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Quantum Emission and Strain Determination in Boron-Implanted Single-Crystal Diamond Using Irradiation Induced Nitrogen-Vacancies

Vivek K. Shukla, Ayan Majumder, Brajesh Singh Yadav, Sandeep Dalal, Nanhey Singh, Kasturi Saha, Padmnabh Rai

Published Jan 1, 2025• 0 citations
Publisher
DOI
10.2139/ssrn.5111522

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We report a systematic investigation on the spectral splitting of negatively charged, nitrogen–vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure–high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols.
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