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arXiv:2011.08759

Dispersive measurement of a semiconductor double quantum dot via 3D integration of a high-impedance TiN resonator

Nathan Holman, Danna Rosenberg, D. Yost, Jonilyn Yoder, Rabindra Nath Das, William D. Oliver, R. McDermott, M. A. Eriksson

Published Nov 17, 2020• 1 citation
arXivHTMLPDF

Abstract

Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing the qubits out using high-impedance superconducting resonators with a 2D grid unit cell area of $0.16~\text{mm}^2$ using 3D integration. To prove the viability of this approach, we demonstrate 3D integration of a high-impedance TiN resonator coupled to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36 limited by the resonator-dot capacitance. Characterization of the dot and resonator systems shows such integration can be done while maintaining low charge noise metrics for the quantum dots and with improved loaded quality factors for the superconducting resonator ($Q_L = 2.14 \times 10^4$), allowing for high-sensitivity charge detection and the potential for high fidelity 2-qubit gates. This work paves the way for 2D quantum dot qubit arrays with cavity mediated interactions.

DOI
10.48550/arxiv.2011.08759

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Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon QL = 2.14 × 104 with Qi ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.

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Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing the qubits out using high-impedance superconducting resonators with a 2D grid unit cell area of 0.16 mm20.16~\text{mm}^20.16 mm2 using 3D integration. To prove the viability of this approach, we demonstrate 3D integration of a high-impedance TiN resonator coupled to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36 limited by the resonator-dot capacitance. Characterization of the dot and resonator systems shows such integration can be done while maintaining low charge noise metrics for the quantum dots and with improved loaded quality factors for the superconducting resonator (QL=2.14×104Q_L = 2.14 \times 10^4QL​=2.14×104), allowing for high-sensitivity charge detection and the potential for high fidelity 2-qubit gates. This work paves the way for 2D quantum dot qubit arrays with cavity mediated interactions.
Abstract One major challenge to scaling quantum dot qubits is the dense wiring requirements, making it difficult to envision fabricating large 2D arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to ameliorate this issue by spacing out the qubits using superconducting resonators facilitated by 3D integration. To prove the viability of this approach, we use integration to couple an off-chip high-impedance TiN resonator to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36. Characterizing the individual systems shows 3D integration can be done while maintaining low-charge noise for the quantum dots and high-quality factors for the superconducting resonator (single photon QL = 2.14 × 104 with Qi ≈ 3 × 105), necessary for readout and high-fidelity two-qubit gates.
Abstract Scaling up spin qubits in silicon-based quantum dots is one of the pivotal challenges in achieving large-scale semiconductor quantum computation. To satisfy the connectivity requirements and reduce the lithographic complexity, utilizing the qubit array structure and the circuit quantum electrodynamics (cQED) architecture together is expected to be a feasible scaling scheme. A triple-quantum dot (TQD) coupled with a superconducting resonator is regarded as a basic cell to demonstrate this extension scheme. In this article, we investigate a system consisting of a silicon TQD and a high-impedance TiN coplanar waveguide (CPW) resonator. The TQD can couple to the resonator via the right double-quantum dot (RDQD), which reaches the strong coupling regime with a charge–photon coupling strength of g 0/(2π) = 175 MHz. Moreover, we illustrate the high tunability of the TQD through the characterization of stability diagrams, quadruple points (QPs), and the quantum cellular automata (QCA) process. Our results contribute to fostering the exploration of silicon-based qubit integration.
Hybrid circuit quantum electrodynamics (cQED) aims at coupling various quantum degrees of freedom, among which are spin and charge degrees of freedom in gate defined quantum dots, phonons or magnons... with quantized electromagnetic fields in superconducting microwave cavities to investigate fundamental physics questions or for quantum computation and simulation. However, low microwave losses, key for many hybrid cQED experiments, are challenging to achieve given the often exotic and/or complex material stacks (e.g. semiconducting material, ferromagnets, or piezoelectric materials) required to host the various quantum degrees of freedom. In this work, we present a 3D-integration process to overcome this challenge for semi-industrial silicon MOS spin qubits. The process is based on dense indium bump interconnects at a pitch of 10 μ\mathrmμμm and superconducting thin films of Niobium Nitride (NbN). First, we report on DC and RF interconnect properties that demonstrate a high galvanic interconnection yield and internal quality factors above 10510^{5}105 in the single photon regime for NbN resonators interrupted by a single indium bump interconnect. Eventually, we fabricated a 3D-integrated hybrid circuit quantum electrodynamics (cQED) device based on a semi-industrial MOS hole double quantum dot and a high impedance NbN resonator. For this device, we report a cavity internal quality factor above 10000 and demonstrate record sensitivity for gate-based dispersive readout of the charge degree of freedom with an SNR of 100 in 300 ns. Finally, we demonstrate strong spin-photon coupling of gs/2πg_{s}/2πgs​/2π = 75 MHz, which highlights the viability of 3D-integration for quantum dot based hybrid spin circuit quantum electrodynamics and opens to high-fidelity spin readout and microwave photon-based remote spin qubit entanglement.
Semiconductor quantum dots in which electrons or holes are isolated via electrostatic potentials generated by surface gates are promising building blocks for semiconductor-based quantum technology.Here, we investigate double-quantum-dot (DQD) charge qubits in GaAs capacitively coupled to highimpedance superconducting quantum interference device array and Josephson-junction array resonators.We tune the strength of the electric-dipole interaction between the qubit and the resonator in situ using surface gates.We characterize the qubit-resonator coupling strength, the qubit decoherence, and the detuning noise affecting the charge qubit for different electrostatic DQD configurations.We find all quantities to be systematically tunable over more than one order of magnitude, resulting in reproducible decoherence rates Γ 2 =2π < 5 MHz in the limit of high interdot capacitance.In the opposite limit, by reducing the interdot capacitance, we increase the DQD electric-dipole strength and, therefore, its coupling to the resonator.Employing a Josephson-junction array resonator with an impedance of approximately 4 kΩ and a resonance frequency of ω r =2π ∼ 5.6 GHz, we observe a coupling strength of g=2π ∼ 630 MHz, demonstrating the possibility to operate electrons hosted in a semiconductor DQD in the ultrastrong-coupling regime (USC).The presented results are essential for further increasing the coherence of quantum-dot-based qubits and investigating USC physics in semiconducting QDs.
Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed.This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation.Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here.The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.
Spin qubits in gate-defined semiconductor quantum dots are a promising platform for realising a scalable quantum computer. This platform encodes quantum information into the intrinsic angular momentum (spin) of individual electrons or holes. In particular, hole spins in quantum dots enable the possibility of all-electrical spin control due to their intrinsic spin-orbit coupling. One important criterion of a quantum computer is the ability to reliably read out the state of the qubit. This is done by mapping spin information to the charge degree of freedom, combined with a method for charge detection. Charge detection can be facilitated by coupling a resonator directly to the quantum dot gate or to a charge sensor and measuring the resonator's phase or amplitude response. In this thesis, we describe a set of experiments relating to the implementation of hole spin qubit readout with superconducting resonators. First, we study gate-based charge sensing in a Si fin field-effect transistor (finFET) device using a superconducting NbN nanowire resonator. We find that the resonator amplifies capacitive crosstalk when electrical control pulses are applied to gate electrodes in this device. This occurs whenever a spectral component of qubit control pulses overlaps with the resonance frequency, which we show may occur for both baseband and radio-frequency (RF) drive signals. We quantify this crosstalk in a transport-based method, and attribute its source to the capacitance between the bondpads of neighbouring gate electrodes. In a second experiment, we use an RF charge sensor with the same nanowire technology to read out hole spin qubits formed in the quantum well of a Ge/SiGe heterostructure. A screening layer approach is used to facilitate RF matching due to large RF dissipation found in the heterostructure. We implement a double-latched readout scheme in this system to reduce errors arising from both spin and charge decay during readout. The spin-to-charge conversion process and its dependence on magnetic field orientation is studied. Spin and charge decay processes arising after spin-to-charge conversion are mitigated by choosing an optimal working point for the field orientation, field amplitude and readout pulse times. By doing so, we achieve an average single-shot state-preparation-and-measurement fidelity of 97%, primarily bounded by imperfect state preparation and limited signal-to-noise ratio. Finally, we study coplanar waveguide resonators fabricated from NbN. We investigate the feasibility of integrating this type of resonator onto the same chip as the Si finFET quantum dots. We then develop a novel resonator readout technique by the interference of two microwave sidebands. We demonstrate the insensitivity of this technique to common-mode phase and amplitude noise both theoretically and experimentally. This technique is then used to study resonator noise arising from two-level system defects. These results highlight both the practical constraints and the potential for achieving high readout fidelities using resonator-based hole spin qubit readout. This work establishes a blueprint for mitigating resonator-induced crosstalk and enabling high-fidelity readout in lossy materials by incorporating a screening layer.