giving rise to two independent noisy bias parameters e and ∆ [1]. Calculating the energy splitting of the two qubit states as a function of these two bias detuning parameters, we have identified sweet spots, where the qubit is least susceptible to noise. Our investigation shows that the sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters between the dots. By calculating and comparing the charge dephasing rates at the various operating points of the RX qubit, we identify a new favorable operating regime for the RX qubit in the case of weak noise, based on these double sweet spots. In contrast, spin noise can be mitigated using exchange-based dynamical decoupling sequences that have been optimized using two different strategies, Uhrig dynamical decoupling (UDD) and optimized filter function dynamical decoupling (OFDD) [2]. Finally, we give a brief outlook towards the possibility of long-distance coupling between resonant exchange qubits mediated by a microwave cavity [3]. [1] M. Russ and G. Burkard, Phys. Rev. B 91, 235411 (2015). [2] N. Rohling and G. Burkard, arXiv:1510.04098. [3] M. Russ and G. Burkard, Phys. Rev. B (accepted) [arXiv:1508.07122].
We use Si/SiGe triple quantum dots to operate two and three spin qubits with high fidelities. For the two qubit we speed up the single qubit and exchange control to achieve the fault tolerance threshold fidelity of>99> 99>99%. For the three qubits we control two exchange couplings to generate a three-spin entangled state.
Semiconductor quantum dot systems offer a promising platform for quantum computation. And these quantum computation candidates are normally based on spin or charge properties of electrons. In these systems, we focus on quantum computation based on electron spins since these systems has good scalability, long coherence times, and rapid gate operations. And this thesis focuses on building a theoretical description of quantum dot systems and the link between theory and experiments. In many quantum dot systems, exchange interactions are the primary mechanism used to control spins and generate entanglement. And exchange energies are normally positive, which limits control flexibility. However, recent experiments show that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin triplet-like rather than singlet-like ground state. Here we show using a microscopic model based on the configuration interaction (CI) method that both triplet-like and singlet-like ground states are realized depending on the number of electrons. In the case of only four electrons, a full CI calculation reveals that triplet-like ground states occur for sufficiently large dots. These results hold for symmetric and asymmetric quantum dots in both Si and GaAs, showing that negative exchange interactions are robust in few-electron double quantum dots and do not require large numbers of electrons. Recent experiments also show the potential to utilize large quantum dots to mediate superexchange interaction and generate entanglement between distant spins. This opens up a possible mechanism for selectively coupling pairs of remote spins in a larger network of quantum dots. Taking advantage of this opportunity requires a deeper understanding of how to control superexchange interactions in these systems. Here, we consider a triple-dot system arranged in linear and triangular geometries. We use CI calculations to investigate the interplay of superexchange and nearest-neighbor exchange interactions as the location, detuning, and electron number of the mediating dot are varied. We show that superexchange processes strongly enhance and increase the range of the net spin-spin exchange as the dots approach a linear configuration. Furthermore, we show that the strength of the exchange interaction depends sensitively on the number of electrons in the mediator. Our results can be used as a guide to assist further experimental efforts towards scaling up to larger, two-dimensional quantum dot arrays.
We investigate the influence of electrical charge noise on a resonant exchange (RX) qubit in a triple quantum dot. This RX qubit is a variation of the exchange-only spin qubit which responds to a narrow-band resonant frequency. Our noise model includes uncorrelated charge noise in each quantum dot giving rise to two independent (noisy) bias parameters $\ensuremath{\varepsilon}$ and $\mathrm{\ensuremath{\Delta}}$. We calculate the energy splitting of the two qubit states as a function of these two bias detuning parameters to find ``sweet spots,'' where the qubit is least susceptible to noise. Our investigation shows that such sweet spots exist within the low-bias regime, in which the bias detuning parameters have the same magnitude as the hopping parameters. The location of the sweet spots in the $(\ensuremath{\varepsilon},\mathrm{\ensuremath{\Delta}})$ plane depends on the hopping strength and asymmetry between the quantum dots. In the regime of weak charge noise, we identify a new favorable operating regime for the RX qubit based on these sweet spots.