A new method is presented for measuring the intermediate frequency (IF) output impedance (ZIF) of a superconducting tunnel junction (SIS) mixer at cryogenic temperatures. As an example, the impedance ZIF of an ALMA Band 6 (211-275 GHz) SIS mixer chip was measured at the IF bonding pad. The setup uses a commercial Vector Network Analyzer (VNA) with sensitivity enhancements to increase the dynamic range and allow low-power-one-port reflection coefficient (ΓIF) measurements. A coupler inside the VNA is bypassed and replaced with an equivalent cold coupler inside the cryostat. The bias to the mixer is provided through the IF isolator. A cryogenic low noise amplifier (CLNA) in the return path to the VNA increases its dynamic range. One-port calibration standards (short, open, 50 Ω) are used, and the impedance is de-embedded from the calibration reference plane to the IF bonding pad of the mixer chip using the proprietary Automatic Fixture Removal (AFR) capability of the Keysight Technologies VNA. This approach allows direct measurement of the amplitude and phase of ΓIF and hence ZIF, from 2 to 16 GHz with very low power levels at the device under test. The measured results are compared with the predictions made from combining Tucker's quantum mixer theory with electromagnetic model of the mixer.
A new method is presented for measuring the intermediate frequency (IF) output impedance (ZIF) of a superconducting tunnel junction (SIS) mixer at cryogenic temperatures. As an example, the impedance ZIF of an ALMA Band 6 (211-275 GHz) SIS mixer chip was measured at the IF bonding pad. The setup uses a commercial Vector Network Analyzer (VNA) with sensitivity enhancements to increase the dynamic range and allow low-power-one-port reflection coefficient (ΓIF) measurements. A coupler inside the VNA is bypassed and replaced with an equivalent cold coupler inside the cryostat. The bias to the mixer is provided through the IF isolator. A cryogenic low noise amplifier (CLNA) in the return path to the VNA increases its dynamic range. One-port calibration standards (short, open, 50 Ω) are used, and the impedance is de-embedded from the calibration reference plane to the IF bonding pad of the mixer chip using the proprietary Automatic Fixture Removal (AFR) capability of the Keysight Technologies VNA. This approach allows direct measurement of the amplitude and phase of ΓIF and hence ZIF, from 2 to 16 GHz with very low power levels at the device under test. The measured results are compared with the predictions made from combining Tucker's quantum mixer theory with electromagnetic model of the mixer.
In this paper, we describe a measurement setup to characterize the intermediate frequency (IF) impedance of cryogenically cooled superconductor-insulator-superconductor (SIS) mixers. A setup based on a commercial vector network analyzer (VNA), a circulator and a low noise amplifier (LNA) has allowed to increase the dynamic of the VNA and to perform accurate one-port measurements across a high dynamic range of the SIS mixers IF band. The mixers were biased in three different regions of their unpumped IV curve to obtain three known impedances which are close to the classical calibration SOLT standards (Short, Open, Load, Thru): the reference plane was located at the SIS junction itself and the calibration procedure allowed to calibrate out all IF circuitry of the measurement setup, including the on-chip SIS mixer intrinsic capacitance and inductance without requiring to thermally cycle and open the cryostat to locate and measure the different calibration standards. Thus, the devised method provides a simple and direct measurement of the SIS mixers IF impedance which can be used for quick, accurate and highly repeatable IF characterization of any type of millimeter and sub-millimeter wave SIS mixers. The measurement method is described and the experimental results of the IF output impedances of 3 mm band DSB and SSB mixers with 4 GHz wide IFs (across 4-8 GHz) are presented and compared with simulated predictions obtained from combining Tucker's SIS mixer theory and accurate electromagnetic modeling of the mixer structure.
This paper reports the simulation, performance, and detailed characterization of a low-noise heterodyne module with very wide intermediate frequency (IF) bandwidth in the 385-500-GHz radio frequency (RF) range. The module integrates a superconductor-insulator-superconductor (SIS) mixer with a 3- 21-GHz cryogenic low-noise preamplifier (CLNA). The utilization of high current density SIS junctions offers wide RF bandwidth and facilitates better matching between SIS junctions and the CLNA. Based on an equivalent circuit of the SIS mixer chip, we calculate the IF output impedance and simulate how different matching conditions affect the performance of the CLNA. Simulations predict that low-noise module performance can be obtained over a 3-18GHz IF range, limited mainly by parasitic elements in theSIS mixer chip. The measurement results of the heterodyne module demonstrate flat gain and a typical noise temperature of 70-80 K over the 3-18-GHz IF range, at local oscillator frequencies of 400-480 GHz. Mixer chip output impedance and CLNA input impedance have been directly measured by recording S-parameters at cryogenic temperatures. The results enabled us to quantify the contribution of various parasitic elements in the mixer IF circuitry. Calculations based on our model are in good agreement with measurements.
Abstract The wide intermediate frequency (IF) bandwidth is a core performance metric for terahertz heterodyne receivers, and a wide-IF superconductor–insulator–superconductor (SIS) mixer is key to achieving this. This paper presents the simulation-based design, optimization, and performance analysis of a 345 GHz superconducting SIS mixer developed for wide-IF applications. The mixer employs a parallel-connected twin-junction tuning structure and integrates a dedicated IF impedance matching circuit, achieving wideband impedance matching between the mixer output port and low-noise amplifier. The design is based on two tunnel junction technologies, AlO x and AlN, with critical current densities of 1 kA·cm −2 and 25 kA·cm −2 , respectively. We systematically studied the effects of different junction materials and junction areas on the RF and IF bandwidth performance of the SIS mixer. It is found that for AlN-barrier junctions with diameters of 0.6 μ m and 0.8 μ m, the receiver’s IF noise temperature slowly decreased as the IF frequency increased at a high local oscillator frequency. Furthermore, we incorporated the calculated IF output port impedance into the mixer model for correction and introduced an integrated IF circuit approach, overcoming the original IF bandwidth limitation. Simulations show that the newly designed mixer achieves the stringent sensitivity and bandwidth requirements across the 320–370 GHz range, delivering an IF bandwidth of 4–22 GHz and a receiver noise temperature of 39–73 K. Notably, the −3 dB IF bandwidth is improved by more than 1.5 times compared to conventional AlO x -based designs. These findings provide new design guidelines and quantitative criteria for next-generation wide-IF receivers and other high-frequency applications requiring a wide IF bandwidth.
The level of signal reflection at an intermediate frequency from an SIS-mixer was calculated and experimentally measured. The measurement was performed for the mixer in operation, namely, it was biased by voltage and the signal of the local oscillator was applied. It is shown that the power reflection coefficient can vary from -20 to -3 dB depending on the operating point. An experimental method for determining the impedance of the supply line of the SIS-mixer is proposed and tested. Keywords: superconductor--insulator--superconductor tunnel junction, intermediate frequency, submillimeter SIS-mixer.
We are developing a new instrument, the RF Josephson arbitrary waveform synthesizer (RF-JAWS), for communications metrology and quantum information applications. An important aspect of the RF-JAWS design is the accurate and traceable characterization of its superconducting devices. In this article, we present a procedure for characterizing microwave superconducting devices in a cryogenic RF probe station via a vector network analyzer (VNA) calibrated with a custom cryogenic calibration kit colocated with the superconducting device under test (DUT) in the cryogenic environment. By de-embedding lossy and dispersive RF interconnects linking the superconducting DUT to the measurement apparatus at room temperature, we characterize the DUT exactly at the cryogenic on-wafer reference plane. More importantly, we operate our VNA with an external modulated source and our procedure features metrology-grade multiline thru-reflect-line calibration and absolute power and phase corrections, as opposed to the more common relative scattering-parameter correction. In addition, we apply anX-parameter model to account for impedance mismatch in cryogenic Josephson microwave sources. Our techniques are also suitable for cryogenic characterization of microwave superconducting devices for solid-state quantum computers and could help to optimize the quantum-classical interfaces in these systems.
Superconductor-Insulator-Superconductor (SIS) tunnel junction mixers are now commonly used in as- tronomical receivers at (sub)millimeter wavelengths because of their superb sensitivity, high dynamic range and stability of operation. Niobium SIS mixers operating at frequencies well below the super- conducting gap (∼680 GHz) have already achieved quantum limited sensitivity. Therefore to further enhance the receiver sensitivity, increasing the Intermediate Frequency (IF) bandwidth of SIS mixers has became crucial. This thesis focuses on the theoretical modeling, design and experimental verifi- cation of Nb SIS mixers operating around 230 GHz with a wide IF bandwidth of 1–15 GHz. These mixers were designed for a single baseline heterodyne interferometer (GUBBINS), which is being built to observe the Sunyaev-Zel’dovich effect in the Cosmic Microwave Background. The combination of wide IF bandwidth SIS mixers and complex analogue correlators will allow GUBBINS to feature high surface brightness sensitivity, that helps to distinguish the weak SZ effect from the background noise. The SIS mixer detector system was assembled inside the GUBBINS cryostat together with the IF electronics and RF/LO optical systems. Low noise temperatures of around 71 K were then measured in the GUBBINS system. The Nb SIS mixer we have developed uses a unilateral finline and fully integrated planar circuits deposited on a silicon substrate, to couple the electromagnetic radiation from the waveguide into the SIS junction. The finline mixer allows a broad-band RF coupling, an easy integration of the on-chip planar circuits and an easy-to-fabricate mixer block. To achieve a wide IF bandwidth, the output impedance of the SIS mixer was well matched to the input impedance of the amplifier by a multi-stage microstrip circuit. Additionally, the planar circuit of the SIS mixer was also designed to have a small lumped inductance and capacitance. The SIS mixer chip was extensively simulated by rigorous electromagnetic software (HFSS) and the S-parameter was exported to a quantum mixing package SuperMix to produce a full-wave model of the mixer. Experimental testing yielded a best noise temperature of 50 K with an average noise temperature of 75 K over an RF bandwidth of 160 GHz– 260 GHz. We have performed thorough experimental and computational investigation of the IF system in particular the constraints on the bandwidth caused by the lumped element capacitance of the mixer chip and the matching of the output impedance of the mixer to the IF amplifier. Our conclusion is that a bandwidth of 1–15 GHz could be achieved using our mixer design, subject to the performance of the amplifier. Finally, a variable temperature load system was successfully developed and tested inside the cryostat, to avoid the losses from the room-temperature optics. We have showed that the noise temperature of the SIS detector could be reduced by as much as 15 K by testing the mixer using a variable temperature load inside the cryostat.