We report a systematic investigation on the spectral splitting of negatively charged, nitrogen–vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure–high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols.
We report a systematic investigation on the spectral splitting of negatively charged, nitrogen–vacancy (NV − ) photoluminescent emission in single-crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a high-pressure–high-temperature diamond, clearly distinguishable spectral components in the NV − emission develop over a range of ∼4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV − centers for ensemble quantum information protocols.
Precise control over the spatial distribution and charge state of nitrogen-vacancy (NV) centers in diamond is a key requirement for further advancing this platform in quantum sensing and photonic applications. Here, we investigate nitrogen ion implantation as a scalable method to engineer NV centers in bulk single-crystalline (SC) and a 5 μ m -thick polycrystalline (PC) diamond membrane. Nitrogen-doped regions (1–80 ppm) were fabricated using a 0.7 MeV ion beam and high-temperature annealing, with NV center formation verified by confocal fluorescence imaging and spectral analysis. In SC bulk diamond, we estimate the NV concentration from spectral analysis and model the fluorescence response as a function of implantation dose, capturing both the initial increase at low concentrations and a saturation behavior at higher doses due to quenching mechanisms. In contrast, PC diamond membranes show a weaker dependence at low implantation fluences, consistent with pre-existing nitrogen impurities, thus making a statistical model significantly more complex. The activation yield is found to be of order of 1%, which is lower than in N-rich diamond samples, as implanted N is predominantly interstitial. Photoluminescence spectroscopy indicates that NV 0 is the dominant charge state in both materials, with a laser-power-dependent redistribution between neutral and negative charge states. Optically detected magnetic resonance (ODMR) measurements in SC bulk diamond resolve the hyperfine structure and allow extraction of the dephasing time ( T 2 ∗ ), while in PC diamond membranes, where NV centers tend do form near the grain boundaries, the ODMR signals are observed but spectral resolution is currently limited by impurities, grain-dependent NV orientations, and photoluminescence background.
Creating dense and shallow nitrogen-vacancy (NV) ensembles with good spin properties is a prerequisite for developing diamond-based quantum sensors exhibiting better performance. Ion implantation is a key enabling tool for precisely controlling spatial localization and density of NV color centers in diamond. However, it suffers from a low creation yield, while higher ion fluences significantly damage the crystal lattice. In this work, we realize N2+ ion implantation in the 30–40 keV range at high temperatures. At 800 °C, NV's ensemble photoluminescence emission is three to four times higher than room temperature implanted films, while narrow electron spin resonance linewidths of 1.5 MHz, comparable to well-established implantation techniques, are obtained. In addition, we found that ion fluences above 2 × 1014 ions/cm2 can be used without graphitization of the diamond film, in contrast to room temperature implantation. This study opens promising perspectives in optimizing diamond films with implanted NV ensembles that could be integrated into quantum sensing devices.
The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV−/NV0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.
Diamond has been extensively examined as an appealing material for use in quantum optics and quantum information processing owing to the existence of various classes of optically active defects, referred to as “color centers,” which can be engineered into its crystal structure. Among these defects, the negatively charged nitrogen-vacancy center (NV−) stands out as the most prominent type. Despite the progress made, the number of emitters characterized by reproducible fabrication processes within the desired spectral range at room temperature, with limited or no damage to the parent diamond lattice, remains restricted. Herein, we are proposing for the first time the creation of the FV− center in diamond via low-energy implantation, which is particularly interesting as it possesses characteristic light absorption and magnetic properties similar to NV− centers. The low-energy ion-implanted FV centers in diamond show more desirable optical emission properties at room temperature (RT). Additionally, as per DFT calculations, the flat bands near the Fermi energy indicate dominant electron–electron interactions, an important prerequisite for observing emergent behavior as seen in systems such as twisted bi-layer graphene. Consequently, as-developed new luminescent defects such as Fluorine Vacancy Centers (FV) with desirable spectral and quantum emission properties would be a significant breakthrough in diamond-based quantum materials.
Understanding particle-induced damage tracks in solid-state materials underpins emerging applications in rare-event detection and quantum defect engineering. Resolving these tracks requires multi-scale readout, from event localization at the millimeter scale to track-morphology reconstruction at the nanoscale. Nitrogen-vacancy (NV) centers in diamond provide such a platform, combining optical localization with quantum sensing of track morphology. Here, we implant sub-MeV carbon ions into nitrogen-rich diamond and detect individual recoil events via spatially localized NV formation. We develop a simulation framework that explains the observed NV yield and predicts that directional information is retained in the NV distribution after annealing. Machine learning further recovers much of the information lost to defect diffusion and limited NV yield, improving head-tail classification to a level comparable to pre-annealed vacancy tracks. Measurements of NV spin coherence indicate compatibility with nanoscale track reconstruction via NV strain mapping and magnetic gradient-based techniques. These results identify promising pathways toward NV-diamond directional detectors for rare events, while the track-modeling framework has broader implications for paleodetection and quantum material synthesis.
Defects in diamond have evolved as unique object for their potential application for Optical imaging and Nano-photonics. High pressure high temperature (HPHT) grown type-Ib diamond particles were milled down to the size of ~ 80 nm and purified to remove iron & graphitic carbon impurities and irradiated with 35 KeV He+ ions to create vacancies in the diamond lattice. Vacancies diffuse close to substitutional nitrogen impurities of nano-diamond particles upon thermal treatment. Characteristic sharp emission of NV centers were observed at 575.5 nm and 637.9 nm corresponding to NV° and NV− charged states in addition to a broad emission in the range 550-750 nm. Structural and photo-physical behavior of these fluorescent diamonds was found to depend on the method of purification adopted. Samples purified through acid reflux were found suitable for bio-imaging applications while, sample purified through air oxidation shows properties desirable for Nano-photonic applications. Photon-correlation measurements of emission from individual diamond nanoparticles using Hanbury Brown and Twiss interferometer (HBT) shows anti-bunching curve with g2(t)= 0 confirming their suitability as single photon source. Such sources of indistinguishable photons are highly desirable for quantum computation and quantum optics applications.