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Applied Physics Letters

Strong coupling between cavity and flopping-mode qubit beyond direct gate connection in a Si/SiGe triple quantum dot

Shun-Li Jiang, Tian-Yi Jiang, Tian-Yue Hao, Yong-Qiang Xu, Rui Wu, Bao‐Chuan Wang, Hai-Ou Li, Gang Cao, Guo‐Ping Guo

Published Mar 1, 2025• 1 citation
Publisher

Abstract

Cavity coupled flopping-mode spin qubit is considered as a promising scheme for enabling long-range qubit interactions in large-scale semiconductor quantum computation. In this work, we fabricate a linear Si/SiGe triple quantum dot (TQD) array coupled with a high-impedance TiN coplanar waveguide cavity via the gate of outer quantum dot. By utilizing two adjacent dots within the TQD, we sequentially encode two flopping-mode qubits at different positions, whether with or without gate connection, which exhibit strong coupling to the cavity. Furthermore, we demonstrate the qubit manipulation with the help of dispersive readout, achieving Rabi oscillation frequencies of 16.9 and 13.7 MHz at zero detuning. These results expand the spatial range of qubit coupling and readout via the cavity, enhancing the operational efficiency of cavity-quantum dot array coupled system.

DOI
10.1063/5.0248678

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Cavity coupled flopping-mode spin qubit is considered as a promising scheme for enabling long-range qubit interactions in large-scale semiconductor quantum computation. In this work, we fabricate a linear Si/SiGe triple quantum dot (TQD) array coupled with a high-impedance TiN coplanar waveguide cavity via the gate of outer quantum dot. By utilizing two adjacent dots within the TQD, we sequentially encode two flopping-mode qubits at different positions, whether with or without gate connection, which exhibit strong coupling to the cavity. Furthermore, we demonstrate the qubit manipulation with the help of dispersive readout, achieving Rabi oscillation frequencies of 16.9 and 13.7 MHz at zero detuning. These results expand the spatial range of qubit coupling and readout via the cavity, enhancing the operational efficiency of cavity-quantum dot array coupled system.
Abstract Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of g 0/(2π) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.
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Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon QL = 2.14 × 104 with Qi ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.
Semiconductor-based spin qubits embedded into a superconducting microwave cavity constitute a fast-progressing and promising platform for realizing fast and fault-tolerant qubit control with long-range two-qubit coupling. The flopping-mode spin qubit consists of a single electron in a double quantum dot; it combines a charge qubit with a spin qubit. With its strong and tunable cavity coupling, the flopping-mode qubit is proven to be well suited for low-power qubit control and cavity-mediated long-range quantum gates. The singlet-triplet (ST) and exchange-only (EO) qubits are multielectron realizations that go without broadband control and are protected from some types of noise, but are challenging to couple to each other and to microwave cavities. We combine the flopping-mode concept with the ST and EO qubits and propose two new flopping-mode qubits that consist of three (four) quantum dots, occupied by two (three) electrons near the ( 1 , 0 , 1 ) ↔ ( 0 , 1 , 1 ) [ ( 1 , 0 , 1 , 1 ) ↔ ( 0 , 1 , 1 , 1 ) ] charge transition. The two-electron system augments the ST 0 spin qubit with a charge qubit that interacts transversally and longitudinally with a cavity. Both couplings are highly tunable, and the longitudinal coupling distinguishes the flopping-mode ST qubit from the regular flopping-mode qubit. The longitudinal coupling allows for nondissipative universal control similar to superconducting transmon qubits. The EO flopping-mode qubit comprises four dots occupied by three electrons and opens a new possibility to perform two-qubit gates for EO qubits that are challenging to perform directly with the exchange coupling. We use input-output theory to provide means of extracting the coupling strengths from cavity transmission data.
Abstract Triple quantum dots (TQDs) are promising semiconductor spin qubits because of their all-electrical control via fast, tunable exchange interactions and immunity to global magnetic fluctuations. These qubits can experience strong transverse interaction with photons in the resonant exchange (RX) regime, when exchange is simultaneously active on both qubit axes. However, most theoretical work has been based on phenomenological Fermi–Hubbard models, which may not fully capture the complexity of the qubit spin-charge states in this regime. Here we investigate exchange in Si/SiGe and GaAs TQDs using full configuration interaction (FCI) calculations which better describe practical device operation. We show that high exchange operation in general, and the RX regime in particular, can differ significantly from simple models, presenting new challenges and opportunities for spin–photon coupling. We highlight the impact of device electrostatics and effective mass on exchange and identify a new operating point (XRX) where strong spin–photon coupling is most likely to occur in Si/SiGe TQDs. Based on our numerical results, we analyze the feasibility of a remote entanglement cavity iSWAP protocol and discuss design pathways for improving fidelity. Our analysis provides insight into the requirements for TQD spin–photon transduction and demonstrates more generally the necessity of accurate modeling of exchange in spin qubits.
Coherent spin-photon coupling is believed to play a significant role in silicon-based quantum computation. The resonant exchange (RX) qubit, formed in a triple quantum dot, is a promising platform for spin-photon coupling and qubit scaling due to the large electric dipole moment and full electrical control without auxiliary micromagnets. However, there has been no experimental demonstration of silicon RX qubits and their strong coupling to microwave photons to date. In this work, we report the strong coupling between an RX qubit and a high-impedance resonator on a Si/SiGe heterostructure with coupling strength g_{s}/(2π)=65.8 MHz and decoherence rate γ_{s}/(2π)=21.4 MHz. Furthermore, the dependence of decoherence rate on detuning is measured and analyzed using a phenomenological model, indicating that the charge noise is the main source of decoherence. Our results demonstrate the viability of RX qubits in silicon, highlighting their crucial role of large-scale qubit integration for silicon quantum computation and opening new possibilities for quantum network.