Nitrogen-vacancy (N- $V$ ) centers in diamond are widely used in quantum information science, but existing methods to fabricate N- $V$ centers rely on damaging the diamond lattice, and usually lead to poor optical coherence. The authors propose a nondestructive method, where high-purity diamonds are annealed under high pressure and high temperature, to generate N- $V$ centers with excellent optical, spin, and charge properties. These results provide new insights into the diffusion dynamics of defects under extreme conditions, and indicate that even the ultrapure diamond contains enough nitrogen and vacancies to form N- $V$ centers.Nitrogen-vacancy (N-$V$) centers in diamond are widely used in quantum information science, but existing methods to fabricate N-$V$ centers rely on damaging the diamond lattice, and usually lead to poor optical coherence. The authors propose a nondestructive method, where high-purity diamonds are annealed under high pressure and high temperature, to generate N-$V$ centers with excellent optical, spin, and charge properties. These results provide new insights into the diffusion dynamics of defects under extreme conditions, and indicate that even the ultrapure diamond contains enough nitrogen and vacancies to form N-$V$ centers.

arXiv:2409.17442Physical Review AppliedMay 30, 20254 citations

Calculation of the optical properties of the nitrogen-vacancy center in diamond

Denis Antonov, Jörg Wrachtrup, Gabriel Bester

Bulletin of the American Physical SocietyMar 21, 20130 citations

Impact of surface and laser-induced noise on the spectral stability of implanted nitrogen-vacancy centers in diamond

Srivatsa Chakravarthi, Christian Pederson, Zeeshawn Kazi +2 more

Scalable realizations of quantum network technologies utilizing the nitrogen-vacancy (NV) center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}\mathrm{N}$ ion implantation and high-temperature vacuum annealing. The origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near-lifetime-limited optical linewidths $(<60 \mathrm{MHz})$ are observed for the majority of the normal-implant (${7}^{\ensuremath{\circ}}$, $\ensuremath{\approx}100$ nm deep) $^{15}\mathrm{NV}$ centers. Long-term stability of the ${\mathrm{NV}}^{\ensuremath{-}}$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion energy, and thus lattice damage profile. In contrast to the normal-implant condition, NVs from an oblique implant (${85}^{\ensuremath{\circ}}$, $\ensuremath{\approx}20$ nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.Scalable realizations of quantum network technologies utilizing the nitrogen-vacancy (NV) center in diamond require creation of optically coherent NV centers in close proximity to a surface for coupling to optical structures. We create single NV centers by $^{15}\mathrm{N}$ ion implantation and high-temperature vacuum annealing. The origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near-lifetime-limited optical linewidths $(<60 \mathrm{MHz})$ are observed for the majority of the normal-implant (${7}^{\ensuremath{\circ}}$, $\ensuremath{\approx}100$ nm deep) $^{15}\mathrm{NV}$ centers. Long-term stability of the ${\mathrm{NV}}^{\ensuremath{-}}$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion energy, and thus lattice damage profile. In contrast to the normal-implant condition, NVs from an oblique implant (${85}^{\ensuremath{\circ}}$, $\ensuremath{\approx}20$ nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.

arXiv:2105.09483Physical review. B./Physical review. BAug 24, 202130 citations

Optics with Nitrogen Vacancy Centers in Diamond

Mikhail D. Lukin

Bulletin of the American Physical SocietyJun 15, 20110 citations

High-quality nanostructured diamond membranes for nanoscale quantum sensing

Alexander Pakpour Tabrizi, Artur Lozovoi, Sean Karg +4 more

Deploying nitrogen vacancy (NV) centers in diamond as nanoscale quantum sensors for condensed matter and materials physics requires placing the NV centers close to the sensing target. One solution is to fabricate diamond nanostructures and integrate them with materials and devices. However, diamond etching and ion milling can introduce subsurface damage and surface defects that degrade the charge stability and spin coherence of NV centers near the surface. Here we report a procedure for fabricating low-damage nanostructured diamond membranes, and we show that this fabrication scheme preserves the optical and spin properties of state-of-the-art shallow NV center quantum sensors, within nanometers of the diamond surface, while providing significant photonic enhancement. Furthermore, we demonstrate a pick-and-place transfer method, which enables integration with diverse sensing targets.Deploying nitrogen vacancy (NV) centers in diamond as nanoscale quantum sensors for condensed matter and materials physics requires placing the NV centers close to the sensing target. One solution is to fabricate diamond nanostructures and integrate them with materials and devices. However, diamond etching and ion milling can introduce subsurface damage and surface defects that degrade the charge stability and spin coherence of NV centers near the surface. Here we report a procedure for fabricating low-damage nanostructured diamond membranes, and we show that this fabrication scheme preserves the optical and spin properties of state-of-the-art shallow NV center quantum sensors, within nanometers of the diamond surface, while providing significant photonic enhancement. Furthermore, we demonstrate a pick-and-place transfer method, which enables integration with diverse sensing targets.

cond-mat.mes-hallCross-listedarXiv:2511.08632Nov 11, 20250 citations

Optical properties of nitrogen-vacancy centers created near a diamond surface

 Fu, Santori, Barclay +1 more

Conference on Lasers and Electro-OpticsJan 1, 20100 citations

Nitrogen-vacancy (N-

V

) centers in diamond are widely used in quantum information science, but existing methods to fabricate N-

V

centers rely on damaging the diamond lattice, and usually lead to poor optical coherence. The authors propose a nondestructive method, where high-purity diamonds are annealed under high pressure and high temperature, to generate N-

V

centers with excellent optical, spin, and charge properties. These results provide new insights into the diffusion dynamics of defects under extreme conditions, and indicate that even the ultrapure diamond contains enough nitrogen and vacancies to form N-

V

centers.

^{15}\mathrm{N}

ion implantation and high-temperature vacuum annealing. The origin of the NV centers is established by optically detected magnetic resonance spectroscopy for nitrogen isotope identification. Near-lifetime-limited optical linewidths

(<60 \mathrm{MHz})

are observed for the majority of the normal-implant (${7}^{\ensuremath{\circ}}$, $\ensuremath{\approx}100$ nm deep)

^{15}\mathrm{NV}

centers. Long-term stability of the ${\mathrm{NV}}^{\ensuremath{-}}$ charge state and emission frequency is demonstrated. The effect of NV-surface interaction is investigated by varying the implantation angle for a fixed ion energy, and thus lattice damage profile. In contrast to the normal-implant condition, NVs from an oblique implant (${85}^{\ensuremath{\circ}}$, $\ensuremath{\approx}20$ nm deep) exhibit substantially reduced optical coherence. Our results imply that the surface is a larger source of perturbation than implantation damage for shallow implanted NVs. This work supports the viability of ion implantation for formation of optically stable NV centers. However, careful surface preparation will be necessary for scalable defect engineering.